Concurrent atomistic-continuum modeling of crystalline materials
Journal Article
·
· Journal of Applied Physics
- Univ. of Florida, Gainesville, FL (United States); DOE/OSTI
- Univ. of Florida, Gainesville, FL (United States)
- Georgia Inst. of Technology, Atlanta, GA (United States)
In the work reported here, we present a concurrent atomistic-continuum (CAC) method for modeling and simulation of crystalline materials. The CAC formulation extends the Irving-Kirkwood procedure for deriving transport equations and fluxes for homogenized molecular systems to that for polyatomic crystalline materials by employing a concurrent two-level description of the structure and dynamics of crystals. A multiscale representation of conservation laws is formulated, as a direct consequence of Newton's second law, in terms of instantaneous expressions of unit cell-averaged quantities using the mathematical theory of distributions. Finite element (FE) solutions to the conservation equations, as well as fluxes and temperature in the FE representation, are introduced, followed by numerical examples of the atomic-scale structure of interfaces, dynamics of fracture and dislocations, and phonon thermal transport across grain boundaries. In addition to providing a methodology for concurrent multiscale simulation of transport processes under a single theoretical framework, the CAC formulation can also be used to compute fluxes (stress and heat flux) in atomistic and coarse-grained atomistic simulations.
- Research Organization:
- Univ. of Florida, Gainesville, FL (United States)
- Sponsoring Organization:
- National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- Grant/Contract Number:
- SC0006539
- OSTI ID:
- 1610864
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 126; ISSN JAPIAU; ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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