Performance of new radiation-tolerant thin planar and 3D columnar n on p silicon pixel sensors up to a maximum fluence of n /cm
- Fondazione Bruno Kessler, Trento (Italy); TIFPA-INFN, Trenton (Italy)
- Univ. degli Studi (Italy); National Inst. of Nuclear Physics (INFN), Firenze (Italy)
- TIFPA-INFN, Trenton (Italy); Univ. di Trento (Italy)
- National Inst. of Nuclear Physics (INFN), Genova (Italy)
- Univ. degli Studi di Milano-Bicocca, Milano (Italy); INFN-Bicocca, Milano (Italy)
- Fondazione Bruno Kessler, Trento (Italy)
- INFN-Bicocca, Milano (Italy)
- National Inst. of Nuclear Physics (INFN), Firenze (Italy)
- Univ. degli Studi di Pisa (Italy); National Inst. of Nuclear Physics (INFN), Pisa (Italy)
- Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
- Hamburg Univ. (Germany)
The High Luminosity upgrade of the CERN Large Hadron Collider (HL-LHC) calls for new high radiation-tolerant solid-state pixel sensors, capable of surviving irradiation fluences up to a few n /cm at cm from the interaction point. The INFN ATLAS-CMS joint research activity, in collaboration with Fondazione Bruno Kessler, is aiming at the development of thin n on p type pixel sensors to be operated at the HL-LHC. The R&D covers both planar and 3D pixel devices made on substrates obtained by the Direct Wafer Bonding technique. The active thickness of the planar sensors studied in this paper is or , that of 3D sensors . First prototypes of hybrid modules, bump-bonded to the present CMS readout chips (PSI46 digital), have been characterized in beam tests. Finally, first results on their performance before and after irradiation up to a maximum fluence of n /cm are reported in this article.
- Research Organization:
- Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), High Energy Physics (HEP)
- Grant/Contract Number:
- AC02-07CH11359; 654168
- OSTI ID:
- 1616318
- Report Number(s):
- FERMILAB-PUB-20-147-SCD; oai:inspirehep.net:1770383; TRN: US2106441
- Journal Information:
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 953, Issue C; ISSN 0168-9002
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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Performance of thin planar n-on-p silicon pixels after HL-LHC radiation fluences
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journal | May 2019 |
First results on 3D pixel sensors interconnected to the RD53A readout chip after irradiation to 1×10 16 neq cm −2
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journal | June 2019 |
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