Tuning the vertical location of helical surface states in topological insulator heterostructures via dual-proximity effects

Wu, Guangfen; Chen, Hua; Sun, Yan; Li, Xiaoguang; Cui, Ping; Franchini, Cesare; Wang, Jinlan; Chen, Xing-Qiu; Zhang, Zhenyu

doi:10.1038/srep01233

Tuning the vertical location of helical surface states in topological insulator heterostructures via dual-proximity effects

Journal Article · Wed Feb 06 00:00:00 EST 2013 · Scientific Reports

DOI:https://doi.org/10.1038/srep01233· OSTI ID:1624588

Wu, Guangfen ^[1]; Chen, Hua ^[2]; Sun, Yan ^[3]; Li, Xiaoguang ^[4]; Cui, Ping ^[5]; Franchini, Cesare ^[3]; Wang, Jinlan ^[6]; Chen, Xing-Qiu ^[3]; Zhang, Zhenyu ^[7]

Univ. of Science and Technology of China, Hefei (China). Hefei National Lab. for Physical Sciences at the Microscale. ICQD; Southeast Univ., Nanjing (China). Dept. of Physics; DOE/OSTI
Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics; Univ. of Texas, Austin, TX (United States). Dept. of Physics
Chinese Academy of Sciences (CAS), Shenyang (China). Inst. of Metal Research. Shenyang National Lab. for Materials Science
Fudan Univ., Shanghai (China). Dept. of Physics. State Key Lab. of Surface Physics; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics; Univ. of Science and Technology of China, Hefei (China). Hefei National Lab. for Physical Sciences at the Microscale. ICQD
Univ. of Science and Technology of China, Hefei (China). Hefei National Lab. for Physical Sciences at the Microscale. ICQD; Univ. of Tennessee, Knoxville, TN (United States). Dept. of Physics
Southeast Univ., Nanjing (China). Dept. of Physics
Univ. of Science and Technology of China, Hefei (China). Hefei National Lab. for Physical Sciences at the Microscale. ICQD; Harvard Univ., Cambridge, MA (United States). School of Applied Science and Engineering; Univ. of Texas, Austin, TX (United States). Dept. of Physics

In integrating topological insulators (TIs) with conventional materials, one crucial issue is how the topological surface states (TSS) will behave in such heterostructures. We use first-principles approaches to establish accurate tunability of the vertical location of the TSS via intriguing dual-proximity effects. By depositing a conventional insulator (CI) overlayer onto a TI substrate (Bi₂Se₃ or Bi₂Te₃), we demonstrate that, the TSS can float to the top of the CI film, or stay put at the CI/TI interface, or be pushed down deeper into the otherwise structurally homogeneous TI substrate. These contrasting behaviors imply a rich variety of possible quantum phase transitions in the hybrid systems, dictated by key material-specific properties of the CI. These discoveries lay the foundation for accurate manipulation of the real space properties of TSS in TI heterostructures of diverse technological significance.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Texas, Austin, TX (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: FG02-02ER45958; FG03-02ER45958

OSTI ID:: 1624588

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 3; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi2Te3 Wiesner, Maciej; Roberts, Richard H.; Lin, Jung-Fu. Scientific Reports, Vol. 9, Issue 1 https://doi.org/10.1038/s41598-019-42598-9	journal	April 2019
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