Transformation of the Topological Phase and the Edge Modes of Double-Bilayer Bismuthene with Inter-Bilayer Spacing
- Nanjing Univ. of Science and Technology, Nanjing (China)
- Shandong Univ. of Science and Technology, Qingdao (China)
- Univ. of Illinois at Urbana-Champaign, IL (United States). Frederick Seitz Materials Research Lab.; National Taiwan Univ., Taipei (Taiwan)
The transformations of the topological phase and the edge modes of a double-bilayer bismuthene were investigated with first-principles calculations and Green’s function as the inter-bilayer spacing increased from 0 Å to 10 Å. At a critical spacing of 2 Å, a topological phase transition from a topological insulator to a band insulator resulting from a band inversion between the highest valence band and the second lowest conduction band, was observed, and this was understood based on the particular orbital characters of the band inversion involved states. The edge modes of double-bilayer bismuthene survived the phase transition. When d was 2 Å < d < 4 Å, the interaction between the edge modes of two separated bismuthene bilayers induced an anti-crossing gap and resulted in a trivial band connection. At and beyond 4 Å, the two bilayers behavior decoupled entirely. The results demonstrate the transformability of the topological phase and the edge modes with the inter-bilayer spacing in double-bilayer bismuthene, which may be useful for spintronic applications.
- Research Organization:
- Univ. of Illinois at Urbana-Champaign, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- Grant/Contract Number:
- FG02-07ER46383
- OSTI ID:
- 1609843
- Journal Information:
- Crystals, Vol. 9, Issue 5; ISSN 2073-4352
- Publisher:
- MDPICopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Recent Advances in Novel Topological Materials
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journal | February 2020 |
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