Determination of background doping type in type-II superlattice using capacitance-voltage measurements with double mesa structure

Journal Article · Thu Apr 23 00:00:00 EDT 2020 · Proceedings of SPIE - The International Society for Optical Engineering

DOI:https://doi.org/10.1117/12.2557105· OSTI ID:1617313

Fink, Douglas R. ^[1]; Lee, Seunghyun ^[1]; Kodati, Sri Harsha ^[1]; Dahiya, Vinita ^[1]; Ronningen, Theodore J. ^[1]; Winslow, Martin ^[2]; Grein, Christoph H. ^[2]; Jones, Andrew H. ^[3]; Campbell, Joe C. ^[3]; Klem, John F. ^[4]; Krishna, Sanjay ^[1]

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1. The Ohio State Univ., Columbus, OH (United States)
2. Univ. of Illinois, Chicago, IL (United States)
3. Univ. of Virginia, Charlottesville, VA (United States)
4. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Here, we present a method of determining the background doping type in semiconductors using capacitance-voltage measurements on overetched double mesa p-i-n or n-i-p structures. Unlike Hall measurements, this method is not limited by the conductivity of the substrate. By measuring the capacitance of devices with varying top and bottom mesa sizes, we were able to conclusively determine which mesa contained the p-n junction, revealing the polarity of the intrinsic layer. This method, when demonstrated on GaSb p-i-n and n-i-p structures, determined that the material is residually doped p-type, which is well established by other sources. The method was then applied on a 10 monolayer InAs/10 monolayer AlSb superlattice, for which the doping polarity was unknown, and indicated that this material is also p-type.

• Research Organization: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
• Grant/Contract Number: AC04-94AL85000; NA0003525
• OSTI ID: 1617313
• Alternate ID(s): OSTI ID: 1813917
• Report Number(s): SAND--2020-4057J; 685332
• Journal Information: Proceedings of SPIE - The International Society for Optical Engineering, Journal Name: Proceedings of SPIE - The International Society for Optical Engineering Vol. 11407; ISSN 0277-786X
• Publisher: SPIE
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
capacitance-voltage profiling
doping polarity
double mesa
semiconductors
superlattices