Enhanced thermal stability by introducing TiN diffusion barrier layer between W and SiC

Cheng, Ping; DelaCruz, Steven; Tsai, Dung‐Sheng; Wang, Zhongtao; Carraro, Carlo; Maboudian, Roya

doi:10.1111/jace.16392

Title: Enhanced thermal stability by introducing TiN diffusion barrier layer between W and SiC

Journal Article · Mon Feb 18 00:00:00 EST 2019 · Journal of the American Ceramic Society

DOI:https://doi.org/10.1111/jace.16392· OSTI ID:1613676

^[1];

^[2]; Tsai, Dung‐Sheng ^[2]; Wang, Zhongtao ^[2]; Carraro, Carlo ^[2];

^[2]

Shanghai Jiao Tong Univ. (China). National Key Lab. of Science and Technology on Micro/Nano Fabrication; Univ. of California, Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States)

Abstract The combination of W and SiC has many applications such as a hot cell of a thermionic energy converter, nuclear material, and high temperature microelectronics. In this study, a 2 µm thick TiN film is introduced as a diffusion barrier between SiC and W to avoid the inter‐diffusion reaction at high temperature. The effect of annealing temperature on the surface morphology and microstructure of the TiN film is studied to explore its high temperature stability. Then 500 nm W film is sputtered on the TiN film to characterize the inter‐diffusion and stability of the W/TiN/SiC multilayer at 1100°C by XRD, Raman spectroscopy and cross‐sectional EDS mapping techniques. The results indicate that the W/TiN/SiC multilayer is very stable even when heated at 1100°C for 25 hours.

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Research Organization:: Stanford Univ., CA (United States)

Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AR0000664; AC02-05CH11231; DE‐AR0000664

OSTI ID:: 1613676

Alternate ID(s):: OSTI ID: 1498578

Journal Information:: Journal of the American Ceramic Society, Vol. 102, Issue 9; ISSN 0002-7820

Publisher:: American Ceramic SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 3 works

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References (22)

