Self-Aligned, Selective Area Poly-Si/SiO2 Passivated Contacts for Enhanced Photocurrent in Front/Back Solar Cells

Conference · Thu Feb 06 04:00:00 EST 2020

DOI:https://doi.org/10.1109/PVSC40753.2019.8981274· OSTI ID:1605068

Young, David L ^[1]; Theingi, San ^[1]; LaSalvia, Vincenzo A ^[1]; Chen, Kejun ^[1]; Nemeth, William M ^[1]; Findley, Dawn ^[1]; Page, Matthew ^[1]; Stradins, Pauls ^[1]

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1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Poly-Si/SiO 2 passivated contact front/back solar cells suffer low Jsc due to parasitic absorption in the front poly-Si layer. We demonstrate a self-aligned, selective area front contact dry-etch technique that retains the as-deposited poly-Si beneath the metal grid lines but thins it elsewhere. Jsc improves by 0.7 mA/cm 2 over our standard 40 nm thick poly-Si. Greater improvements are expected with thicker poly-Si needed for fired metal contacts. Surface passivation is slightly diminished with poly-Si thinning but can be partially restored with rehydrogenation.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1605068
• Report Number(s): NREL/CP-5900-76354
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
RIE etching
passivated contacts
silicon
solar cell