Room-temperature spin-to-charge conversion in sputtered bismuth selenide thin films via spin pumping from yttrium iron garnet

DC, Mahendra; Liu, Tao; Chen, Jun-Yang; Peterson, Thomas; Sahu, Protyush; Li, Hongshi; Zhao, Zhengyang; Wu, Mingzhong; Wang, Jian-Ping

doi:10.1063/1.5054806

Title: Room-temperature spin-to-charge conversion in sputtered bismuth selenide thin films via spin pumping from yttrium iron garnet

Journal Article · Mon Mar 11 00:00:00 EDT 2019 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5054806· OSTI ID:1613045

DC, Mahendra ^[1]; Liu, Tao ^[2];

^[1]; Peterson, Thomas ^[1]; Sahu, Protyush ^[1]; Li, Hongshi ^[1];

^[1]; Wu, Mingzhong ^[2]; Wang, Jian-Ping ^[1]

Univ. of Minnesota, Minneapolis, MN (United States)
Univ. of Colorado, Fort Collins, CO (United States)

We investigated spin-to-charge current conversion in sputtered Y₃Fe₅O₁₂ (YIG)/granular bismuth selenide (GBS) bi-layers at room temperature. The spin current is pumped to the GBS layer by the precession of magnetization at ferromagnetic resonance in the YIG layer. The spin-mixing conductance is determined to be as large as (13.64 ± 1.32) × 10¹⁸ m^-2, which is larger than that of YIG/Pt and comparable or better than that of YIG/crystalline bismuth selenide indicating that GBS is a good spin-sink. The figure of merit of spin-to-charge conversion, the inverse Edelstein effect length ( $λ_{IEE}$ ), is estimated to be as large as (0.11 ± 0.03) nm. $λ_{IEE}$ shows GBS film thickness dependence, and its value is three times as large as in crystalline bismuth selenide. The $λ_{IEE}$ value larger than that of crystalline bismuth selenide and other topological insulators indicates that the spin-to-charge conversion is due to the spin-momentum locking. As the thickness of GBS increases, $λ_{IEE}$ decreases, which means the figure-of-merit of spin-to-charge conversion is influenced by grain size.

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Research Organization:: Colorado State Univ., Fort Collins, CO (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: SC0018994

OSTI ID:: 1613045

Journal Information:: Applied Physics Letters, Vol. 114, Issue 10; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 8 works

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