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High-field spatial imaging of charge transport in silicon at low temperature

Journal Article · · AIP Advances
DOI:https://doi.org/10.1063/1.5131171· OSTI ID:1608949
 [1];  [1];  [2];  [3];  [4];  [3];  [1];  [3];  [1];  [5];  [1];  [6]
  1. Stanford Univ., CA (United States)
  2. Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States); Univ. of Chicago, IL (United States)
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  4. Stanford Univ., CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
  5. San Diego State Univ., San Diego, CA (United States)
  6. Santa Clara Univ., CA (United States)
+ Show Author Affiliations

We present direct imaging measurements of charge transport across a 1 cm × 1 cm × 4 mm-thick crystal of high purity silicon (~15 kΩ-cm) at temperatures of 5 K and 500 mK. We use these data to measure lateral diffusion of electrons and holes as a function of the electric field applied along the [111] crystal axis and to verify our low-temperature Monte Carlo software. The range of field strengths in this paper exceed those used in our previous study [R. A. Moffatt et al., Appl. Phys. Lett. 114, 032104 (2019)] by a factor of 10 and now encompass the region in which some recent silicon dark matter detectors operate [R. Agnese et al., Phys. Rev. Lett. 121, 051301 (2018)]. Finally, we also report on a phenomenon of surface charge trapping, which can reduce expected charge collection.

Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Organization:
USDOE; National Science Foundation (NSF)
Grant/Contract Number:
AC02-76SF00515; AC02-07CH11359
OSTI ID:
1608949
Alternate ID(s):
OSTI ID: 1615366
OSTI ID: 1598914
Journal Information:
AIP Advances, Journal Name: AIP Advances Journal Issue: 2 Vol. 10; ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

References (13)

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journal April 1990
Thermal detection of single e-h pairs in a biased silicon crystal detector journal January 2018
Spatial imaging of charge transport in silicon at low temperature journal January 2019
Single-Electron and Single-Photon Sensitivity with a Silicon Skipper CCD journal September 2017
First Dark Matter Constraints from a SuperCDMS Single-Charge Sensitive Detector journal August 2018
SENSEI: Direct-Detection Constraints on Sub-GeV Dark Matter from a Shallow Underground Run Using a Prototype Skipper CCD journal April 2019
Energy-Band Structure of Germanium and Silicon: The k·p Method journal February 1966
Cyclotron Resonance of Electrons and Holes in Silicon and Germanium Crystals journal April 1955
Electron drift velocity in silicon journal September 1975
Hole drift velocity in silicon journal October 1975
The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials journal July 1983

Cited By (1)

Diamond Detectors for Direct Detection of Sub-GeV Dark Matter text January 2019

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72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS