Strained bilayer WSe2 with reduced exciton-phonon coupling

Aslan, Ozgur Burak; Deng, Minda; Brongersma, Mark L.; Heinz, Tony F.

doi:10.1103/PhysRevB.101.115305

Strained bilayer ${WSe}_{2}$ with reduced exciton-phonon coupling

Journal Article · Mon Mar 23 00:00:00 EDT 2020 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.101.115305· OSTI ID:1605986

^[1]; Deng, Minda ^[2]; ^[3]; ^[2]

Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; Stanford University
Stanford Univ., CA (United States). Dept. of Applied Physics; SLAC National Accelerator Lab., Menlo Park, CA (United States)
Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials

We explore excitonic absorption and emission in bilayer WSe₂ under tensile strain. We observe a redshift of 110 meV in the energy of the A exciton absorption peak (at the direct gap at the K point in the Brillouin zone) under 2.1% uniaxial tensile strain. In addition, under the same strain, the spectral linewidth of the A exciton at room temperature decreases by a factor of 2, from 70 to 36 meV. We show that this decrease is a result of suppression of phonon-mediated exciton scattering channels. This suppression is associated with the relative upshift under strain of the Q valley in the conduction band (involved in the indirect exciton emission), which is nearly degenerate with the K valley (involved in the A exciton). We analyze the strain-dependent absorption and photoluminescence spectra to determine the relative positions of these valleys and to infer intervalley scattering rates. Our model describes well the decrease and the distinct trends in the A exciton linewidth of monolayer and bilayer WSe₂ under strain. The findings show that strain can be used to tune, as well as to probe, the relative energies of band extrema and exciton scattering channels in two-dimensional semiconductors.

View Accepted Manuscript (DOE)

Research Organization:: SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Stanford Univ., CA (United States)

Sponsoring Organization:: Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-76SF00515; SC0019140

OSTI ID:: 1605986

Alternate ID(s):: OSTI ID: 1605972
OSTI ID: 1616991

Journal Information:: Physical Review B, Journal Name: Physical Review B Journal Issue: 11 Vol. 101; ISSN 2469-9950; ISSN PRBMDO

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

References (63)

Electronic properties of single-layer and multilayer transition metal dichalcogenides MX ₂ ( M = Mo, W and X = S, Se): Electronic properties of TMDs Roldán, Rafael; Silva-Guillén, Jose A.; López-Sancho, M. Pilar Annalen der Physik, Vol. 526, Issue 9-10 https://doi.org/10.1002/andp.201400128	journal	September 2014
Strain Engineering and Raman Spectroscopy of Monolayer Transition Metal Dichalcogenides Dadgar, A. M.; Scullion, D.; Kang, K. Chemistry of Materials, Vol. 30, Issue 15 https://doi.org/10.1021/acs.chemmater.8b01672	journal	July 2018
Dielectric Genome of van der Waals Heterostructures Andersen, Kirsten; Latini, Simone; Thygesen, Kristian S. Nano Letters, Vol. 15, Issue 7 https://doi.org/10.1021/acs.nanolett.5b01251	journal	June 2015
Radiatively Limited Dephasing and Exciton Dynamics in MoSe ₂ Monolayers Revealed with Four-Wave Mixing Microscopy Jakubczyk, Tomasz; Delmonte, Valentin; Koperski, Maciej Nano Letters, Vol. 16, Issue 9 https://doi.org/10.1021/acs.nanolett.6b01060	journal	August 2016
Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS ₂ Lloyd, David; Liu, Xinghui; Christopher, Jason W. Nano Letters, Vol. 16, Issue 9 https://doi.org/10.1021/acs.nanolett.6b02615	journal	August 2016
Strain Control of Exciton–Phonon Coupling in Atomically Thin Semiconductors Niehues, Iris; Schmidt, Robert; Drüppel, Matthias Nano Letters, Vol. 18, Issue 3 https://doi.org/10.1021/acs.nanolett.7b04868	journal	February 2018
Probing the Optical Properties and Strain-Tuning of Ultrathin Mo _{1– x} W _x Te ₂ Aslan, Ozgur Burak; Datye, Isha M.; Mleczko, Michal J. Nano Letters, Vol. 18, Issue 4 https://doi.org/10.1021/acs.nanolett.8b00049	journal	March 2018
Enhancement of Exciton–Phonon Scattering from Monolayer to Bilayer WS ₂ Raja, Archana; Selig, Malte; Berghäuser, Gunnar Nano Letters, Vol. 18, Issue 10 https://doi.org/10.1021/acs.nanolett.8b01793	journal	August 2018
Elucidating the Optical Properties of Novel Heterolayered Materials Based on MoTe ₂ –InN for Photovoltaic Applications Villegas, Cesar E. P.; Rocha, A. R. The Journal of Physical Chemistry C, Vol. 119, Issue 21 https://doi.org/10.1021/jp5122596	journal	May 2015
Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS ₂ He, Keliang; Poole, Charles; Mak, Kin Fai Nano Letters, Vol. 13, Issue 6 https://doi.org/10.1021/nl4013166	journal	May 2013
Bandgap Engineering of Strained Monolayer and Bilayer MoS₂ Conley, Hiram J.; Wang, Bin; Ziegler, Jed I. Nano Letters, Vol. 13, Issue 8, p. 3626-3630 https://doi.org/10.1021/nl4014748	journal	July 2013
Origin of Indirect Optical Transitions in Few-Layer MoS ₂ , WS ₂ , and WSe ₂ Zhao, Weijie; Ribeiro, R. M.; Toh, Minglin Nano Letters, Vol. 13, Issue 11 https://doi.org/10.1021/nl403270k	journal	October 2013
Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe ₂ Desai, Sujay B.; Seol, Gyungseon; Kang, Jeong Seuk Nano Letters, Vol. 14, Issue 8 https://doi.org/10.1021/nl501638a	journal	July 2014
Stretching and Breaking of Ultrathin MoS ₂ Bertolazzi, Simone; Brivio, Jacopo; Kis, Andras ACS Nano, Vol. 5, Issue 12 https://doi.org/10.1021/nn203879f	journal	November 2011
Evolution of Electronic Structure in Atomically Thin Sheets of WS ₂ and WSe ₂ Zhao, Weijie; Ghorannevis, Zohreh; Chu, Leiqiang ACS Nano, Vol. 7, Issue 1 https://doi.org/10.1021/nn305275h	journal	December 2012
High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity Kang, Kibum; Xie, Saien; Huang, Lujie Nature, Vol. 520, Issue 7549 https://doi.org/10.1038/nature14417	journal	April 2015
Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides Selig, Malte; Berghäuser, Gunnar; Raja, Archana Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms13279	journal	November 2016
