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Particle-Hole Symmetry and the Fractional Quantum Hall Effect in the Lowest Landau Level

Journal Article · · Physical Review Letters
 [1];  [2];  [3];  [3];  [4];  [4];  [4];  [4]
  1. Sandia National Lab. (SNL-CA), Livermore, CA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Univ. of Chicago, IL (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  4. Princeton Univ., NJ (United States)

Here, we report on detailed experimental studies of a high-quality heterojunction insulated-gate field-effect transistor (HIGFET) to probe the particle-hole symmetry of the fractional quantum Hall effect (FQHE) states about half-filling in the lowest Landau level. The HIGFET is specially designed to vary the density of a two-dimensional electronic system under constant magnetic fields. We find in our constant magnetic field, variable density measurements that the sequence of FQHE states at filling factors ν = 1/3, 2/5, 3/7… and its particle-hole conjugate states at filling factors 1-ν = 2/3, 3/5, 4/7… have a very similar energy gap. Moreover, a reflection symmetry can be established in the magnetoconductivities between the ν and 1-ν states about half-filling. Our results demonstrate that the FQHE states in the lowest Landau level are manifestly particle-hole symmetric.

Research Organization:
Sandia National Laboratories (SNL-CA), Livermore, CA (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF)
Grant/Contract Number:
AC04-94AL85000; NA0003525
OSTI ID:
1618095
Alternate ID(s):
OSTI ID: 1615071
OSTI ID: 1639077
Report Number(s):
SAND--2019-2052J; 672876
Journal Information:
Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 15 Vol. 124; ISSN 0031-9007; ISSN PRLTAO
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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