High- κ polymers of intrinsic microporosity: a new class of high temperature and low loss dielectrics for printed electronics

Zhang, Zhongbo; Zheng, Jifu; Premasiri, Kasun; Kwok, Man-Hin; Li, Qiong; Li, Ruipeng; Zhang, Suobo; Litt, Morton H.; Gao, Xuan P.  A.; Zhu, Lei

doi:10.1039/C9MH01261C

Title: High- κ polymers of intrinsic microporosity: a new class of high temperature and low loss dielectrics for printed electronics

Journal Article · Thu Oct 31 00:00:00 EDT 2019 · Materials Horizons

DOI:https://doi.org/10.1039/C9MH01261C· OSTI ID:1616434

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Case Western Reserve Univ., Cleveland, OH (United States)
Chinese Academy of Sciences (CAS), Changchun (China). Key Lab. of Ecomaterials, Changchun Institute of Applied Chemistry
Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)

High performance polymer dielectrics are a key component for printed electronics. In this work, organo-soluble polymers of intrinsic microporosity (PIMs) are reported for the first time to demonstrate desirable dielectric properties with a high permittivity (or κ), heat resistance, and low dielectric loss simultaneously. Due to the highly dipolar sulfonyl side groups (4.5 D) and rigid contorted polymer backbone, a sulfonylated PIM (SO₂-PIM) enabled friction-free rotation of sulfonyl dipoles in the nanopores. As such, an optimal balance between relatively high κ and low dielectric loss is achieved in a broad temperature window (-50–200 °C). For example, the discharged energy density reached 17 J cm^-3 with κ = 6.0. The discharge efficiency was 94% at 150 °C/300 MV m^-1 and 88% at 200 °C/200 MV m^-1. Furthermore, its application as a high-κ gate dielectric in field effect transistors (FETs) is demonstrated. With the bilayer SO₂-PIM/SiO₂ gate dielectric, InSe FETs exhibited a high electron mobility in the range of 200–400 cm² V^-1 s^-1, as compared to 40 cm² V^-1 s^-1 for the bare SiO₂-gated InSe FET. This study indicates that highly dipolar PIMs with a rigid polymer backbone and large free volume are promising as next generation gate dielectric materials for printed electronics.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704

OSTI ID:: 1616434

Alternate ID(s):: OSTI ID: 1574039

Report Number(s):: BNL-213872-2020-JAAM; MHAOAL

Journal Information:: Materials Horizons, Vol. 7, Issue 2; ISSN 2051-6347

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 73 works

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