Organismic materials for beyond von Neumann machines

Zhang, Hai-Tian; Panda, Priyadarshini; Lin, Jerome; Kalcheim, Yoav; Wang, Kai; Freeland, John W.; Fong, Dillon D.; Priya, Shashank; Schuller, Ivan K.; Sankaranarayanan, Subramanian K. R. S.; Roy, Kaushik; Ramanathan, Shriram

doi:10.1063/1.5113574

Title: Organismic materials for beyond von Neumann machines

Journal Article · Wed Jan 22 00:00:00 EST 2020 · Applied Physics Reviews

DOI:https://doi.org/10.1063/1.5113574· OSTI ID:1607862

^[1];

^[1]; Lin, Jerome ^[2]; Kalcheim, Yoav ^[3];

^[4];

^[5];

^[6]; Priya, Shashank ^[4]; Schuller, Ivan K. ^[3]; Sankaranarayanan, Subramanian K. R. S. ^[7]; Roy, Kaushik ^[1]; Ramanathan, Shriram ^[1]

Purdue Univ., West Lafayette, IN (United States)
Univ. of Chicago, IL (United States)
Univ. of California, San Diego, L Jolla, CA (United States)
Pennsylvania State Univ., University Park, PA (United States)
Argonne National Lab. (ANL), Lemont, IL (United States). Advanced Photon Source (APS)
Argonne National Lab. (ANL), Lemont, IL (United States)
Univ. of Illinois, Chicago, IL (United States); Argonne National Lab. (ANL), Lemont, IL (United States). Center for Nanoscale Materials

The elementary basis of intelligence in organisms with a central nervous system includes neurons and synapses and their complex interconnections forming neural circuits. In non-neural organisms such as slime mold with gel-like media, viscosity modulation enables adaptation to changing environments. At a larger scale, collective intelligence emerges via social interactions and feedback in animal colonies. Learning and memory are therefore multi-scale features that evolve as a result of constant interactions with the environment. There is growing interest in emulating such features of intelligence in computing machines and autonomous systems. Materials that can respond to their environment in a manner similar to organisms (referred to as "organismic materials") therefore may be of interest as hardware components in artificial intelligence machines. In this brief review, we present a class of semiconductors called correlated oxides as candidates for learning machines. The term "correlated" refers to the fact that electrons in such lattices strongly interact and the ground state is not what is predicted by classical band theory. Such materials can undergo insulator-metal transitions at near ambient conditions under external stimuli such as thermal or electrical fields, strain, and chemical doping. Depending on the mechanism driving the transition, intermediate states can be metastable with different volatilities, and the time scales of phase change can be controlled over many orders of magnitude. The change in electronic properties can be sharp or gradual, leading to digital or analog behavior. These properties enable the realization of artificial neurons and synapses and emulate the associative and non-associative learning characteristics found in various organisms. We examine microscopic properties concerning electronic and structural transitions leading to collective behavior and theoretical treatments of the ground state and dynamical response, showcasing VO₂ as a model system. Next, we briefly review algorithms designed from the plasticity demonstrated by phase changing systems. Finally, we conclude the brief review with suggestions for future research toward realizing non-von Neumann machines.

View Accepted Manuscript (DOE)

View Accepted Manuscript (Publisher)

Cite

Export

Save

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Quantum Materials for Energy Efficient Neuromorphic Computing (Q-MEEN-C); Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: US Air Force Office of Scientific Research (AFOSR); US Army Research Office (ARO); Gilbreth Fellowship; Vannevar Bush Faculty Fellowship; Center for Brain-Inspired Computing (CBRIC); Defense Advanced Research Projects Agency (DARPA); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: AC02-06CH11357; SC0019273

OSTI ID:: 1607862

Alternate ID(s):: OSTI ID: 1593183

Journal Information:: Applied Physics Reviews, Vol. 7, Issue 1; ISSN 1931-9401

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 24 works

Citation information provided by
Web of Science

References (205)

