High-Speed Nonpolar InGaN/GaN Superluminescent Diode With 2.5 GHz Modulation Bandwidth
Journal Article
·
· IEEE Photonics Technology Letters
- Univ. of New Mexico, Albuquerque, NM (United States); University of New Mexico
- Univ. of New Mexico, Albuquerque, NM (United States)
- Univ. of California, Santa Barbara, CA (United States)
We demonstrate a superluminescent diode fabricated on a nonpolar m-plane GaN substrate by employing a linearly tapered waveguide design. A high electrical -3dB modulation bandwidth ( f\n3dB\n) of 2.5 GHz at a current density of 30 kA/cm\n2\n is achieved. The high modulation bandwidth is attributed to the shorter carrier recombination lifetime, the linear gain curve in the nonpolar m-plane quantum wells, and the ability to operate at high current densities while effectively suppressing lasing. We derive a general expression for the -3dB bandwidth as a function of current density for SLDs using a similar approach to that for laser diodes. The -3dB bandwidth of a nonpolar superluminescent diode increases exponentially with current density. The experimental results are consistent with the derived expression for f\n3dB\n vs. current density.
- Research Organization:
- Univ. of New Mexico, Albuquerque, NM (United States)
- Sponsoring Organization:
- National Science Foundation (NSF); USDOE Office of Energy Efficiency and Renewable Energy (EERE); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Grant/Contract Number:
- SC0016618
- OSTI ID:
- 1618438
- Report Number(s):
- DOE-UNM--16618-2
- Journal Information:
- IEEE Photonics Technology Letters, Journal Name: IEEE Photonics Technology Letters Journal Issue: 7 Vol. 32; ISSN 1041-1135
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
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