Optical response of BiFeO3 films subjected to uniaxial strain

Herklotz, Andreas; Rus, Stefania F.; Sohn, Changhee; KC, Santosh; Cooper, Valentino R.; Guo, Er-Jia; Ward, Thomas Zac

doi:10.1103/PhysRevMaterials.3.094410

Optical response of $BiFe O_{3}$ films subjected to uniaxial strain

Journal Article · Mon Sep 23 00:00:00 EDT 2019 · Physical Review Materials

DOI:https://doi.org/10.1103/PhysRevMaterials.3.094410· OSTI ID:1607110

^[1]; Rus, Stefania F. ^[2]; ^[3]; ^[4]; ^[5]; ^[6]; ^[5]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Martin-Luther-Univ. Halle-Wittenberg (Germany)
Renewable Energies Photovoltaics Laboratory, National Institute for Research and Development in Electrochemistry and Condensed Matter, Timisoara (Romania)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Ulsan National Institute of Science and Technology (Korea)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); San Jose State Univ., CA (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Chinese Academy of Sciences (CAS), Beijing (China)

The impact of single-axis lattice expansion on the optical response of BiFeO₃ films is examined. Low-energy He implantation is used to tailor morphotropic phases of BiFeO₃ films and study changes in their optical spectra with continuously increasing lattice expansion. He ion implantation of epitaxial rhombohedral (R)- and tetragonal (T)-like BiFeO₃ films induces uniaxial out-of-plane strain that, on R-like films, eventually leads to a complete R-T phase transition. This approach allows us to provide insights into the optical response of BiFeO₃ films. Strain doping of T-like films leads to a significant redshift of the optical absorption spectra that is theoretically explained by a lowering of Fe 3dt_2g states. R-like films, on the other hand, show a less-pronounced sensitivity to uniaxial strain and a blueshift of about 250 meV at the strain-induced R-T transition. Here, the results demonstrate that strain doping allows a deeper examination of the optical properties of epitaxial phases that are otherwise impossible to access by standard epitaxy.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: Deutsche Forschungsgemeinschaft; National Authority for Scientiﬁc Research and Innovation (ANCSI); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1607110

Journal Information:: Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 9 Vol. 3; ISSN PRMHAR; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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