Ionic transport in hybrid lead iodide perovskite solar cells Eames, Christopher; Frost, Jarvist M.; Barnes, Piers R. F. Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms8497	journal	June 2015
Landau Theory of Charge and Spin Ordering in the Nickelates Lee, SungBin; Chen, Ru; Balents, Leon Physical Review Letters, Vol. 106, Issue 1 https://doi.org/10.1103/PhysRevLett.106.016405	journal	January 2011
Change of electronic properties on the doping-induced insulator-metal transition in ${La}_{1 - x}$ ${Sr}_{x}$ ${VO}_{3}$ Inaba, F.; Arima, T.; Ishikawa, T. Physical Review B, Vol. 52, Issue 4 https://doi.org/10.1103/PhysRevB.52.R2221	journal	July 1995
Deep learning LeCun, Yann; Bengio, Yoshua; Hinton, Geoffrey Nature, Vol. 521, Issue 7553 https://doi.org/10.1038/nature14539	journal	May 2015
Substrate-induced disorder in V ₂ O ₃ thin films grown on annealed c -plane sapphire substrates Brockman, J.; Samant, M. G.; Roche, K. P. Applied Physics Letters, Vol. 101, Issue 5 https://doi.org/10.1063/1.4742160	journal	July 2012
Deviation from bulk in the pressure-temperature phase diagram of $V_{2} O_{3}$ thin films Valmianski, I.; Ramirez, Juan Gabriel; Urban, C. Physical Review B, Vol. 95, Issue 15 https://doi.org/10.1103/PhysRevB.95.155132	journal	April 2017
Physics of Ultrathin Films and Heterostructures of Rare-Earth Nickelates Middey, S.; Chakhalian, J.; Mahadevan, P. Annual Review of Materials Research, Vol. 46, Issue 1 https://doi.org/10.1146/annurev-matsci-070115-032057	journal	July 2016
Quantitative Observation of Threshold Defect Behavior in Memristive Devices with Operando X-ray Microscopy Liu, Huajun; Dong, Yongqi; Cherukara, Mathew J. ACS Nano, Vol. 12, Issue 5 https://doi.org/10.1021/acsnano.8b02028	journal	April 2018
Role of Thermal Heating on the Voltage Induced Insulator-Metal Transition in ${VO}_{2}$ Zimmers, A.; Aigouy, L.; Mortier, M. Physical Review Letters, Vol. 110, Issue 5 https://doi.org/10.1103/PhysRevLett.110.056601	journal	January 2013
Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor Kim, Bong-Jun; Lee, Yong Wook; Chae, Byung-Gyu Applied Physics Letters, Vol. 90, Issue 2 https://doi.org/10.1063/1.2431456	journal	January 2007
Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memory Huang, Teng-Han; Yang, Po-Kang; Chang, Wen-Yuan Journal of Materials Chemistry C, Vol. 1, Issue 45 https://doi.org/10.1039/c3tc31542h	journal	January 2013
Wafer-scale growth of VO2 thin films using a combinatorial approach Zhang, Hai-Tian; Zhang, Lei; Mukherjee, Debangshu Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms9475	journal	October 2015
Non-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe3O4/PMN-PT (011) Liu, Ming; Hoffman, Jason; Wang, Jing Scientific Reports, Vol. 3, Issue 1 https://doi.org/10.1038/srep01876	journal	May 2013
Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO ₂ Kumar, Suhas; Pickett, Matthew D.; Strachan, John Paul Advanced Materials, Vol. 25, Issue 42 https://doi.org/10.1002/adma.201302046	journal	July 2013
A climbing image nudged elastic band method for finding saddle points and minimum energy paths Henkelman, Graeme; Uberuaga, Blas P.; Jónsson, Hannes The Journal of Chemical Physics, Vol. 113, Issue 22, p. 9901-9904 https://doi.org/10.1063/1.1329672	journal	December 2000
Neuromorphic Silicon Neuron Circuits Indiveri, Giacomo; Linares-Barranco, Bernabé; Hamilton, Tara Julia Frontiers in Neuroscience, Vol. 5 https://doi.org/10.3389/fnins.2011.00073	journal	January 2011
Evolution of electronic structure across the rare-earth RNiO3 series Freeland, John W.; van Veenendaal, Michel; Chakhalian, Jak Journal of Electron Spectroscopy and Related Phenomena, Vol. 208 https://doi.org/10.1016/j.elspec.2015.07.006	journal	April 2016
Limits on vanadium oxide Mott metal–insulator transition field-effect transistors Hormoz, S.; Ramanathan, S. Solid-State Electronics, Vol. 54, Issue 6 https://doi.org/10.1016/j.sse.2010.01.006	journal	June 2010
Resistive switching in memristive electrochemical metallization devices Dirkmann, Sven; Mussenbrock, Thomas AIP Advances, Vol. 7, Issue 6 https://doi.org/10.1063/1.4985443	journal	June 2017
Quantifying electronic correlation strength in a complex oxide: A combined DMFT and ARPES study of ${LaNiO}_{3}$ Nowadnick, E. A.; Ruf, J. P.; Park, H. Physical Review B, Vol. 92, Issue 24 https://doi.org/10.1103/PhysRevB.92.245109	journal	December 2015
The Memristive Properties of a Single VO 2 Nanowire with Switching Controlled by Self-Heating Bae, Sung-Hwan; Lee, Sangmin; Koo, Hyun Advanced Materials, Vol. 25, Issue 36 https://doi.org/10.1002/adma.201302511	journal	August 2013
On the triggering mechanism for the metal–insulator transition in thin film VO2 devices: electric field versus thermal effects Gopalakrishnan, Gokul; Ruzmetov, Dmitry; Ramanathan, Shriram Journal of Materials Science, Vol. 44, Issue 19 https://doi.org/10.1007/s10853-009-3442-7	journal	October 2009
Tracking the insulator-to-metal phase transition in VO ₂ with few-femtosecond extreme UV transient absorption spectroscopy Jager, Marieke F.; Ott, Christian; Kraus, Peter M. Proceedings of the National Academy of Sciences, Vol. 114, Issue 36 https://doi.org/10.1073/pnas.1707602114	journal	August 2017
Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures Heo, Seungyang; Oh, Chadol; Eom, Man Jin Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep22228	journal	February 2016
Strongly correlated perovskite lithium ion shuttles Sun, Yifei; Kotiuga, Michele; Lim, Dawgen Proceedings of the National Academy of Sciences, Vol. 115, Issue 39 https://doi.org/10.1073/pnas.1805029115	journal	August 2018
Electronic Specific Heat of Metallic Ti-Doped $V_{2}$ $O_{3}$ McWhan, D. B.; Remeika, J. P.; Rice, T. M. Physical Review Letters, Vol. 27, Issue 14 https://doi.org/10.1103/PhysRevLett.27.941	journal	October 1971
Resistive Switching Behavior in Organic-Inorganic Hybrid CH ₃ NH ₃ PbI _{3 −x} Cl _x Perovskite for Resistive Random Access Memory Devices Yoo, Eun Ji; Lyu, Miaoqiang; Yun, Jung-Ho Advanced Materials, Vol. 27, Issue 40 https://doi.org/10.1002/adma.201502889	journal	August 2015
Flexible Hybrid Organic–Inorganic Perovskite Memory Gu, Chungwan; Lee, Jang-Sik ACS Nano, Vol. 10, Issue 5 https://doi.org/10.1021/acsnano.6b01643	journal	April 2016
Neuron Model with Simplified Memristive Ionic Channels Hegab, Almoatazbellah M.; Salem, Noha M.; Radwan, Ahmed G. International Journal of Bifurcation and Chaos, Vol. 25, Issue 06 https://doi.org/10.1142/S0218127415300177	journal	June 2015
Emerging Memory Devices for Neuromorphic Computing Upadhyay, Navnidhi K.; Jiang, Hao; Wang, Zhongrui Advanced Materials Technologies, Vol. 4, Issue 4 https://doi.org/10.1002/admt.201800589	journal	January 2019
