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Title: Transformation of the Topological Phase and the Edge Modes of Double-Bilayer Bismuthene with Inter-Bilayer Spacing

Journal Article · · Crystals
DOI:https://doi.org/10.3390/cryst9050266· OSTI ID:1609843
 [1];  [1];  [2];  [1];  [3];  [1]
  1. Nanjing Univ. of Science and Technology, Nanjing (China)
  2. Shandong Univ. of Science and Technology, Qingdao (China)
  3. Univ. of Illinois at Urbana-Champaign, IL (United States). Frederick Seitz Materials Research Lab.; National Taiwan Univ., Taipei (Taiwan)

The transformations of the topological phase and the edge modes of a double-bilayer bismuthene were investigated with first-principles calculations and Green’s function as the inter-bilayer spacing increased from 0 Å to 10 Å. At a critical spacing of 2 Å, a topological phase transition from a topological insulator to a band insulator resulting from a band inversion between the highest valence band and the second lowest conduction band, was observed, and this was understood based on the particular orbital characters of the band inversion involved states. The edge modes of double-bilayer bismuthene survived the phase transition. When d was 2 Å < d < 4 Å, the interaction between the edge modes of two separated bismuthene bilayers induced an anti-crossing gap and resulted in a trivial band connection. At and beyond 4 Å, the two bilayers behavior decoupled entirely. The results demonstrate the transformability of the topological phase and the edge modes with the inter-bilayer spacing in double-bilayer bismuthene, which may be useful for spintronic applications.

Research Organization:
Univ. of Illinois at Urbana-Champaign, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
Grant/Contract Number:
FG02-07ER46383
OSTI ID:
1609843
Journal Information:
Crystals, Vol. 9, Issue 5; ISSN 2073-4352
Publisher:
MDPICopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

References (37)

Electronic Structure of Ultrathin Bismuth Films with A7 and Black-Phosphorus-like Structures journal January 2008
First-principles investigation of structural and electronic properties of ultrathin Bi films journal January 2008
Nontrivial topological electronic structures in a single Bi(111) bilayer on different substrates: A first-principles study journal October 2013
Topological insulators with inversion symmetry journal July 2007
Tunability of the Quantum Spin Hall Effect in Bi(110) Films: Effects of Electric Field and Strain Engineering journal June 2017
Special points for Brillouin-zone integrations journal June 1976
Simplified LCAO Method for the Periodic Potential Problem journal June 1954
Edge engineering of a topological Bi(111) bilayer journal October 2014
Oscillatory crossover from two-dimensional to three-dimensional topological insulators journal January 2010
Relativistic separable dual-space Gaussian pseudopotentials from H to Rn journal August 1998
Colloquium: Topological insulators journal November 2010
Quantized Hall conductance as a topological invariant journal March 1985
Large-Gap Quantum Spin Hall Insulator in Single Layer Bismuth Monobromide Bi 4 Br 4 journal July 2014
Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells journal December 2006
Tuning Topological Edge States of Bi(111) Bilayer Film by Edge Adsorption journal April 2014
Spatial and Energy Distribution of Topological Edge States in Single Bi(111) Bilayer journal July 2012
Topological surface states protected from backscattering by chiral spin texture journal August 2009
Spintronics and pseudospintronics in graphene and topological insulators journal April 2012
Spin Polarization and Transport of Surface States in the Topological Insulators Bi 2 Se 3 and Bi 2 Te 3 from First Principles journal December 2010
ABINIT: First-principles approach to material and nanosystem properties journal December 2009
Semiempirical GGA-type density functional constructed with a long-range dispersion correction journal January 2006
WannierTools: An open-source software package for novel topological materials journal March 2018
Robustness of two-dimensional topological insulator states in bilayer bismuth against strain and electrical field journal June 2013
Stable Nontrivial Z 2 Topology in Ultrathin Bi (111) Films: A First-Principles Study journal September 2011
Atomic and Electronic Structure of Ultrathin Bi(111) Films Grown on Bi 2 Te 3 ( 111 ) Substrates: Evidence for a Strain-Induced Topological Phase Transition journal November 2012
A topological insulator surface under strong Coulomb, magnetic and disorder perturbations journal December 2010
A brief introduction to the ABINIT software package journal January 2005
Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit journal June 2010
Visualizing topological edge states of single and double bilayer Bi supported on multibilayer Bi(111) films journal December 2018
Silicon-based chalcogenide: Unexpected quantum spin Hall insulator with sizable band gap journal October 2016
Interfacing 2D and 3D Topological Insulators: Bi(111) Bilayer on Bi 2 Te 3 journal October 2011
WannierTools: An open-source software package for novel topological materials text January 2018
Topological Surface States Protected From Backscattering by Chiral Spin Texture text January 2009
A topological insulator surface under strong Coulomb, magnetic and disorder perturbations text January 2011
WannierTools: An open-source software package for novel topological materials text January 2017
Quantum Spin Hall Effect and Enhanced Magnetic Response by Spin-Orbit Coupling text January 2006
Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells text January 2006

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