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Title: Nodeless Superconducting Gap in the Candidate Topological Superconductor Sn{sub 1-x}In{sub x}Te for x=0.7.

Journal Article · · Physical Review B

High-pressure synthesis techniques have allowed for the growth of Sn1-xInxTe samples beyond the ambient In-saturation limit of x = 0.5 (T-c similar to 4.5 K). In this study we present measurements of the temperature dependence of the London penetration depth Delta lambda(T) in this superconducting doped topological insulator for x = 0.7, where T-c(,onset) approximate to 5 K. The results indicate fully gapped BCS-like behavior, ruling out odd-parity A(2u), pairing; however, odd-parity A(1u) in pairing is still possible. Critical field values measured below 1 K and other superconducting parameters are also presented.

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science - Office of Basic Energy Sciences - Materials Sciences and Engineering Division; Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan
DOE Contract Number:
AC02-06CH11357
OSTI ID:
1608297
Journal Information:
Physical Review B, Vol. 101, Issue 9
Country of Publication:
United States
Language:
English

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