Quasi-Two-Dimensional Halide Perovskite Single Crystal Photodetector Wang, Kai; Wu, Congcong; Yang, Dong ACS Nano, Vol. 12, Issue 5 https://doi.org/10.1021/acsnano.8b01999	journal	April 2018
TrueNorth: Design and Tool Flow of a 65 mW 1 Million Neuron Programmable Neurosynaptic Chip Akopyan, Filipp; Sawada, Jun; Cassidy, Andrew IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 34, Issue 10 https://doi.org/10.1109/TCAD.2015.2474396	journal	October 2015
Electronic excitation spectra from ab initio band-structure results for La M $O_{3}$ ( M =Cr,Mn,Fe,Co,Ni) Sarma, D. D.; Shanthi, N.; Mahadevan, Priya Physical Review B, Vol. 54, Issue 3 https://doi.org/10.1103/PhysRevB.54.1622	journal	July 1996
Rare-earth nickelates R NiO ₃ : thin films and heterostructures Catalano, S.; Gibert, M.; Fowlie, J. Reports on Progress in Physics, Vol. 81, Issue 4 https://doi.org/10.1088/1361-6633/aaa37a	journal	February 2018
Self-heating and External Strain Coupling Induced Phase Transition of VO2 Nanobeam as Single Domain Switch Hu, Bin; Zhang, Yan; Chen, Wen Advanced Materials, Vol. 23, Issue 31 https://doi.org/10.1002/adma.201101731	journal	July 2011
Electrical oscillations induced by the metal-insulator transition in VO2 Kim, Hyun-Tak; Kim, Bong-Jun; Choi, Sungyoul Journal of Applied Physics, Vol. 107, Issue 2 https://doi.org/10.1063/1.3275575	journal	January 2010
Nonequilibrium Phase Precursors during a Photoexcited Insulator-to-Metal Transition in $V_{2} O_{3}$ Singer, Andrej; Ramirez, Juan Gabriel; Valmianski, Ilya Physical Review Letters, Vol. 120, Issue 20 https://doi.org/10.1103/PhysRevLett.120.207601	journal	May 2018
Giant topological Hall effect in correlated oxide thin films Vistoli, Lorenzo; Wang, Wenbo; Sander, Anke Nature Physics, Vol. 15, Issue 1 https://doi.org/10.1038/s41567-018-0307-5	journal	October 2018
Synaptic Modifications in Cultured Hippocampal Neurons: Dependence on Spike Timing, Synaptic Strength, and Postsynaptic Cell Type Bi, Guo-qiang; Poo, Mu-ming The Journal of Neuroscience, Vol. 18, Issue 24 https://doi.org/10.1523/JNEUROSCI.18-24-10464.1998	journal	December 1998
A physical model of switching dynamics in tantalum oxide memristive devices Mickel, Patrick R.; Lohn, Andrew J.; Joon Choi, Byung Applied Physics Letters, Vol. 102, Issue 22, Article No. 223502 https://doi.org/10.1063/1.4809530	journal	June 2013
Influence of quantum confinement and strain on orbital polarization of four-layer ${LaNiO}_{3}$ superlattices: A DFT+DMFT study Park, Hyowon; Millis, Andrew J.; Marianetti, Chris A. Physical Review B, Vol. 93, Issue 23 https://doi.org/10.1103/PhysRevB.93.235109	journal	June 2016
Resistive switching and Schottky diode-like behaviors in Pt/BiFeO3/ITO devices Luo, J. M.; Chen, S. H.; Bu, S. L. Journal of Alloys and Compounds, Vol. 601 https://doi.org/10.1016/j.jallcom.2014.02.180	journal	July 2014
Development of crystal texture in Nd-lean amorphous Nd9Fe85B6 under hot deformation Liu, Yanguo; Xu, Lei; Wang, Qingfeng Applied Physics Letters, Vol. 94, Issue 17 https://doi.org/10.1063/1.3126444	journal	April 2009
On the Origin of Low-Resistance State Retention Failure in HfO 2 -Based RRAM and Impact of Doping/Alloying Traore, Boubacar; Blaise, Philippe; Vianello, Elisa IEEE Transactions on Electron Devices, Vol. 62, Issue 12 https://doi.org/10.1109/TED.2015.2490545	journal	December 2015
Effect of disorder on the metal-insulator transition of vanadium oxides: Local versus global effects Ramirez, Juan Gabriel; Saerbeck, Thomas; Wang, Siming Physical Review B, Vol. 91, Issue 20 https://doi.org/10.1103/PhysRevB.91.205123	journal	May 2015
Flexible All-Inorganic Perovskite CsPbBr 3 Nonvolatile Memory Device Liu, Dongjue; Lin, Qiqi; Zang, Zhigang ACS Applied Materials & Interfaces, Vol. 9, Issue 7 https://doi.org/10.1021/acsami.6b15149	journal	February 2017
Resistive switching and conductance quantization in Ag/SiO 2 /indium tin oxide resistive memories Gao, S.; Chen, C.; Zhai, Z. Applied Physics Letters, Vol. 105, Issue 6 https://doi.org/10.1063/1.4893277	journal	August 2014
A Vision for All-Spin Neural Networks: A Device to System Perspective Sengupta, Abhronil; Roy, Kaushik IEEE Transactions on Circuits and Systems I: Regular Papers, Vol. 63, Issue 12 https://doi.org/10.1109/TCSI.2016.2615312	journal	December 2016
Bio-inspired computer vision: Towards a synergistic approach of artificial and biological vision Medathati, N. V. Kartheek; Neumann, Heiko; Masson, Guillaume S. Computer Vision and Image Understanding, Vol. 150 https://doi.org/10.1016/j.cviu.2016.04.009	journal	September 2016
Evidence of a gate-tunable Mott insulator in a trilayer graphene moiré superlattice Chen, Guorui; Jiang, Lili; Wu, Shuang Nature Physics, Vol. 15, Issue 3 https://doi.org/10.1038/s41567-018-0387-2	journal	January 2019
Multistate Memory Devices Based on Free-standing VO2/TiO2 Microstructures Driven by Joule Self-Heating Pellegrino, Luca; Manca, Nicola; Kanki, Teruo Advanced Materials, Vol. 24, Issue 21 https://doi.org/10.1002/adma.201104669	journal	April 2012
Perovskite nickelates as bio-electronic interfaces Zhang, Hai-Tian; Zuo, Fan; Li, Feiran Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-09660-6	journal	April 2019
Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations Menzel, Stephan; Kaupmann, Philip; Waser, Rainer RWTH Aachen University https://doi.org/10.18154/rwth-2015-04662	text	January 2015
Brainless but Multi-Headed: Decision Making by the Acellular Slime Mould Physarum polycephalum Beekman, Madeleine; Latty, Tanya Journal of Molecular Biology, Vol. 427, Issue 23 https://doi.org/10.1016/j.jmb.2015.07.007	journal	November 2015
Importance of Electronic Correlations and Unusual Excitonic Effects in Formamidinium Lead Halide Perovskites Whitcher, T. J.; Zhu, J. -X.; Chi, X. Physical Review X, Vol. 8, Issue 2 https://doi.org/10.1103/PhysRevX.8.021034	journal	May 2018
Micrometer x-ray diffraction study of ${VO}_{2}$ films: Separation between metal-insulator transition and structural phase transition Kim, Bong-Jun; Lee, Yong Wook; Choi, Sungyeoul Physical Review B, Vol. 77, Issue 23 https://doi.org/10.1103/PhysRevB.77.235401	journal	June 2008
In-situ oxygen x-ray absorption spectroscopy investigation of the resistance modulation mechanism in LiNbO ₂ memristors Greenlee, Jordan D.; Petersburg, Cole F.; Laws Calley, W. Applied Physics Letters, Vol. 100, Issue 18 https://doi.org/10.1063/1.4709422	journal	April 2012
Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO 2 resistive switching memory Chand, Umesh; Huang, Chun-Yang; Jieng, Jheng-Hong Applied Physics Letters, Vol. 106, Issue 15 https://doi.org/10.1063/1.4918679	journal	April 2015