Influence of radiation damage on xenon diffusion in silicon carbide Friedland, E.; Gärtner, K.; Hlatshwayo, T. T. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 332 https://doi.org/10.1016/j.nimb.2014.02.109	journal	August 2014
Effects of annealing temperature on the structure and electrical properties of tungsten contacts to n-type silicon carbide Rogowski, Jacek; Kubiak, Andrzej Materials Science and Engineering: B, Vol. 191 https://doi.org/10.1016/j.mseb.2014.10.015	journal	January 2015
Surface energy of arbitrary crystal plane of bcc and fcc metals Wang, S. G.; Tian, E. K.; Lung, C. W. Journal of Physics and Chemistry of Solids, Vol. 61, Issue 8 https://doi.org/10.1016/S0022-3697(99)00415-1	journal	August 2000
Raman microscopic studies of PVD hard coatings Constable, C. P.; Yarwood, J.; Münz, W. -D. Surface and Coatings Technology, Vol. 116-119 https://doi.org/10.1016/S0257-8972(99)00072-9	journal	September 1999
Scanning electron microscopy of the surfaces of ion implanted SiC Malherbe, Johan B.; van der Berg, N. G.; Kuhudzai, R. J. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 354 https://doi.org/10.1016/j.nimb.2015.01.045	journal	July 2015
TiN diffusion barrier for stable W/SiC(0001) interfaces in inert ambient at high temperature DelaCruz, Steven; Wang, Zhongtao; Cheng, Ping Thin Solid Films, Vol. 670 https://doi.org/10.1016/j.tsf.2018.11.058	journal	January 2019
Effect of deposition conditions and post deposition anneal on reactively sputtered titanium nitride thin films Ponon, Nikhil K.; Appleby, Daniel J. R.; Arac, Erhan Thin Solid Films, Vol. 578 https://doi.org/10.1016/j.tsf.2015.02.009	journal	March 2015
Annealing effects on the properties of tin thin films Popovic, Maja; Novakovic, Mirjana; Bibic, Natasa Processing and Application of Ceramics, Vol. 9, Issue 2 https://doi.org/10.2298/PAC1502067P	journal	January 2015
Effects of strain energy on the preferred orientation of TiN thin films Oh, U. C.; Je, Jung Ho Journal of Applied Physics, Vol. 74, Issue 3 https://doi.org/10.1063/1.355297	journal	August 1993
High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions Seal, Sayan; Mantooth, Homer Energies, Vol. 10, Issue 3 https://doi.org/10.3390/en10030341	journal	March 2017
Diffusion Bonding Technology of Tungsten and SiC/SiC Composites for Nuclear Applications Kishimoto, Hirotatsu; Shibayama, Tamaki; Abe, Takahiro IOP Conference Series: Materials Science and Engineering, Vol. 18, Issue 16 https://doi.org/10.1088/1757-899X/18/16/162015	journal	September 2011
Microstructural and mechanical characterization of W/SiC bonding for structural material in fusion Kishimoto, H.; Shibayama, T.; Shimoda, K. Journal of Nuclear Materials, Vol. 417, Issue 1-3 https://doi.org/10.1016/j.jnucmat.2010.12.079	journal	October 2011
Review on Thermionic Energy Converters Abdul Khalid, Kamarul Aizat; Leong, Thye Jien; Mohamed, Khairudin IEEE Transactions on Electron Devices, Vol. 63, Issue 6 https://doi.org/10.1109/TED.2016.2556751	journal	June 2016
Stress and strain in titanium nitride thin films Machunze, R.; Janssen, G. C. A. M. Thin Solid Films, Vol. 517, Issue 20 https://doi.org/10.1016/j.tsf.2009.04.020	journal	August 2009
Raman spectroscopy studies on the thermal stability of TiN, CrN, TiAlN coatings and nanolayered TiN/CrN, TiAlN/CrN multilayer coatings Barshilia, Harish C.; Rajam, K. S. Journal of Materials Research, Vol. 19, Issue 11 https://doi.org/10.1557/JMR.2004.0444	journal	November 2004
Interfacial reactions and surface analysis of W thin film on 6H-SiC Thabethe, T. T.; Hlatshwayo, T. T.; Njoroge, E. G. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 371 https://doi.org/10.1016/j.nimb.2015.10.063	journal	March 2016
Overall energy model for preferred growth of TiN films during filtered arc deposition Zhao, J. P.; Wang, X.; Chen, Z. Y. Journal of Physics D: Applied Physics, Vol. 30, Issue 1 https://doi.org/10.1088/0022-3727/30/1/002	journal	January 1997
Schottky diodes: effect of sputtering deposition conditions on the barrier height Mamor, M.; Dufour-Gergam, E.; Finkman, L. Applied Surface Science, Vol. 91, Issue 1-4 https://doi.org/10.1016/0169-4332(95)00142-5	journal	October 1995
Surface and interface structural analysis of W deposited on 6H–SiC substrates annealed in argon Thabethe, T. T.; Njoroge, E. G.; Hlatshwayo, T. T. RSC Advances, Vol. 7, Issue 1 https://doi.org/10.1039/C6RA24825J	journal	January 2017
Very low drift and high sensitivity of nanocrystal-TiO2 sensing membrane on pH-ISFET fabricated by CMOS compatible process Bunjongpru, W.; Sungthong, A.; Porntheeraphat, S. Applied Surface Science, Vol. 267 https://doi.org/10.1016/j.apsusc.2012.10.176	journal	February 2013
Raman spectroscopy and x-ray diffraction studies of (Ti,Al)N films deposited by filtered cathodic vacuum arc at room temperature Cheng, Y. H.; Tay, B. K.; Lau, S. P. Journal of Applied Physics, Vol. 89, Issue 11 https://doi.org/10.1063/1.1352564	journal	June 2001
Sic: an Advanced Semicondctor Material for Power Devices ., Ajay Kumar International Journal of Research in Engineering and Technology, Vol. 03, Issue 15 https://doi.org/10.15623/ijret.2014.0315048	journal	May 2014

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36 MATERIALS SCIENCE
diffusion barrier layer
interface stability
SiC
TiN film
W film

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