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Title: Intrinsic Photoconductivity of few-layered ZrS2 Phototransistors via Multiterminal Measurements

Journal Article · · Semiconductor Science and Information Devices
 [1];  [2];  [3];  [1];  [1];  [4];  [4];  [4];  [4];  [2];  [1];  [5]
  1. Jackson State Univ., Jackson, MS (United States)
  2. Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
  3. Kunming Univ. of Science and Technology (China)
  4. Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
  5. Jackson State Univ., Jackson, MS (United States); Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab. (MagLab)
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We report intrinsic photoconductivity studies on one of the least examined layered compounds, ZrS2.Few-atomic layer ZrS2 field-effect transistors were fabricated on the Si/SiO2 substrate and photoconductivity measurements were performed using both two- and four-terminal configurations under the illumination of 532 nm laser source. We measured photocurrent as a function of the incident optical power at several source-drain (bias) voltages. We observe a significantly large photoconductivity when measured in the multiterminal (four-terminal) configuration compared to that in the two-terminal configuration. For an incident optical power of 90 nW, the estimated photosensitivity and the external quantum efficiency (EQE) measured in two-terminal configuration are 0.5 A/W and 120%, respectively, under a bias voltage of 650 mV. Under the same conditions, the four-terminal measurements result in much higher values for both the photoresponsivity (R) and EQE to 6 A/W and 1400%, respectively. This significant improvement in photoresponsivity and EQE   in the four-terminal configuration may have been influenced by the reduction of contact resistance at the metal-semiconductor interface, which greatly impacts the carrier mobility of low conducting materials. This suggests that photoconductivity measurements performed through the two-terminal configuration in previous studies on ZrS2 and other 2D materials have severely underestimated the true intrinsic properties of transition metal dichalcogenides and their remarkable potential for optoelectronic applications.

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Organization:
National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1630310
Journal Information:
Semiconductor Science and Information Devices, Vol. 1, Issue 2; ISSN 2661-3212
Publisher:
Bilingual Publishing Co.Copyright Statement
Country of Publication:
United States
Language:
English

Figures / Tables (5)

Figure 1(p. 3)figure Figure 1
Figure 2(p. 4)figure Figure 2
Figure 3(p. 5)figure Figure 3
Figure 4(p. 6)figure Figure 4
Figure 5(p. 7)figure Figure 5

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36 MATERIALS SCIENCE
Field-effect transistors
Phototransistor
Quantum efficiency
Responsivity
Zirconium sulphide