Dynamical Singlets and Correlation-Assisted Peierls Transition in ${V O}_{2}$ Biermann, S.; Poteryaev, A.; Lichtenstein, A. I. Physical Review Letters, Vol. 94, Issue 2 https://doi.org/10.1103/PhysRevLett.94.026404	journal	January 2005
Neuromorphic Electronic Circuits for Building Autonomous Cognitive Systems Chicca, Elisabetta; Stefanini, Fabio; Bartolozzi, Chiara Proceedings of the IEEE, Vol. 102, Issue 9 https://doi.org/10.1109/JPROC.2014.2313954	journal	September 2014
Slime mold uses an externalized spatial "memory" to navigate in complex environments Reid, C. R.; Latty, T.; Dussutour, A. Proceedings of the National Academy of Sciences, Vol. 109, Issue 43 https://doi.org/10.1073/pnas.1215037109	journal	October 2012
Subthreshold firing in Mott nanodevices del Valle, Javier; Salev, Pavel; Tesler, Federico Nature, Vol. 569, Issue 7756 https://doi.org/10.1038/s41586-019-1159-6	journal	May 2019
Electric-Field-Modulated Nonvolatile Resistance Switching in VO 2 /PMN-PT(111) Heterostructures Zhi, Bowen; Gao, Guanyin; Xu, Haoran ACS Applied Materials & Interfaces, Vol. 6, Issue 7 https://doi.org/10.1021/am405767q	journal	March 2014
Effects of transition metals incorporated into perovskite crystals on the electronic structures and magnetic properties by first-principles calculation Suzuki, Atsushi; Oku, Takeo Heliyon, Vol. 4, Issue 8 https://doi.org/10.1016/j.heliyon.2018.e00755	journal	August 2018
Rapid erasure of hippocampal memory following inhibition of dentate gyrus granule cells Madroñal, Noelia; Delgado-García, José M.; Fernández-Guizán, Azahara Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms10923	journal	March 2016
Hippocampal neurogenesis and forgetting Frankland, Paul W.; Köhler, Stefan; Josselyn, Sheena A. Trends in Neurosciences, Vol. 36, Issue 9 https://doi.org/10.1016/j.tins.2013.05.002	journal	September 2013
Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition Yang, Mengmeng; Yang, Yuanjun Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep23119	journal	March 2016
Beyond electrostatic modification: design and discovery of functional oxide phases via ionic-electronic doping Zhang, Hai-Tian; Zhang, Zhen; Zhou, Hua Advances in Physics: X, Vol. 4, Issue 1 https://doi.org/10.1080/23746149.2018.1523686	journal	October 2018
Unusual defect physics in CH ₃ NH ₃ PbI ₃ perovskite solar cell absorber Yin, Wan-Jian; Shi, Tingting; Yan, Yanfa Applied Physics Letters, Vol. 104, Issue 6 https://doi.org/10.1063/1.4864778	journal	February 2014
Reversible Control of Co Magnetism by Voltage-Induced Oxidation Bi, Chong; Liu, Yaohua; Newhouse-Illige, T. Physical Review Letters, Vol. 113, Issue 26 https://doi.org/10.1103/PhysRevLett.113.267202	journal	December 2014
Another mechanism for the insulator-metal transition observed in Mott insulators Gavriliuk, Alexander G.; Struzhkin, Viktor V.; Lyubutin, Igor S. Physical Review B, Vol. 77, Issue 15 https://doi.org/10.1103/PhysRevB.77.155112	journal	April 2008
Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing Kumar, Suhas; Strachan, John Paul; Williams, R. Stanley Nature, Vol. 548, Issue 7667 https://doi.org/10.1038/nature23307	journal	August 2017
A Vanadium Dioxide Metamaterial Disengaged from Insulator-to-Metal Transition Jeong, Young-Gyun; Han, Sanghoon; Rhie, Jiyeah Nano Letters, Vol. 15, Issue 10 https://doi.org/10.1021/acs.nanolett.5b02361	journal	September 2015
Voltage Control of Metal-insulator Transition and Non-volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures Nan, Tianxiang; Liu, Ming; Ren, Wei Scientific Reports, Vol. 4, Issue 1 https://doi.org/10.1038/srep05931	journal	August 2014
Metal-Insulator Transitions in Pure and Doped $V_{2}$ $O_{3}$ McWhan, D. B.; Menth, A.; Remeika, J. P. Physical Review B, Vol. 7, Issue 5 https://doi.org/10.1103/PhysRevB.7.1920	journal	March 1973
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges Waser, Rainer; Dittmann, Regina; Staikov, Georgi Advanced Materials, Vol. 21, Issue 25-26, p. 2632-2663 https://doi.org/10.1002/adma.200900375	journal	July 2009
Breakdown of the Mott-Hubbard State in ${Fe}_{2} O_{3}$ : A First-Order Insulator-Metal Transition with Collapse of Magnetism at 50 GPa Pasternak, M. P.; Rozenberg, G. Kh.; Machavariani, G. Yu. Physical Review Letters, Vol. 82, Issue 23 https://doi.org/10.1103/PhysRevLett.82.4663	journal	June 1999
Enhanced Bifunctional Oxygen Catalysis in Strained LaNiO ₃ Perovskites Petrie, Jonathan R.; Cooper, Valentino R.; Freeland, John W. Journal of the American Chemical Society, Vol. 138, Issue 8 https://doi.org/10.1021/jacs.5b11713	journal	February 2016
A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO 2 /Si-n + -based RRAMs Aldana, S.; García-Fernández, P.; Rodríguez-Fernández, Alberto Journal of Physics D: Applied Physics, Vol. 50, Issue 33 https://doi.org/10.1088/1361-6463/aa7939	journal	July 2017
Dynamic strain control of the metal–insulator transition and non-volatile resistance switching in (0 1 0) VO2/(1 1 1) Pb(Mg1/3Nb2/3)0.7Ti0.3O3 epitaxial heterostructures Hong, Bin; Yang, Yuanjun; Hu, Kai Materials Letters, Vol. 196 https://doi.org/10.1016/j.matlet.2017.03.014	journal	June 2017
A quantitative description of membrane current and its application to conduction and excitation in nerve Hodgkin, A. L.; Huxley, A. F. The Journal of Physiology, Vol. 117, Issue 4 https://doi.org/10.1113/jphysiol.1952.sp004764	journal	August 1952
Positive-bias gate-controlled metal–insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics Yajima, Takeaki; Nishimura, Tomonori; Toriumi, Akira Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms10104	journal	December 2015
Phase-field model of insulator-to-metal transition in VO 2 under an electric field Shi, Yin; Chen, Long-Qing Physical Review Materials, Vol. 2, Issue 5 https://doi.org/10.1103/PhysRevMaterials.2.053803	journal	May 2018
Atomistic simulations of electrochemical metallization cells: mechanisms of ultra-fast resistance switching in nanoscale devices Onofrio, Nicolas; Guzman, David; Strachan, Alejandro Nanoscale, Vol. 8, Issue 29 https://doi.org/10.1039/C6NR01335J	journal	January 2016
Neuromorphic silicon neuron circuits Indiveri, Giacomo; Linares-Barranco, Bernabé; Hamilton, Tara J. ETH Zurich https://doi.org/10.3929/ethz-b-000045428	text	January 2011
Biological plausibility and stochasticity in scalable VO2 active memristor neurons Yi, Wei; Tsang, Kenneth K.; Lam, Stephen K. Nature Communications, Vol. 9, Issue 1 https://doi.org/10.1038/s41467-018-07052-w	journal	November 2018
Distinct Electronic Structure of the Electrolyte Gate-Induced Conducting Phase in Vanadium Dioxide Revealed by High-Energy Photoelectron Spectroscopy Karel, Julie; ViolBarbosa, Carlos E.; Kiss, Janos ACS Nano, Vol. 8, Issue 6 https://doi.org/10.1021/nn501724q	journal	May 2014
