Magnetism in semiconducting molybdenum dichalcogenides

Guguchia, Z.; Kerelsky, A.; Edelberg, D.; Banerjee, S.; von Rohr, F.; Scullion, D.; Augustin, M.; Scully, M.; Rhodes, D. A.; Shermadini, Z.; Luetkens, H.; Shengelaya, A.; Baines, C.; Morenzoni, E.; Amato, A.; Hone, J. C.; Khasanov, R.; Billinge, S. J.  L.; Santos, E.; Pasupathy, A. N.; Uemura, Y. J.

doi:10.1126/sciadv.aat3672

Title: Magnetism in semiconducting molybdenum dichalcogenides

Journal Article · Fri Dec 21 00:00:00 EST 2018 · Science Advances

DOI:https://doi.org/10.1126/sciadv.aat3672· OSTI ID:1625993

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^[7]; Santos, E. ^[4];

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Columbia Univ., New York, NY (United States); Paul Scherrer Inst. (PSI), Villigen (Switzerland)
Columbia Univ., New York, NY (United States)
Univ. of Zurich (Switzerland)
Queen's Univ., Belfast, Northern Ireland (United Kingdom)
Paul Scherrer Inst. (PSI), Villigen (Switzerland)
Tbilisi State Univ. (Georgia)
Columbia Univ., New York, NY (United States); Brookhaven National Lab. (BNL), Upton, NY (United States)

Transition metal dichalcogenides (TMDs) are interesting for understanding the fundamental physics of two-dimensional (2D) materials as well as for applications to many emerging technologies, including spin electronics. Here, we report the discovery of long-range magnetic order belowT_M = 40 and 100 K in bulk semiconducting TMDs 2H-MoTe₂and 2H-MoSe₂, respectively, by means of muon spin rotation (μSR), scanning tunneling microscopy (STM), and density functional theory (DFT) calculations. The μSR measurements show the presence of large and homogeneous internal magnetic fields at low temperatures in both compounds indicative of long-range magnetic order. DFT calculations show that this magnetism is promoted by the presence of defects in the crystal. The STM measurements show that the vast majority of defects in these materials are metal vacancies and chalcogen-metal antisites, which are randomly distributed in the lattice at the subpercent level. DFT indicates that the antisite defects are magnetic with a magnetic moment in the range of 0.9 to 2.8 μ_B. Further, we find that the magnetic order stabilized in 2H-MoTe₂and 2H-MoSe₂is highly sensitive to hydrostatic pressure. These observations establish 2H-MoTe₂and 2H-MoSe₂as a new class of magnetic semiconductors and open a path to studying the interplay of 2D physics and magnetism in these interesting semiconductors.

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Research Organization:: Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Swiss National Science Foundation (SNSF); National Science Foundation (NSF); US Department of the Navy, Office of Naval Research (ONR); US Air Force Office of Scientific Research (AFOSR); SCOPES; Engineering and Physical Sciences Resource Council (EPSRC); Queen’s Univ. Belfast; Northern Ireland Department for the Economy

Grant/Contract Number:: SC0012704; SC00112704; P2ZHP2-161980; P300P2-177832; PZ00P2-174015; DMR-1610110; DMR-1436095; DMR-1610633; DMR-1420634; TG-DMR120049; TG-DMR150017; N00014-14-1-0501; FA9550-11-1-0010; IZ74Z0-160484; EP/K013564/1; EP/P020194/1; M8407MPH; A5047TSL; USI-097

OSTI ID:: 1625993

Journal Information:: Science Advances, Vol. 4, Issue 12; ISSN 2375-2548

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 71 works

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DFT study of itinerant ferromagnetism in $p$ -doped monolayers of ${MoS}_{2}$ Gao, Yuqiang; Ganguli, Nirmal; Kelly, Paul J. Physical Review B, Vol. 100, Issue 23 https://doi.org/10.1103/physrevb.100.235440	journal	December 2019
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