The emergence of saddle-point Van Hove singularities (VHSs) in the density of states, accompanied by a change in Fermi surface topology, Lifshitz transition, constitutes an ideal ground for the emergence of different electronic phenomena, such as superconductivity, pseudo-gap, magnetism, and density waves. However, in most materials the Fermi level, $$$${E}_{{\rm{F}}}$$$$ , is too far from the VHS where the change of electronic topology takes place, making it difficult to reach with standard chemical doping or gating techniques. Here, we demonstrate that this scenario can be realized at the interface between a Mott insulator and a band insulator as a result of quantum confinement and correlation enhancement, and easily tuned by fine control of layer thickness and orbital occupancy. These results provide a tunable pathway for Fermi surface topology and VHS engineering of electronic phases.
Mori, Ryo, et al. "Controlling a Van Hove singularity and Fermi surface topology at a complex oxide heterostructure interface." Nature Communications, vol. 10, no. 1, Dec. 2019. https://doi.org/10.1038/s41467-019-13046-z
Mori, Ryo, Marshall, Patrick B., Ahadi, Kaveh, Denlinger, Jonathan D., Stemmer, Susanne, & Lanzara, Alessandra (2019). Controlling a Van Hove singularity and Fermi surface topology at a complex oxide heterostructure interface. Nature Communications, 10(1). https://doi.org/10.1038/s41467-019-13046-z
Mori, Ryo, Marshall, Patrick B., Ahadi, Kaveh, et al., "Controlling a Van Hove singularity and Fermi surface topology at a complex oxide heterostructure interface," Nature Communications 10, no. 1 (2019), https://doi.org/10.1038/s41467-019-13046-z
@article{osti_1619601,
author = {Mori, Ryo and Marshall, Patrick B. and Ahadi, Kaveh and Denlinger, Jonathan D. and Stemmer, Susanne and Lanzara, Alessandra},
title = {Controlling a Van Hove singularity and Fermi surface topology at a complex oxide heterostructure interface},
annote = {Abstract The emergence of saddle-point Van Hove singularities (VHSs) in the density of states, accompanied by a change in Fermi surface topology, Lifshitz transition, constitutes an ideal ground for the emergence of different electronic phenomena, such as superconductivity, pseudo-gap, magnetism, and density waves. However, in most materials the Fermi level, $${E}_{{\rm{F}}}$$ E F , is too far from the VHS where the change of electronic topology takes place, making it difficult to reach with standard chemical doping or gating techniques. Here, we demonstrate that this scenario can be realized at the interface between a Mott insulator and a band insulator as a result of quantum confinement and correlation enhancement, and easily tuned by fine control of layer thickness and orbital occupancy. These results provide a tunable pathway for Fermi surface topology and VHS engineering of electronic phases. },
doi = {10.1038/s41467-019-13046-z},
url = {https://www.osti.gov/biblio/1619601},
journal = {Nature Communications},
issn = {ISSN 2041-1723},
number = {1},
volume = {10},
place = {United Kingdom},
publisher = {Nature Publishing Group},
year = {2019},
month = {12}}
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
Funai Foundation for Information Technology; Gordon and Betty Moore Foundation (GBMF); National Science Foundation (NSF); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division