Decoupling of Structural and Electronic Phase Transitions in ${VO}_{2}$ Tao, Zhensheng; Han, Tzong-Ru T.; Mahanti, Subhendra D. Physical Review Letters, Vol. 109, Issue 16 https://doi.org/10.1103/PhysRevLett.109.166406	journal	October 2012
Mono-crystalline Perovskite Photovoltaics toward Ultrahigh Efficiency? Wang, Kai; Yang, Dong; Wu, Congcong Joule, Vol. 3, Issue 2 https://doi.org/10.1016/j.joule.2018.11.009	journal	February 2019
Colossal resistance switching and band gap modulation in a perovskite nickelate by electron doping Shi, Jian; Zhou, You; Ramanathan, Shriram Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms5860	journal	September 2014
A Self-Consistent, Semiclassical Electrothermal Modeling Framework for Mott Devices Karda, Kamal; Mouli, Chandra; Ramanathan, Shriram IEEE Transactions on Electron Devices, Vol. 65, Issue 5 https://doi.org/10.1109/TED.2018.2817604	journal	May 2018
Electronic Conduction of Magnetite (Fe3O4) and its Transition Point at Low Temperatures Verwey, E. J. W. Nature, Vol. 144, Issue 3642 https://doi.org/10.1038/144327b0	journal	August 1939
A Review of Current Neuromorphic Approaches for Vision, Auditory, and Olfactory Sensors Vanarse, Anup; Osseiran, Adam; Rassau, Alexander Frontiers in Neuroscience, Vol. 10 https://doi.org/10.3389/fnins.2016.00115	journal	March 2016
Machine Learning Classical Interatomic Potentials for Molecular Dynamics from First-Principles Training Data Chan, Henry; Narayanan, Badri; Cherukara, Mathew J. The Journal of Physical Chemistry C, Vol. 123, Issue 12 https://doi.org/10.1021/acs.jpcc.8b09917	journal	January 2019
Dynamically tracking the joule heating effect on the voltage induced metal-insulator transition in VO 2 crystal film Liao, G. M.; Chen, S.; Fan, L. L. AIP Advances, Vol. 6, Issue 4 https://doi.org/10.1063/1.4948311	journal	April 2016
A quantitative description of membrane current and its application to conduction and excitation in nerve Hodgkin, A. L.; Huxley, A. F. Bulletin of Mathematical Biology, Vol. 52, Issue 1-2 https://doi.org/10.1007/bf02459568	journal	January 1990
Novel Bimorphological Anisotropic Bulk Nanocomposite Materials with High Energy Products Li, Xiaohong; Lou, Li; Song, Wenpeng Advanced Materials, Vol. 29, Issue 16 https://doi.org/10.1002/adma.201606430	journal	February 2017
Memristive model of amoeba learning Pershin, Yuriy V.; La Fontaine, Steven; Di Ventra, Massimiliano Physical Review E, Vol. 80, Issue 2 https://doi.org/10.1103/PhysRevE.80.021926	journal	August 2009
On Having No Head: Cognition throughout Biological Systems Baluška, František; Levin, Michael Frontiers in Psychology, Vol. 7 https://doi.org/10.3389/fpsyg.2016.00902	journal	June 2016
Extremely Low Operating Current Resistive Memory Based on Exfoliated 2D Perovskite Single Crystals for Neuromorphic Computing Tian, He; Zhao, Lianfeng; Wang, Xuefeng ACS Nano, Vol. 11, Issue 12 https://doi.org/10.1021/acsnano.7b05726	journal	October 2016
Joule-heat-driven high-efficiency electronic-phase switching in freestanding VO 2 /TiO 2 nanowires Higuchi, Yoshiyuki; Kanki, Teruo; Tanaka, Hidekazu Applied Physics Express, Vol. 10, Issue 3 https://doi.org/10.7567/APEX.10.033201	journal	February 2017
Strongly Correlated Materials: Insights From Dynamical Mean-Field Theory Kotliar, Gabriel; Vollhardt, Dieter Physics Today, Vol. 57, Issue 3 https://doi.org/10.1063/1.1712502	journal	March 2004
Pseudohalide-Induced 2D (CH 3 NH 3 ) 2 PbI 2 (SCN) 2 Perovskite for Ternary Resistive Memory with High Performance Cheng, Xue-Feng; Hou, Xiang; Zhou, Jin Small, Vol. 14, Issue 12 https://doi.org/10.1002/smll.201703667	journal	February 2018
Calibration of the DFT/GGA+U Method for Determination of Reduction Energies for Transition and Rare Earth Metal Oxides of Ti, V, Mo, and Ce Lutfalla, Suzanne; Shapovalov, Vladimir; Bell, Alexis T. Journal of Chemical Theory and Computation, Vol. 7, Issue 7 https://doi.org/10.1021/ct200202g	journal	June 2011
Doping- and pressure-induced change of electrical and magnetic properties in the Mott-Hubbard insulator ${LaTiO}_{3}$ Okada, Y.; Arima, T.; Tokura, Y. Physical Review B, Vol. 48, Issue 13 https://doi.org/10.1103/PhysRevB.48.9677	journal	October 1993
Continuous Tuning of Phase Transition Temperature in VO ₂ Thin Films on c -Cut Sapphire Substrates via Strain Variation Jian, Jie; Wang, Xuejing; Li, Leigang ACS Applied Materials & Interfaces, Vol. 9, Issue 6 https://doi.org/10.1021/acsami.6b13217	journal	February 2017
Effect of ultraviolet irradiation on electrical resistance and phase transition characteristics of thin film vanadium oxide Ko, Changhyun; Ramanathan, Shriram Journal of Applied Physics, Vol. 103, Issue 10 https://doi.org/10.1063/1.2931006	journal	May 2008
Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations Menzel, Stephan; Kaupmann, Philip; Waser, Rainer Nanoscale, Vol. 7, Issue 29 https://doi.org/10.1039/C5NR02258D	journal	January 2015
A Strategy to Design High-Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials Hwang, Bohee; Lee, Jang-Sik Advanced Materials, Vol. 29, Issue 29 https://doi.org/10.1002/adma.201701048	journal	May 2017
High-efficiency voltage oscillation in VO2 planer-type junctions with infinite negative differential resistance Sakai, Joe Journal of Applied Physics, Vol. 103, Issue 10 https://doi.org/10.1063/1.2930959	journal	May 2008
Electrically Driven Insulator–Metal Transition-Based Devices—Part II: Transient Characteristics Lin, Jianqiang; Ramanathan, Shriram; Guha, Supratik IEEE Transactions on Electron Devices, Vol. 65, Issue 9 https://doi.org/10.1109/TED.2018.2859188	journal	September 2018
Transient dynamics of NbO _x threshold switches explained by Poole-Frenkel based thermal feedback mechanism Wang, Ziwen; Kumar, Suhas; Nishi, Yoshio Applied Physics Letters, Vol. 112, Issue 19 https://doi.org/10.1063/1.5027152	journal	May 2018
Photoinduced metallic state in VO[sub 2] proved by the terahertz pump-probe spectroscopy Nakajima, M.; Takubo, N.; Hiroi, Z. Applied Physics Letters, Vol. 92, Issue 1 https://doi.org/10.1063/1.2830664	journal	January 2008
A reconfigurable on-line learning spiking neuromorphic processor comprising 256 neurons and 128K synapses Ning, Qiao,; Hesham, Mostafa,; Federico, Corradi, ETH Zurich https://doi.org/10.3929/ethz-b-000100988	text	January 2015
High dielectric permittivity and hole-doping effect in La 1 − x Sr x FeO 3 Chern, G.; Hsieh, W. K.; Tai, M. F. Physical Review B, Vol. 58, Issue 3 https://doi.org/10.1103/PhysRevB.58.1252	journal	July 1998
Origin of the current-driven breakdown in vanadium oxides: Thermal versus electronic Valmianski, I.; Wang, P. Y.; Wang, S. Physical Review B, Vol. 98, Issue 19 https://doi.org/10.1103/PhysRevB.98.195144	journal	November 2018
