Particle-Hole Symmetry and the Fractional Quantum Hall Effect in the Lowest Landau Level

Pan, W.; Kang, W.; Lilly, M. P.; Reno, J. L.; Baldwin, K. W.; West, K. W.; Pfeiffer, L. N.; Tsui, D. C.

doi:10.1103/PhysRevLett.124.156801

Particle-Hole Symmetry and the Fractional Quantum Hall Effect in the Lowest Landau Level

Journal Article · Wed Apr 15 00:00:00 EDT 2020 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.124.156801· OSTI ID:1618095

Pan, W. ^[1]; Kang, W. ^[2]; Lilly, M. P. ^[3]; Reno, J. L. ^[3]; Baldwin, K. W. ^[4]; West, K. W. ^[4]; Pfeiffer, L. N. ^[4]; Tsui, D. C. ^[4]

Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Univ. of Chicago, IL (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Princeton Univ., NJ (United States)

Here, we report on detailed experimental studies of a high-quality heterojunction insulated-gate field-effect transistor (HIGFET) to probe the particle-hole symmetry of the fractional quantum Hall effect (FQHE) states about half-filling in the lowest Landau level. The HIGFET is specially designed to vary the density of a two-dimensional electronic system under constant magnetic fields. We find in our constant magnetic field, variable density measurements that the sequence of FQHE states at filling factors ν = 1/3, 2/5, 3/7… and its particle-hole conjugate states at filling factors 1-ν = 2/3, 3/5, 4/7… have a very similar energy gap. Moreover, a reflection symmetry can be established in the magnetoconductivities between the ν and 1-ν states about half-filling. Our results demonstrate that the FQHE states in the lowest Landau level are manifestly particle-hole symmetric.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-CA), Livermore, CA (United States); Sandia National Laboratories, Albuquerque, NM

Sponsoring Organization:: National Science Foundation (NSF); USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1618095

Alternate ID(s):: OSTI ID: 1615071
OSTI ID: 1639077

Report Number(s):: SAND--2019-2052J; SAND--2020-6555J; 672876

Journal Information:: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 15 Vol. 124; ISSN 0031-9007; ISSN PRLTAO

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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