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Microscopic model for the stacking-fault potential and the exciton wave function in GaAs

Journal Article · · Physical Review B
 [1];  [1];  [2];  [2];  [3];  [3];  [3];  [4];  [4];  [2]
  1. Russian Academy of Sciences (RAS), St. Petersburg (Russian Federation). Ioffe Physical-Technical Institute
  2. Univ. of Washington, Seattle, WA (United States)
  3. Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
  4. Ruhr Univ., Bochum (Germany)
+ Show Author Affiliations
Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trapping potential for carriers and excitons. Here we utilize state-of-the-art structural imaging cou- pled with density functional and effective-mass theory to build a microscopic model of the stacking- fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault in GaAs. The model is used to further provide insight into the properties of excitons bound to the double-well potential formed by stacking fault pairs. This microscopic exciton model can be used as an input into models which include exciton-exciton interactions to determine the excitonic phases accessible in this system.
Research Organization:
Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
AC05-76RL01830
OSTI ID:
1631317
Alternate ID(s):
OSTI ID: 1605629
Report Number(s):
PNNL-SA--148814
Journal Information:
Physical Review B, Journal Name: Physical Review B Journal Issue: 12 Vol. 101; ISSN 2469-9950; ISSN PRBMDO
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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