Molecular Dynamics Study of the Switching Mechanism of Carbon-Based Resistive Memory He, Yu; Zhang, Jinyu; Guan, Ximeng IEEE Transactions on Electron Devices, Vol. 57, Issue 12 https://doi.org/10.1109/TED.2010.2076375	journal	December 2010
Crystal Structure and Metal–Insulator Transition of La1−xSrxCoO3 Mineshige, Atsushi; Inaba, Minoru; Yao, Takeshi Journal of Solid State Chemistry, Vol. 121, Issue 2 https://doi.org/10.1006/jssc.1996.0058	journal	February 1996
Atomic origin of ultrafast resistance switching in nanoscale electrometallization cells Onofrio, Nicolas; Guzman, David; Strachan, Alejandro Nature Materials, Vol. 14, Issue 4 https://doi.org/10.1038/nmat4221	journal	March 2015
A reconfigurable on-line learning spiking neuromorphic processor comprising 256 neurons and 128K synapses Qiao, Ning; Mostafa, Hesham; Corradi, Federico Frontiers in Neuroscience, Vol. 9 https://doi.org/10.3389/fnins.2015.00141	journal	April 2015
Tuning the conductivity of vanadium dioxide films on silicon by swift heavy ion irradiation Hofsäss, H.; Ehrhardt, P.; Gehrke, H. -G. AIP Advances, Vol. 1, Issue 3 https://doi.org/10.1063/1.3646527	journal	September 2011
Robust Coupling between Structural and Electronic Transitions in a Mott Material Kalcheim, Yoav; Butakov, Nikita; Vargas, Nicolas M. Physical Review Letters, Vol. 122, Issue 5 https://doi.org/10.1103/PhysRevLett.122.057601	journal	February 2019
Electrically Induced Multiple Metal-Insulator Transitions in Oxide Nanodevices del Valle, Javier; Kalcheim, Yoav; Trastoy, Juan Physical Review Applied, Vol. 8, Issue 5 https://doi.org/10.1103/PhysRevApplied.8.054041	journal	November 2017
Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing Rao, Feng; Ding, Keyuan; Zhou, Yuxing Science, Vol. 358, Issue 6369 https://doi.org/10.1126/science.aao3212	journal	November 2017
Solving the Towers of Hanoi - how an amoeboid organism efficiently constructs transport networks Reid, C. R.; Beekman, M. Journal of Experimental Biology, Vol. 216, Issue 9 https://doi.org/10.1242/jeb.081158	journal	January 2013
Frontiers in the Growth of Complex Oxide Thin Films: Past, Present, and Future of Hybrid MBE Brahlek, Matthew; Gupta, Arnab Sen; Lapano, Jason Advanced Functional Materials, Vol. 28, Issue 9 https://doi.org/10.1002/adfm.201702772	journal	December 2017
Switching dynamics of TaO x -based threshold switching devices Goodwill, Jonathan M.; Gala, Darshil K.; Bain, James A. Journal of Applied Physics, Vol. 123, Issue 11 https://doi.org/10.1063/1.5020070	journal	March 2018
Physical origins of current and temperature controlled negative differential resistances in NbO2 Kumar, Suhas; Wang, Ziwen; Davila, Noraica Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/s41467-017-00773-4	journal	September 2017
Metal-insulator transitions in ${NdNiO}_{3}$ thin films Catalan, G.; Bowman, R. M.; Gregg, J. M. Physical Review B, Vol. 62, Issue 12 https://doi.org/10.1103/PhysRevB.62.7892	journal	September 2000
Large-scale neuromorphic computing systems Furber, Steve Journal of Neural Engineering, Vol. 13, Issue 5 https://doi.org/10.1088/1741-2560/13/5/051001	journal	August 2016
Neuromorphic computing using non-volatile memory Burr, Geoffrey W.; Shelby, Robert M.; Sebastian, Abu Advances in Physics: X, Vol. 2, Issue 1 https://doi.org/10.1080/23746149.2016.1259585	journal	October 2016
Habituation based synaptic plasticity and organismic learning in a quantum perovskite Zuo, Fan; Panda, Priyadarshini; Kotiuga, Michele Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/s41467-017-00248-6	journal	August 2017
Joule Heating-Induced Metal–Insulator Transition in Epitaxial VO ₂ /TiO ₂ Devices Li, Dasheng; Sharma, Abhishek A.; Gala, Darshil K. ACS Applied Materials & Interfaces, Vol. 8, Issue 20 https://doi.org/10.1021/acsami.6b03501	journal	May 2016
Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application Wang, Lin; Liao, Wugang; Wong, Swee Liang Advanced Functional Materials, Vol. 29, Issue 25 https://doi.org/10.1002/adfm.201901106	journal	April 2019
Progress in perovskite nickelate research Catalan, G. Phase Transitions, Vol. 81, Issue 7-8 https://doi.org/10.1080/01411590801992463	journal	July 2008
Perovskite nickelates as electric-field sensors in salt water Zhang, Zhen; Schwanz, Derek; Narayanan, Badri Nature, Vol. 553, Issue 7686 https://doi.org/10.1038/nature25008	journal	December 2017
Threshold switching and electrical self-oscillation in niobium oxide films Liu, Xinjun; Li, Shuai; Nandi, Sanjoy Kumar Journal of Applied Physics, Vol. 120, Issue 12 https://doi.org/10.1063/1.4963288	journal	September 2016
Metal–insulator transition of VO2 thin films grown on TiO2 (001) and (110) substrates Muraoka, Y.; Hiroi, Z. Applied Physics Letters, Vol. 80, Issue 4 https://doi.org/10.1063/1.1446215	journal	January 2002
Hodgkin–Huxley axon is made of Memristors Chua, Leon; Sbitnev, Valery; Kim, Hyongsuk International Journal of Bifurcation and Chaos, Vol. 22, Issue 03 https://doi.org/10.1142/S021812741230011X	journal	March 2012
Spatially resolved TiOx phases in switched RRAM devices using soft X-ray spectromicroscopy Carta, D.; Hitchcock, A. P.; Guttmann, P. Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep21525	journal	February 2016
Total energy calculations using DFT+DMFT: Computing the pressure phase diagram of the rare earth nickelates Park, Hyowon; Millis, Andrew J.; Marianetti, Chris A. Physical Review B, Vol. 89, Issue 24 https://doi.org/10.1103/PhysRevB.89.245133	journal	June 2014
Core Level Spectroscopy of Solids de Groot, Frank; Kotani, Akio CRC Press https://doi.org/10.1201/9781420008425	book	January 2008
Opportunities in vanadium-based strongly correlated electron systems Brahlek, Matthew; Zhang, Lei; Lapano, Jason MRS Communications, Vol. 7, Issue 1 https://doi.org/10.1557/mrc.2017.2	journal	February 2017
Magneto-ionic control of magnetism using a solid-state proton pump Tan, Aik Jun; Huang, Mantao; Avci, Can Onur Nature Materials, Vol. 18, Issue 1 https://doi.org/10.1038/s41563-018-0211-5	journal	November 2018
Carrier localization in perovskite nickelates from oxygen vacancies Kotiuga, Michele; Zhang, Zhen; Li, Jiarui Proceedings of the National Academy of Sciences, Vol. 116, Issue 44 https://doi.org/10.1073/pnas.1910490116	journal	October 2019
Influence of strain on the electronic properties of epitaxial V2O3 thin films Schuler, H.; Klimm, S.; Weissmann, G. Thin Solid Films, Vol. 299, Issue 1-2 https://doi.org/10.1016/S0040-6090(96)09399-6	journal	May 1997
Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide Brockman, Justin S.; Gao, Li; Hughes, Brian Nature Nanotechnology, Vol. 9, Issue 6 https://doi.org/10.1038/nnano.2014.71	journal	April 2014
Organolead Halid Perovskites: Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching (Adv. Mater. 31/2016) Choi, Jaeho; Park, Sunghak; Lee, Joohee Advanced Materials, Vol. 28, Issue 31 https://doi.org/10.1002/adma.201670211	journal	August 2016
