Electron temperature dependence on electrode layer characteristics in low-pressure RF discharge
Conference
·
OSTI ID:163079
- Kharkov Univ. (Ukraine)
Low-pressure RF discharge is often applied to etch semiconductor materials, to deposit diamond-like films, to pump gas lasers etc. Electron temperature T{sub e} in the quasineutral plasma is one of the important characteristics of RF discharge. This paper reports on the relation found between T{sub e} and electrode layer parameters for collisional and collisionless cases.
- OSTI ID:
- 163079
- Report Number(s):
- CONF-950612--; ISBN 0-7803-2669-5
- Country of Publication:
- United States
- Language:
- English
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