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III/V silicon hybrid laser based on a resonant Bragg structure

Journal Article · · Applied Optics
DOI:https://doi.org/10.1364/AO.390522· OSTI ID:1616644

We demonstrate a laser tunable in intensity with gigahertz tuning speed based on a III/V reflective semiconductor optical amplifier (RSOA) coupled to a silicon photonic chip. The silicon chip contains a Bragg-based Fabry–Perot resonator to form a passive bandpass filter within its stopband to enable single-mode operation of the laser. We observe a side mode suppression ratio of 43 dB, linewidth of 790 kHz, and an optical output power of 1.65 mW around 1530 nm. We also investigate using a micro-ball lens as an alternative coupling method between the RSOA and the silicon chip.

Sponsoring Organization:
USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE National Nuclear Security Administration (NNSA)
OSTI ID:
1616644
Journal Information:
Applied Optics, Journal Name: Applied Optics Journal Issue: 13 Vol. 59; ISSN APOPAI; ISSN 1559-128X
Publisher:
Optical Society of AmericaCopyright Statement
Country of Publication:
United States
Language:
English

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