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Roles for Countercharge in the Voltage Sensor Domain of Ion Channels

Journal Article · · Frontiers in Pharmacology
 [1];  [2]
  1. Idaho State Univ., Pocatello, ID (United States). Dept. of Biological Sciences; DOE/OSTI
  2. Idaho State Univ., Pocatello, ID (United States). Dept. of Biological Sciences; Oregon Health and Sciences University School of Medicine, Portland, OR (United States)
Voltage-gated ion channels share a common structure typified by peripheral, voltage sensor domains. Their S4 segments respond to alteration in membrane potential with translocation coupled to ion permeation through a central pore domain. The mechanisms of gating in these channels have been intensely studied using pioneering methods such as measurement of charge displacement across a membrane, sequencing of genes coding for voltage-gated ion channels, and the development of all-atom molecular dynamics simulations using structural information from prokaryotic and eukaryotic channel proteins. One aspect of this work has been the description of the role of conserved negative countercharges in S1, S2, and S3 transmembrane segments to promote sequential salt-bridge formation with positively charged residues in S4 segments. These interactions facilitate S4 translocation through the lipid bilayer. In this review, we describe functional and computational work investigating the role of these countercharges in S4 translocation, voltage sensor domain hydration, and in diseases resulting from countercharge mutations.
Research Organization:
Idaho National Laboratory (INL), Idaho Falls, ID (United States)
Sponsoring Organization:
Idaho IDeA Network of Biomedical Research Excellence (INBRE); National Institute of General Medical Sciences (NIGMS); National Institutes of Health (NIH); USDOE National Nuclear Security Administration (NNSA); USDOE Office of Nuclear Energy (NE)
Grant/Contract Number:
AC07-05ID14517
OSTI ID:
1628212
Journal Information:
Frontiers in Pharmacology, Journal Name: Frontiers in Pharmacology Vol. 11; ISSN 1663-9812
Publisher:
Frontiers Research FoundationCopyright Statement
Country of Publication:
United States
Language:
English

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