Giant defect emission enhancement from ZnO nanowires through desulfurization process
- Univ. de Technologie de Troyes, Troyes (France). Inst. Charles Delaunay; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Univ. de Technologie de Troyes, Troyes (France). Inst. Charles Delaunay
- Univ. de Versailles, Saint Quentin-en-Yveline, Versailles, (France)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- National Central Univ., Taoyuan (Taiwan)
Zinc oxide (ZnO) is a stable, direct bandgap semiconductor emitting in the UV with a multitude of technical applications. It is well known that ZnO emission can be shifted into the green for visible light applications through the introduction of defects. However, generating consistent and efficient green emission through this process is challenging, particularly given that the chemical or atomic origin of the green emission in ZnO is still under debate. In this work we present a new method, for which we coin term desulfurization, for creating green emitting ZnO with significantly enhanced quantum efficiency. Solution grown ZnO nanowires are partially converted to ZnS, then desulfurized back to ZnO, resulting in a highly controlled concentration of oxygen defects as determined by X-ray photoelectron spectroscopy and electron paramagnetic resonance. Using this controlled placement of oxygen vacancies we observe a greater than 40-fold enhancement of integrated emission intensity and explore the nature of this enhancement through low temperature photoluminescence experiments.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC); Chinese Scholarship Council; Ministry of Science and Technology of Taiwan (MOST); European Regional Development Fund
- Grant/Contract Number:
- AC02-05CH11231; MOST-106-2112-M-008- 003-MY3
- OSTI ID:
- 1615318
- Journal Information:
- Scientific Reports, Vol. 10, Issue 1; ISSN 2045-2322
- Publisher:
- Nature Publishing GroupCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Similar Records
Near band edge photoluminescence of ZnO nanowires: Optimization via surface engineering
Prediction of two-dimensional topological insulator by forming a surface alloy on Au/Si(111) substrate