Dual-source evaporation of silver bismuth iodide films for planar junction solar cells
Journal Article
·
· Journal of Materials Chemistry. A
- Duke Univ., Durham, NC (United States); Univ. of Duisburg-Essen (Germany); DOE/OSTI
- Duke Univ., Durham, NC (United States)
- North Carolina State Univ., Raleigh, NC (United States)
- Duke Univ., Durham, NC (United States); Dalhousie Univ., Halifax, NS (Canada)
- Dalhousie Univ., Halifax, NS (Canada)
- Univ. of Duisburg-Essen (Germany)
Non-toxic and air-stable silver bismuth iodide semiconductors are promising light absorber candidates for photovoltaic applications owing to a suitable band gap for multi- or single-junction solar cells. Recently, solution-based film fabrication approaches for several silver bismuth iodide stoichiometries have been investigated. The current work reports on a facile and reproducible two-step coevaporation/annealing approach to deposit compact and pinhole-free films of AgBi2I7, AgBiI4 and Ag2BiI5. X-ray diffraction (XRD) in combination with scanning electron microscopy (SEM)/energy-dispersive X-ray spectroscopy (EDX) analysis reveals formation of pure cubic (Fd$$\bar{3}$$m) with combining macron]m) phase AgBi2I7, cubic (Fd$$\bar{3}$$m) or rhombohedra (R$$\bar{3}$$m with combining macron]m) phase AgBiI4, each with >3 μm average grain size, or the rhombohedral phase (R$$\bar{3}$$m) Ag2BiI5 with >200 nm average grain size. A phase transition from rhombohedral to cubic structure is investigated via temperature-dependent X-ray diffraction (TD-XRD). Planar-junction photovoltaic (PV) devices are prepared based on the coevaporated rhombohedral AgBiI4 films, with titanium dioxide (TiO2) and poly(3-hexylthiophene) (P3HT) as electron- and hole-transport layers, respectively. Finally, the best-performing device exhibited a power conversion efficiency (PCE) of as high as 0.9% with open-circuit voltage (VOC) > 0.8 V in the reverse scan direction (with significant hysteresis).
- Research Organization:
- Duke Univ., Durham, NC (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE); National Science Foundation (NSF)
- Grant/Contract Number:
- EE0006712
- OSTI ID:
- 1613380
- Alternate ID(s):
- OSTI ID: 1490501
- Journal Information:
- Journal of Materials Chemistry. A, Journal Name: Journal of Materials Chemistry. A Journal Issue: 5 Vol. 7; ISSN 2050-7488
- Publisher:
- Royal Society of ChemistryCopyright Statement
- Country of Publication:
- United States
- Language:
- English
From Pb to Bi: A Promising Family of Pb‐Free Optoelectronic Materials and Devices
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