High‐Performance Zinc Tin Oxide TFTs with Active Layers Deposited by Atomic Layer Deposition

Allemang, Christopher R.; Cho, Tae H.; Trejo, Orlando; Ravan, Shantam; Rodríguez, Robin E.; Dasgupta, Neil P.; Peterson, Rebecca L.

doi:10.1002/aelm.202000195

Title: High‐Performance Zinc Tin Oxide TFTs with Active Layers Deposited by Atomic Layer Deposition

Journal Article · Thu Jun 11 00:00:00 EDT 2020 · Advanced Electronic Materials

DOI:https://doi.org/10.1002/aelm.202000195· OSTI ID:1633122

^[1]; Cho, Tae H. ^[2]; Trejo, Orlando ^[2]; Ravan, Shantam ^[1]; Rodríguez, Robin E. ^[2]; Dasgupta, Neil P. ^[2]; Peterson, Rebecca L. ^[1]

Electrical Engineering and Computer Science Department University of Michigan Ann Arbor MI 48109‐2122 USA
Department of Mechanical Engineering University of Michigan Ann Arbor MI 48109‐2125 USA

Abstract New deposition techniques for amorphous oxide semiconductors compatible with silicon back end of line manufacturing are needed for 3D monolithic integration of thin‐film electronics. Here, three atomic layer deposition (ALD) processes are compared for the fabrication of amorphous zinc tin oxide (ZTO) channels in bottom‐gate, top‐contact n‐channel transistors. As‐deposited ZTO films, made by ALD at 150–200 °C, exhibit semiconducting, enhancement‐mode behavior with electron mobility as high as 13 cm ² V ⁻¹ s ⁻¹ , due to a low density of oxygen‐related defects. ZTO deposited at 200 °C using a hybrid thermal‐plasma ALD process with an optimal tin composition of 21%, post‐annealed at 400 °C, shows excellent performance with a record high mobility of 22.1 cm ² V ^–1 s ^–1 and a subthreshold slope of 0.29 V dec ^–1 . Increasing the deposition temperature and performing post‐deposition anneals at 300–500 °C lead to an increased density of the X‐ray amorphous ZTO film, improving its electrical properties. By optimizing the ZTO active layer thickness and using a high‐ k gate insulator (ALD Al ₂ O ₃ ), the transistor switching voltage is lowered, enabling electrical compatibility with silicon integrated circuits. This work opens the possibility of monolithic integration of ALD ZTO‐based thin‐film electronics with silicon integrated circuits or onto large‐area flexible substrates.

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Sponsoring Organization:: USDOE

OSTI ID:: 1633122

Journal Information:: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Vol. 6 Journal Issue: 7; ISSN 2199-160X

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 27 works

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