Role of joule heating effect and bulk-surface phases in voltage-driven metal-insulator transition in VO 2 crystal Simon Mun, Bongjin; Yoon, Joonseok; Mo, Sung-Kwan Applied Physics Letters, Vol. 103, Issue 6 https://doi.org/10.1063/1.4817727	journal	August 2013
Origin of J – V Hysteresis in Perovskite Solar Cells Chen, Bo; Yang, Mengjin; Priya, Shashank The Journal of Physical Chemistry Letters, Vol. 7, Issue 5 https://doi.org/10.1021/acs.jpclett.6b00215	journal	February 2016
ASP: Learning to Forget With Adaptive Synaptic Plasticity in Spiking Neural Networks Panda, Priyadarshini; Allred, Jason M.; Ramanathan, Shriram IEEE Journal on Emerging and Selected Topics in Circuits and Systems, Vol. 8, Issue 1 https://doi.org/10.1109/JETCAS.2017.2769684	journal	March 2018
Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodes Baeumer, Christoph; Schmitz, Christoph; Marchewka, Astrid Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms12398	journal	August 2016
Amoebae Anticipate Periodic Events Saigusa, Tetsu; Tero, Atsushi; Nakagaki, Toshiyuki Physical Review Letters, Vol. 100, Issue 1 https://doi.org/10.1103/PhysRevLett.100.018101	journal	January 2008
Continual lifelong learning with neural networks: A review Parisi, German I.; Kemker, Ronald; Part, Jose L. Neural Networks, Vol. 113 https://doi.org/10.1016/j.neunet.2019.01.012	journal	May 2019
Sequential insulator-metal-insulator phase transitions of V O 2 triggered by hydrogen doping Chen, Shi; Wang, Zhaowu; Fan, Lele Physical Review B, Vol. 96, Issue 12 https://doi.org/10.1103/PhysRevB.96.125130	journal	September 2017
Active Optical Metasurfaces Based on Defect-Engineered Phase-Transition Materials Rensberg, Jura; Zhang, Shuyan; Zhou, You Nano Letters, Vol. 16, Issue 2 https://doi.org/10.1021/acs.nanolett.5b04122	journal	January 2016
Vanadium Dioxide Circuits Emulate Neurological Disorders Lin, Jianqiang; Guha, Supratik; Ramanathan, Shriram Frontiers in Neuroscience, Vol. 12 https://doi.org/10.3389/fnins.2018.00856	journal	November 2018
Filling dependence of electronic properties on the verge of metal–Mott-insulator transition in ${Sr}_{1 - x}$ ${La}_{x}$ ${TiO}_{3}$ Tokura, Y.; Taguchi, Y.; Okada, Y. Physical Review Letters, Vol. 70, Issue 14 https://doi.org/10.1103/PhysRevLett.70.2126	journal	April 1993
Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor Kim, Sungho; Choi, ShinHyun; Lu, Wei ACS Nano, Vol. 8, Issue 3 https://doi.org/10.1021/nn405827t	journal	February 2014
GGA-1/2 self-energy correction for accurate band structure calculations: the case of resistive switching oxides Yuan, Jun-Hui; Chen, Qi; Fonseca, Leonardo R. C. Journal of Physics Communications, Vol. 2, Issue 10 https://doi.org/10.1088/2399-6528/aade7e	journal	October 2018
Habituation in non-neural organisms: evidence from slime moulds Boisseau, Romain P.; Vogel, David; Dussutour, Audrey Proceedings of the Royal Society B: Biological Sciences, Vol. 283, Issue 1829 https://doi.org/10.1098/rspb.2016.0446	journal	April 2016
Giant switchable photovoltaic effect in organometal trihalide perovskite devices Xiao, Zhengguo; Yuan, Yongbo; Shao, Yuchuan Nature Materials, Vol. 14, Issue 2 https://doi.org/10.1038/nmat4150	journal	December 2014
Characterizing a strain-driven phase transition in VO2 Kikuzuki, T.; Lippmaa, M. Applied Physics Letters, Vol. 96, Issue 13 https://doi.org/10.1063/1.3380599	journal	March 2010
Wafer-scale reliable switching memory based on 2-dimensional layered organic–inorganic halide perovskite Seo, Ja-Young; Choi, Jaeho; Kim, Huo-Seon Nanoscale, Vol. 9, Issue 40 https://doi.org/10.1039/C7NR05582J	journal	January 2017
Molecular Beam Epitaxial Growth of Topological Insulators Chen, Xi; Ma, Xu-Cun; He, Ke Advanced Materials, Vol. 23, Issue 9 https://doi.org/10.1002/adma.201003855	journal	March 2011
Novel Electronic Behavior Driving ${NdNiO}_{3}$ Metal-Insulator Transition Upton, M. H.; Choi, Yongseong; Park, Hyowon Physical Review Letters, Vol. 115, Issue 3 https://doi.org/10.1103/PhysRevLett.115.036401	journal	July 2015
Systematics in the metal-insulator transition temperatures in vanadium oxides Fisher, B.; Genossar, J.; Reisner, G. M. Solid State Communications, Vol. 226 https://doi.org/10.1016/j.ssc.2015.10.015	journal	January 2016
Large epitaxial bi-axial strain induces a Mott-like phase transition in VO ₂ Kittiwatanakul, Salinporn; Wolf, Stuart A.; Lu, Jiwei Applied Physics Letters, Vol. 105, Issue 7 https://doi.org/10.1063/1.4893326	journal	August 2014
Overcoming catastrophic forgetting in neural networks Kirkpatrick, James; Pascanu, Razvan; Rabinowitz, Neil Proceedings of the National Academy of Sciences, Vol. 114, Issue 13 https://doi.org/10.1073/pnas.1611835114	journal	March 2017
Nanoscale Memristor Device as Synapse in Neuromorphic Systems Jo, Sung Hyun; Chang, Ting; Ebong, Idongesit Nano Letters, Vol. 10, Issue 4, p. 1297-1301 https://doi.org/10.1021/nl904092h	journal	April 2010
Oxygen Vacancies Control Transition of Resistive Switching Mode in Single-Crystal TiO 2 Memory Device Ge, Jun; Chaker, Mohamed ACS Applied Materials & Interfaces, Vol. 9, Issue 19 https://doi.org/10.1021/acsami.7b03527	journal	May 2017
Oscillatory Neurocomputers with Dynamic Connectivity Hoppensteadt, Frank C.; Izhikevich, Eugene M. Physical Review Letters, Vol. 82, Issue 14 https://doi.org/10.1103/PhysRevLett.82.2983	journal	April 1999
Dynamic conductivity scaling in photoexcited $V_{2} O_{3}$ thin films Abreu, Elsa; Wang, Siming; Ramírez, Juan Gabriel Physical Review B, Vol. 92, Issue 8 https://doi.org/10.1103/PhysRevB.92.085130	journal	August 2015
The phase transition in VO2 probed using x-ray, visible and infrared radiations Kumar, Suhas; Strachan, John Paul; Kilcoyne, A. L. David Applied Physics Letters, Vol. 108, Issue 7 https://doi.org/10.1063/1.4939746	journal	February 2016
Imprinting of Local Metallic States into VO ₂ with Ultraviolet Light Zhang, Hai-Tian; Guo, Lu; Stone, Greg Advanced Functional Materials, Vol. 26, Issue 36 https://doi.org/10.1002/adfm.201601890	journal	July 2016
Strain Control of Oxygen Vacancies in Epitaxial Strontium Cobaltite Films Petrie, Jonathan R.; Mitra, Chandrima; Jeen, Hyoungjeen Advanced Functional Materials, Vol. 26, Issue 10 https://doi.org/10.1002/adfm.201504868	journal	January 2016
Isostructural metal-insulator transition in VO ₂ Lee, D.; Chung, B.; Shi, Y. Science, Vol. 362, Issue 6418 https://doi.org/10.1126/science.aam9189	journal	November 2018
Direct Observation of Decoupled Structural and Electronic Transitions and an Ambient Pressure Monocliniclike Metallic Phase of ${VO}_{2}$ Laverock, J.; Kittiwatanakul, S.; Zakharov, A. A. Physical Review Letters, Vol. 113, Issue 21 https://doi.org/10.1103/PhysRevLett.113.216402	journal	November 2014
