Highly Uniform Resistive Switching in HfO2 Films Embedded with Ordered Metal Nanoisland Arrays

Wang, Jiaying; Li, Linze; Huyan, Huaixun; Pan, Xiaoqing; Nonnenmann, Stephen S.

doi:10.1002/adfm.201808430

Title: Highly Uniform Resistive Switching in HfO₂ Films Embedded with Ordered Metal Nanoisland Arrays

Journal Article · Tue Apr 16 00:00:00 EDT 2019 · Advanced Functional Materials

DOI:https://doi.org/10.1002/adfm.201808430· OSTI ID:1612194

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Univ. of Massachusetts, Amherst, MA (United States)
Univ. of California, Irvine, CA (United States)

Abstract Memristors enter a critical developmental stage where emerging large‐scale integration methods face major challenges with severe switching instabilities in the oxide layer. Here, the superior uniformity is achieved within HfO ₂ films by embedding highly ordered metal nanoisland (NI) arrays. Embedded films exhibit a significant reduction in both SET and RESET while displaying enhanced uniformity in operating voltages and resistance states. This behavior is attributed to the concentration of electric fields along Pt and Ti NIs and their interactions with the surrounding oxide film matrix environment, which induce separate and distinct filamentary formation mechanisms that affect the stability. A method is reported to further optimize the uniformity of the SET voltage by translating the NI array position down the film‐thickness dimension towards the bottom electrode. A comparison of the density and distribution of the oxygen vacancies responsible for the formation/dissolution of conducting filaments is made via combined electrostatic force microscopy and conductive atomic force microscopy (c‐AFM) studies. Finally, complete observation of the morphological evolution of conducting filaments produced by Pt and Ti is enabled by 3D c‐AFM nanotomography and cross‐sectional scanning transmission electron microscopy–energy dispersive spectroscopy to provide direct correlations between NI‐oxide interactions and overall switching performance.

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Research Organization:: Univ. of California, Irvine, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; National Science Foundation (NSF); USDOE

Grant/Contract Number:: SC0014430; CMMI-1025020; CBET-1706113; DMR-1629270; DMR-1506535; DE‐SC0014430

OSTI ID:: 1612194

Alternate ID(s):: OSTI ID: 1507442

Journal Information:: Advanced Functional Materials, Vol. 29, Issue 25; ISSN 1616-301X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 30 works

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Title: Highly Uniform Resistive Switching in HfO₂ Films Embedded with Ordered Metal Nanoisland Arrays