Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

High-Speed Nonpolar InGaN/GaN Superluminescent Diode With 2.5 GHz Modulation Bandwidth

Journal Article · · IEEE Photonics Technology Letters
We demonstrate a superluminescent diode fabricated on a nonpolar m-plane GaN substrate by employing a linearly tapered waveguide design. A high electrical -3dB modulation bandwidth ( f\n3dB\n) of 2.5 GHz at a current density of 30 kA/cm\n2\n is achieved. The high modulation bandwidth is attributed to the shorter carrier recombination lifetime, the linear gain curve in the nonpolar m-plane quantum wells, and the ability to operate at high current densities while effectively suppressing lasing. We derive a general expression for the -3dB bandwidth as a function of current density for SLDs using a similar approach to that for laser diodes. The -3dB bandwidth of a nonpolar superluminescent diode increases exponentially with current density. The experimental results are consistent with the derived expression for f\n3dB\n vs. current density.
Research Organization:
Univ. of New Mexico, Albuquerque, NM (United States)
Sponsoring Organization:
National Science Foundation (NSF); USDOE Office of Energy Efficiency and Renewable Energy (EERE); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
SC0016618
OSTI ID:
1618438
Report Number(s):
DOE-UNM--16618-2
Journal Information:
IEEE Photonics Technology Letters, Journal Name: IEEE Photonics Technology Letters Journal Issue: 7 Vol. 32; ISSN 1041-1135
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English