Observation of insulating-insulating monoclinic structural transition in macro-sized VO2 single crystals Mun, Bongjin Simon; Chen, Kai; Leem, Youngchul physica status solidi (RRL) - Rapid Research Letters, Vol. 5, Issue 3 https://doi.org/10.1002/pssr.201105011	journal	January 2011
Electronic structure of strongly correlated materials: from one-particle to many-body theory Nilsson, F.; Aryasetiawan, F. Materials Research Express, Vol. 4, Issue 3 https://doi.org/10.1088/2053-1591/aa5fa1	journal	March 2017
Femtosecond laser excitation of the semiconductor‐metal phase transition in VO ₂ Becker, Michael F.; Buckman, A. Bruce; Walser, Rodger M. Applied Physics Letters, Vol. 65, Issue 12 https://doi.org/10.1063/1.112974	journal	September 1994
Coupled-Oscillator Associative Memory Array Operation for Pattern Recognition Nikonov, Dmitri E.; Csaba, Gyorgy; Porod, Wolfgang IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol. 1 https://doi.org/10.1109/JXCDC.2015.2504049	journal	December 2015
Metal-insulator transitions Paesler, Michael Journal of Non-Crystalline Solids, Vol. 130, Issue 1 https://doi.org/10.1016/0022-3093(91)90162-y	journal	June 1991
Ab Initio Molecular-Dynamics Simulation of Neuromorphic Computing in Phase-Change Memory Materials Skelton, Jonathan M.; Loke, Desmond; Lee, Taehoon ACS Applied Materials & Interfaces, Vol. 7, Issue 26 https://doi.org/10.1021/acsami.5b01825	journal	June 2015
The future of electronics based on memristive systems Zidan, Mohammed A.; Strachan, John Paul; Lu, Wei D. Nature Electronics, Vol. 1, Issue 1 https://doi.org/10.1038/s41928-017-0006-8	journal	January 2018
Phase stabilization of VO ₂ thin films in high vacuum Zhang, Hai-Tian; Eaton, Craig; Ye, Hansheng Journal of Applied Physics, Vol. 118, Issue 18 https://doi.org/10.1063/1.4935268	journal	November 2015
Metal-insulator transitions Imada, Masatoshi; Fujimori, Atsushi; Tokura, Yoshinori Reviews of Modern Physics, Vol. 70, Issue 4, p. 1039-1263 https://doi.org/10.1103/RevModPhys.70.1039	journal	October 1998
Magnetic Excitation Spectra in ${BaFe}_{2} {As}_{2}$ : A Two-Particle Approach within a Combination of the Density Functional Theory and the Dynamical Mean-Field Theory Method Park, Hyowon; Haule, Kristjan; Kotliar, Gabriel Physical Review Letters, Vol. 107, Issue 13 https://doi.org/10.1103/PhysRevLett.107.137007	journal	September 2011
Electrically Driven Insulator–Metal Transition-Based Devices—Part I: The Electrothermal Model and Experimental Analysis for the DC Characteristics Lin, Jianqiang; Ramanathan, Shriram; Guha, Supratik IEEE Transactions on Electron Devices, Vol. 65, Issue 9 https://doi.org/10.1109/TED.2018.2859180	journal	September 2018
Capping CsPbBr3 with ZnO to improve performance and stability of perovskite memristors Wu, Ye; Wei, Yi; Huang, Yong Nano Research, Vol. 10, Issue 5 https://doi.org/10.1007/s12274-016-1288-2	journal	October 2016
An in-depth description of bipolar resistive switching in Cu/HfO x /Pt devices, a 3D kinetic Monte Carlo simulation approach Aldana, S.; Roldán, J. B.; García-Fernández, P. Journal of Applied Physics, Vol. 123, Issue 15 https://doi.org/10.1063/1.5020148	journal	April 2018
Uniform bipolar resistive switching properties with self-compliance effect of Pt/TiO 2 /p-Si devices Zou, Lilan; Hu, Wei; Fu, Jianhui AIP Advances, Vol. 4, Issue 3 https://doi.org/10.1063/1.4869018	journal	March 2014
Integration of external electric fields in molecular dynamics simulation models for resistive switching devices Gergs, T.; Dirkmann, S.; Mussenbrock, T. Journal of Applied Physics, Vol. 123, Issue 24 https://doi.org/10.1063/1.5029877	journal	June 2018
Anisotropic Electronic State via Spontaneous Phase Separation in Strained Vanadium Dioxide Films Liu, M. K.; Wagner, M.; Abreu, E. Physical Review Letters, Vol. 111, Issue 9 https://doi.org/10.1103/PhysRevLett.111.096602	journal	August 2013
Non-congruence of thermally driven structural and electronic transitions in VO ₂ Nag, Joyeeta; Haglund, Richard F.; Andrew Payzant, E. Journal of Applied Physics, Vol. 112, Issue 10 https://doi.org/10.1063/1.4764040	journal	November 2012
Giant nonvolatile resistive switching in a Mott oxide and ferroelectric hybrid Salev, Pavel; del Valle, Javier; Kalcheim, Yoav Proceedings of the National Academy of Sciences, Vol. 116, Issue 18 https://doi.org/10.1073/pnas.1822138116	journal	April 2019
Current-Driven Insulator-To-Metal Transition in Strongly Correlated VO 2 Shi, Yin; Chen, Long-Qing Physical Review Applied, Vol. 11, Issue 1 https://doi.org/10.1103/PhysRevApplied.11.014059	journal	January 2019
Neuromorphic Silicon Neuron Circuits Boahen, K.; Wang, Y.; Wijekoon, J. Frontiers Research Foundation https://doi.org/10.5167/uzh-61188	text	January 2011
Deep Learning Ganatra, Sanket Zenodo https://doi.org/10.5281/zenodo.1189359	text	January 2018
Memristive model of amoeba's learning Pershin, Yuriy; La Fontaine, Steven; Di Ventra, Massimiliano Nature Precedings https://doi.org/10.1038/npre.2008.2431.1	journal	October 2008
Reversible control of Co magnetism by voltage induced oxidation Bi, Chong; Liu, Yaohua; Newhouse-Illige, T. arXiv https://doi.org/10.48550/arxiv.1412.8668	text	January 2014
Strain Control of Oxygen Vacancies in Epitaxial Strontium Cobaltite Films Petrie, Jonathan R.; Mitra, Chandrima; Jeen, Hyoungjeen arXiv https://doi.org/10.48550/arxiv.1602.04280	text	January 2016
Overcoming catastrophic forgetting in neural networks Kirkpatrick, James; Pascanu, Razvan; Rabinowitz, Neil arXiv https://doi.org/10.48550/arxiv.1612.00796	preprint	January 2016
Continual Lifelong Learning with Neural Networks: A Review Parisi, German I.; Kemker, Ronald; Part, Jose L. arXiv https://doi.org/10.48550/arxiv.1802.07569	text	January 2018
Biological plausibility and stochasticity in scalable VO2 active memristor neurons Yi, Wei; Tsang, Kenneth K.; Lam, Stephen K. arXiv https://doi.org/10.48550/arxiv.1809.07867	text	January 2018

Similar Records

Complex Oxides for Brain‐Inspired Computing: A Review

Journal Article · Wed Nov 30 00:00:00 EST 2022 · Advanced Materials · OSTI ID:1607862

Park, Tae Joon; Deng, Sunbin; Manna, Sukriti; +8 more

A caloritronics-based Mott neuristor

Journal Article · Mon Mar 09 00:00:00 EDT 2020 · Scientific Reports · OSTI ID:1607862

del Valle, Javier; Salev, Pavel; Kalcheim, Yoav; +1 more

Biological underpinnings for lifelong learning machines

Journal Article · Sun Mar 06 00:00:00 EST 2022 · Nature Machine Intelligence · OSTI ID:1607862

Kudithipudi, Dhireesha; Aguilar-Simon, Mario; Babb, Jonathan; +9 more

Related Subjects

42 ENGINEERING

Title: Organismic materials for beyond von Neumann machines

Citation Formats

References (205)

Similar Records

Related Subjects