Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

Kriegner, D.; Výborný, K.; Olejník, K.; Reichlová, H.; Novák, V.; Marti, X.; Gazquez, J.; Saidl, V.; Němec, P.; Volobuev, V. V.; Springholz, G.; Holý, V.; Jungwirth, T.

doi:10.1038/ncomms11623

Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

Journal Article · Thu Jun 09 00:00:00 UTC 2016 · Nature Communications

DOI:https://doi.org/10.1038/ncomms11623· OSTI ID:1623836

^[1]; Výborný, K. ^[2]; Olejník, K. ^[2]; Reichlová, H. ^[2]; Novák, V. ^[2]; Marti, X. ^[2]; Gazquez, J. ^[3]; Saidl, V. ^[4]; Němec, P. ^[4]; Volobuev, V. V. ^[5]; Springholz, G. ^[6]; Holý, V. ^[4]; Jungwirth, T. ^[7]

Charles Univ., Prague (Czech Republic); DOE/OSTI
Academy of Science of the Czech Republic, Praha (Czech Republic). Inst. of Physics
Consejo Superior de Investigaciones Cientı´ficas CSIC, Campus UAB, Bellaterra (Spain). Institut de Cie`ncia de Materials de Barcelona ICMAB
Charles Univ., Prague (Czech Republic)
Johannes Kepler Univ. Linz (Austria); Natioinal Technical Univ., Kharkiv (Ukraine). Kharkiv Polytechnic Inst.
Johannes Kepler Univ. Linz (Austria)
Academy of Science of the Czech Republic, Praha (Czech Republic). Inst. of Physics; Univ. of Nottingham (United Kingdom). School of Physics and Astronomy

Commercial magnetic memories rely on the bistability of ordered spins in ferromagnetic materials. Recently, experimental bistable memories have been realized using fully compensated antiferromagnetic metals. Here we demonstrate a multiple-stable memory device in epitaxial MnTe, an antiferromagnetic counterpart of common II–VI semiconductors. Favourable micromagnetic characteristics of MnTe allow us to demonstrate a smoothly varying zero-field antiferromagnetic anisotropic magnetoresistance (AMR) with a harmonic angular dependence on the writing magnetic field angle, analogous to ferromagnets. The continuously varying AMR provides means for the electrical read-out of multiple-stable antiferromagnetic memory states, which we set by heat-assisted magneto-recording and by changing the writing field direction. The multiple stability in our memory is ascribed to different distributions of domains with the Ne´el vector aligned along one of the three magnetic easy axes. The robustness against strong magnetic field perturbations combined with the multiple stability of the magnetic memory states are unique properties of antiferromagnets.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1623836

Journal Information:: Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 7; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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