Coulomb engineering of the bandgap and excitons in two-dimensional materials Raja, Archana; Chaves, Andrey; Yu, Jaeeun Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/ncomms15251	journal	May 2017
Intrinsic homogeneous linewidth and broadening mechanisms of excitons in monolayer transition metal dichalcogenides Moody, Galan; Kavir Dass, Chandriker; Hao, Kai Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms9315	journal	September 2015
Resonant internal quantum transitions and femtosecond radiative decay of excitons in monolayer WSe2 Poellmann, C.; Steinleitner, P.; Leierseder, U. Nature Materials, Vol. 14, Issue 9 https://doi.org/10.1038/nmat4356	journal	July 2015
Strain-engineered growth of two-dimensional materials Ahn, Geun Ho; Amani, Matin; Rasool, Haider Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/s41467-017-00516-5	journal	September 2017
Dielectric disorder in two-dimensional materials Raja, Archana; Waldecker, Lutz; Zipfel, Jonas Nature Nanotechnology, Vol. 14, Issue 9 https://doi.org/10.1038/s41565-019-0520-0	journal	August 2019
Visualizing electrostatic gating effects in two-dimensional heterostructures Nguyen, Paul V.; Teutsch, Natalie C.; Wilson, Nathan P. Nature, Vol. 572, Issue 7768 https://doi.org/10.1038/s41586-019-1402-1	journal	July 2019
Protecting the properties of monolayer MoS2 on silicon based substrates with an atomically thin buffer Man, Michael K. L.; Deckoff-Jones, Skylar; Winchester, Andrew Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep20890	journal	February 2016
Strain engineering of WS ₂ , WSe ₂ , and WTe ₂ Amin, B.; Kaloni, T. P.; Schwingenschlögl, U. RSC Advances, Vol. 4, Issue 65 https://doi.org/10.1039/C4RA06378C	journal	January 2014
Precise and reversible band gap tuning in single-layer MoSe ₂ by uniaxial strain Island, Joshua O.; Kuc, Agnieszka; Diependaal, Erik H. Nanoscale, Vol. 8, Issue 5 https://doi.org/10.1039/C5NR08219F	journal	January 2016
Pressure-induced K–Λ crossing in monolayer WSe ₂ Ye, Yanxia; Dou, Xiuming; Ding, Kun Nanoscale, Vol. 8, Issue 20 https://doi.org/10.1039/C6NR02690G	journal	January 2016
Exciton dynamics in WSe ₂ bilayers Wang, G.; Marie, X.; Bouet, L. Applied Physics Letters, Vol. 105, Issue 18 https://doi.org/10.1063/1.4900945	journal	November 2014
Very large strain gauges based on single layer MoSe ₂ and WSe ₂ for sensing applications Hosseini, Manouchehr; Elahi, Mohammad; Pourfath, Mahdi Applied Physics Letters, Vol. 107, Issue 25 https://doi.org/10.1063/1.4937438	journal	December 2015
Strain-induced giant second-harmonic generation in monolayered 2H-MoX2 (X = S, Se, Te) Rhim, S. H.; Kim, Yong Soo; Freeman, A. J. Applied Physics Letters, Vol. 107, Issue 24 https://doi.org/10.1063/1.4938120	journal	December 2015
Structural and electronic properties of MoS ₂ , WS ₂ , and WS ₂ /MoS ₂ heterostructures encapsulated with hexagonal boron nitride monolayers Yelgel, C.; Yelgel, Ö. C.; Gülseren, O. Journal of Applied Physics, Vol. 122, Issue 6 https://doi.org/10.1063/1.4998522	journal	August 2017
Band structure engineering of monolayer MoS ₂ on h-BN: first-principles calculations Huang, Zongyu; He, Chaoyu; Qi, Xiang Journal of Physics D: Applied Physics, Vol. 47, Issue 7 https://doi.org/10.1088/0022-3727/47/7/075301	journal	January 2014
Spin–orbit coupling in the band structure of monolayer WSe ₂ Le, Duy; Barinov, Alexei; Preciado, Edwin Journal of Physics: Condensed Matter, Vol. 27, Issue 18 https://doi.org/10.1088/0953-8984/27/18/182201	journal	April 2015
