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High-Rate Spinel LiMn2O4 (LMO) Following Carbonate Removal and Formation of Li-Rich Interface by ALD Treatment

Journal Article · · Journal of Physical Chemistry. C
Recent work has identified enhanced charge-storage capacity in the spinel lithium manganese oxide (LiMn2O4; LMO) lithium-ion battery cathode upon a single atomic layer deposition (ALD) cycle composed of one chemical exposure of trimethylaluminum (TMA) and one exposure of water (H2O). In this paper, we report further study of the rate capability following one TMA/H2O exposure and identify enhanced rate capability versus pristine LMO. To understand this effect, we experimentally probe the surface composition of LMO with TMA/H2O treatment using X-ray photoelectron spectroscopy measurements with inert transfer. This includes a study of the LMO surface properties following TMA exposure before exposure to H2O. We identify the removal of a surface carbonate layer from LMO upon TMA exposure and the formation of a Li-rich aluminum oxide surface layer upon subsequent H2O exposure. We also observe a previously undescribed phenomenon of Li ions depleting from the LMO surface upon TMA exposure and returning upon H2O exposure. These effects are connected with the enhanced rate capability of ALD-coated LMO and are related to a range of emerging studies on carbonate surface layers in battery cathodes, as well as the use of ALD to stabilize battery interfaces.
Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States). Center for Nanoscale Materials; Energy Frontier Research Centers (EFRC) (United States). Center for Electrical Energy Storage (CEES)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1606541
Journal Information:
Journal of Physical Chemistry. C, Journal Name: Journal of Physical Chemistry. C Journal Issue: 39 Vol. 123; ISSN 1932-7447
Publisher:
American Chemical SocietyCopyright Statement
Country of Publication:
United States
Language:
English

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