Particle-Hole Symmetry and the Fractional Quantum Hall Effect in the Lowest Landau Level
- Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Univ. of Chicago, IL (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Princeton Univ., NJ (United States)
Here, we report on detailed experimental studies of a high-quality heterojunction insulated-gate field-effect transistor (HIGFET) to probe the particle-hole symmetry of the fractional quantum Hall effect (FQHE) states about half-filling in the lowest Landau level. The HIGFET is specially designed to vary the density of a two-dimensional electronic system under constant magnetic fields. We find in our constant magnetic field, variable density measurements that the sequence of FQHE states at filling factors ν = 1/3, 2/5, 3/7… and its particle-hole conjugate states at filling factors 1-ν = 2/3, 3/5, 4/7… have a very similar energy gap. Moreover, a reflection symmetry can be established in the magnetoconductivities between the ν and 1-ν states about half-filling. Our results demonstrate that the FQHE states in the lowest Landau level are manifestly particle-hole symmetric.
- Research Organization:
- Sandia National Laboratories (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF)
- Grant/Contract Number:
- AC04-94AL85000; NA0003525
- OSTI ID:
- 1618095
- Alternate ID(s):
- OSTI ID: 1615071
OSTI ID: 1639077
- Report Number(s):
- SAND--2019-2052J; 672876
- Journal Information:
- Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 15 Vol. 124; ISSN 0031-9007; ISSN PRLTAO
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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