Semiconductor to metal transition in bilayer transition metals dichalcogenides MX ₂ ( M = Mo, W; X = S, Se, Te) Kumar, Ashok; Ahluwalia, P. K. Modelling and Simulation in Materials Science and Engineering, Vol. 21, Issue 6 https://doi.org/10.1088/0965-0393/21/6/065015	journal	August 2013
Strain-modulated excitonic gaps in mono- and bi-layer MoSe ₂ Ji, Jianting; Zhang, Anmin; Xia, Tianlong Chinese Physics B, Vol. 25, Issue 7 https://doi.org/10.1088/1674-1056/25/7/077802	journal	July 2016
k · p theory for two-dimensional transition metal dichalcogenide semiconductors Kormányos, Andor; Burkard, Guido; Gmitra, Martin 2D Materials, Vol. 2, Issue 2 https://doi.org/10.1088/2053-1583/2/2/022001	journal	April 2015
Reversible uniaxial strain tuning in atomically thin WSe ₂ Schmidt, Robert; Niehues, Iris; Schneider, Robert 2D Materials, Vol. 3, Issue 2 https://doi.org/10.1088/2053-1583/3/2/021011	journal	June 2016
Approaching the intrinsic photoluminescence linewidth in transition metal dichalcogenide monolayers Ajayi, Obafunso A.; Ardelean, Jenny V.; Shepard, Gabriella D. 2D Materials, Vol. 4, Issue 3 https://doi.org/10.1088/2053-1583/aa6aa1	journal	July 2017
Exciton broadening and band renormalization due to Dexter-like intervalley coupling Bernal-Villamil, Ivan; Berghäuser, Gunnar; Selig, Malte 2D Materials, Vol. 5, Issue 2 https://doi.org/10.1088/2053-1583/aaaa8b	journal	February 2018
Two-dimensional models for the optical response of thin films Li, Yilei; Heinz, Tony F. 2D Materials, Vol. 5, Issue 2 https://doi.org/10.1088/2053-1583/aab0cf	journal	March 2018
Impact of strain on the excitonic linewidth in transition metal dichalcogenides Khatibi, Zahra; Feierabend, Maja; Selig, Malte 2D Materials, Vol. 6, Issue 1 https://doi.org/10.1088/2053-1583/aae953	journal	November 2018
Finite-momentum exciton landscape in mono- and bilayer transition metal dichalcogenides Deilmann, Thorsten; Thygesen, Kristian Sommer 2D Materials, Vol. 6, Issue 3 https://doi.org/10.1088/2053-1583/ab0e1d	journal	April 2019
Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H- M X 2 semiconductors ( M = Mo, W; X = S, Se, Te) Yun, Won Seok; Han, S. W.; Hong, Soon Cheol Physical Review B, Vol. 85, Issue 3 https://doi.org/10.1103/PhysRevB.85.033305	journal	January 2012
Phonon-limited mobility in n -type single-layer MoS 2 from first principles Kaasbjerg, Kristen; Thygesen, Kristian S.; Jacobsen, Karsten W. Physical Review B, Vol. 85, Issue 11 https://doi.org/10.1103/PhysRevB.85.115317	journal	March 2012
Intrinsic electrical transport properties of monolayer silicene and MoS 2 from first principles Li, Xiaodong; Mullen, Jeffrey T.; Jin, Zhenghe Physical Review B, Vol. 87, Issue 11 https://doi.org/10.1103/PhysRevB.87.115418	journal	March 2013
Anomalous Raman spectra and thickness-dependent electronic properties of WSe 2 Sahin, H.; Tongay, S.; Horzum, S. Physical Review B, Vol. 87, Issue 16 https://doi.org/10.1103/PhysRevB.87.165409	journal	April 2013
Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS 2 Zhu, C. R.; Wang, G.; Liu, B. L. Physical Review B, Vol. 88, Issue 12 https://doi.org/10.1103/PhysRevB.88.121301	journal	September 2013
Orbital analysis of electronic structure and phonon dispersion in MoS 2 , MoSe 2 , WS 2 , and WSe 2 monolayers under strain Chang, Chung-Huai; Fan, Xiaofeng; Lin, Shi-Hsin Physical Review B, Vol. 88, Issue 19 https://doi.org/10.1103/PhysRevB.88.195420	journal	November 2013
Intrinsic transport properties of electrons and holes in monolayer transition-metal dichalcogenides Jin, Zhenghe; Li, Xiaodong; Mullen, Jeffrey T. Physical Review B, Vol. 90, Issue 4 https://doi.org/10.1103/PhysRevB.90.045422	journal	July 2014
Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS 2 , Mo S e 2 , WS 2 , and WS e 2 Li, Yilei; Chernikov, Alexey; Zhang, Xian Physical Review B, Vol. 90, Issue 20 https://doi.org/10.1103/PhysRevB.90.205422	journal	November 2014
Exciton radiative lifetime in transition metal dichalcogenide monolayers Robert, C.; Lagarde, D.; Cadiz, F. Physical Review B, Vol. 93, Issue 20 https://doi.org/10.1103/PhysRevB.93.205423	journal	May 2016
Strain-controlled spin splitting in the conduction band of monolayer WS 2 Absor, Moh. Adhib Ulil; Kotaka, Hiroki; Ishii, Fumiyuki Physical Review B, Vol. 94, Issue 11 https://doi.org/10.1103/PhysRevB.94.115131	journal	September 2016
Impact of strain on the optical fingerprint of monolayer transition-metal dichalcogenides Feierabend, Maja; Morlet, Alexandre; Berghäuser, Gunnar Physical Review B, Vol. 96, Issue 4 https://doi.org/10.1103/PhysRevB.96.045425	journal	July 2017
Exciton broadening in WS 2 /graphene heterostructures Hill, Heather M.; Rigosi, Albert F.; Raja, Archana Physical Review B, Vol. 96, Issue 20 https://doi.org/10.1103/PhysRevB.96.205401	journal	November 2017
Strain tuning of excitons in monolayer WSe 2 Aslan, Ozgur Burak; Deng, Minda; Heinz, Tony F. Physical Review B, Vol. 98, Issue 11 https://doi.org/10.1103/PhysRevB.98.115308	journal	September 2018
Tightly Bound Excitons in Monolayer WSe 2 He, Keliang; Kumar, Nardeep; Zhao, Liang Physical Review Letters, Vol. 113, Issue 2 https://doi.org/10.1103/PhysRevLett.113.026803	journal	July 2014
Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS 2 Chernikov, Alexey; Berkelbach, Timothy C.; Hill, Heather M. Physical Review Letters, Vol. 113, Issue 7 https://doi.org/10.1103/PhysRevLett.113.076802	journal	August 2014
Shubnikov–de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe 2 : Landau Level Degeneracy, Effective Mass, and Negative Compressibility Fallahazad, Babak; Movva, Hema C. P.; Kim, Kyounghwan Physical Review Letters, Vol. 116, Issue 8 https://doi.org/10.1103/PhysRevLett.116.086601	journal	February 2016
Phonon Sidebands in Monolayer Transition Metal Dichalcogenides Christiansen, Dominik; Selig, Malte; Berghäuser, Gunnar Physical Review Letters, Vol. 119, Issue 18 https://doi.org/10.1103/PhysRevLett.119.187402	journal	November 2017
Excitonic Linewidth Approaching the Homogeneous Limit in MoS 2 -Based van der Waals Heterostructures Cadiz, F.; Courtade, E.; Robert, C. Physical Review X, Vol. 7, Issue 2 https://doi.org/10.1103/PhysRevX.7.021026	journal	May 2017
Strain-Induced Modulation of Electron Mobility in Single-Layer Transition Metal Dichalcogenides MX 2 ( $M = {\rm Mo}$ , W; $X = {\rm S}$ , Se) Hosseini, Manouchehr; Elahi, Mohammad; Pourfath, Mahdi IEEE Transactions on Electron Devices, Vol. 62, Issue 10 https://doi.org/10.1109/TED.2015.2461617	journal	October 2015
Determination of band offsets, hybridization, and exciton binding in 2D semiconductor heterostructures Wilson, Neil R.; Nguyen, Paul V.; Seyler, Kyle Science Advances, Vol. 3, Issue 2 https://doi.org/10.1126/sciadv.1601832	journal	February 2017
Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2 Tonndorf, Philipp; Schmidt, Robert; Böttger, Philipp Optics Express, Vol. 21, Issue 4 https://doi.org/10.1364/OE.21.004908	journal	January 2013

Similar Records

Strain tuning of excitons in monolayer

{WSe}_{2}

Journal Article · Fri Sep 14 20:00:00 EDT 2018 · Physical Review B · OSTI ID:1474105

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
Excitons
electron-phonon coupling
electronic structure
strain
two-dimensional materials

Strained bilayer WSe2 with reduced exciton-phonon coupling

Citation Formats

References (63)

Similar Records

Related Subjects

Strained bilayer ${WSe}_{2}$ with reduced exciton-phonon coupling