Performance of new radiation-tolerant thin planar and 3D columnar n + on p silicon pixel sensors up to a maximum fluence of ~5×1015 n eq /cm 2

Boscardin, M.; Ceccarelli, R.; Dalla Betta, G. F.; Darbo, G.; Dinardo, M. E.; Giacomini, G.; Menasce, D.; Mendicino, R.; Meschini, M.; Messineo, A.; Moroni, L.; Rivera, R.; Ronchin, S.; Sultan, D. M. S.; Uplegger, L.; Viliani, L.; Zoi, I.; Zuolo, D.

doi:10.1016/j.nima.2019.163222

Performance of new radiation-tolerant thin planar and 3D columnar n $^{+}$ on p silicon pixel sensors up to a maximum fluence of $~ 5 \times 1 0^{15}$ n $_{eq}$ /cm $^{2}$

Journal Article · Tue Dec 03 23:00:00 EST 2019 · Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment

DOI:https://doi.org/10.1016/j.nima.2019.163222· OSTI ID:1616318

Boscardin, M. ^[1]; Ceccarelli, R. ^[2]; Dalla Betta, G. F. ^[3]; Darbo, G. ^[4]; Dinardo, M. E. ^[5]; Giacomini, G. ^[6]; Menasce, D. ^[7]; Mendicino, R. ^[3]; Meschini, M. ^[8]; Messineo, A. ^[9]; Moroni, L. ^[7]; Rivera, R. ^[10]; Ronchin, S. ^[6]; Sultan, D. M. S. ^[3]; Uplegger, L. ^[10]; Viliani, L. ^[8]; Zoi, I. ^[11]; Zuolo, D. ^[5]

Fondazione Bruno Kessler, Trento (Italy); TIFPA-INFN, Trenton (Italy)
Univ. degli Studi (Italy); National Inst. of Nuclear Physics (INFN), Firenze (Italy)
TIFPA-INFN, Trenton (Italy); Univ. di Trento (Italy)
National Inst. of Nuclear Physics (INFN), Genova (Italy)
Univ. degli Studi di Milano-Bicocca, Milano (Italy); INFN-Bicocca, Milano (Italy)
Fondazione Bruno Kessler, Trento (Italy)
INFN-Bicocca, Milano (Italy)
National Inst. of Nuclear Physics (INFN), Firenze (Italy)
Univ. degli Studi di Pisa (Italy); National Inst. of Nuclear Physics (INFN), Pisa (Italy)
Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Hamburg Univ. (Germany)

The High Luminosity upgrade of the CERN Large Hadron Collider (HL-LHC) calls for new high radiation-tolerant solid-state pixel sensors, capable of surviving irradiation fluences up to a few $1 0^{16}$ n $_{eq}$ /cm $^{2}$ at $~ 3$ cm from the interaction point. The INFN ATLAS-CMS joint research activity, in collaboration with Fondazione Bruno Kessler, is aiming at the development of thin n $^{+}$ on p type pixel sensors to be operated at the HL-LHC. The R&D covers both planar and 3D pixel devices made on substrates obtained by the Direct Wafer Bonding technique. The active thickness of the planar sensors studied in this paper is $100 μ m$ or $130 μ m$ , that of 3D sensors $130 μ m$ . First prototypes of hybrid modules, bump-bonded to the present CMS readout chips (PSI46 digital), have been characterized in beam tests. Finally, first results on their performance before and after irradiation up to a maximum fluence of $~ 5 \times 1 0^{15}$ n $_{eq}$ /cm $^{2}$ are reported in this article.

Research Organization:: Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)

Grant/Contract Number:: AC02-07CH11359

OSTI ID:: 1616318

Report Number(s):: FERMILAB-PUB--20-147-SCD; oai:inspirehep.net:1770383

Journal Information:: Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment, Journal Name: Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment Journal Issue: C Vol. 953; ISSN 0168-9002

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

References (10)

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