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Microwave Meissner screening properties of proximity-coupled topological-insulator / superconductor bilayers

Journal Article · · Physical Review Materials
 [1];  [2];  [2];  [2];  [2]
  1. Univ. of Maryland, College Park, MD (United States). Maryland Quantum Materials Center; University of Maryland
  2. Univ. of Maryland, College Park, MD (United States). Maryland Quantum Materials Center
The proximity-coupled topological-insulator / superconductor (TI/SC) bilayer system is a representative system to realize topological superconductivity. In order to better understand this unique state and enable future applications of the TI/SC bilayer, a comprehensive characterization and understanding of the microscopic properties of the bilayer are required. In this work, a microwave Meissner screening study, which exploits a high-precision microwave resonator technique, is conducted on the SmB6/YB6 thin-film bilayers as an example TI/SC system. The study reveals spatially dependent electrodynamic screening response of the TI/SC system that is not accessible to other techniques, from which the corresponding microscopic properties of a TI/SC bilayer can be obtained. The TI thickness dependence of the effective penetration depth suggests the existence of a bulk insulating region in the TI layer. The spatially dependent electrodynamic screening model analysis provides an estimate for the characteristic lengths of the TI/SC bilayer: normal penetration depth, normal coherence length, and the thickness of the surface states.
Research Organization:
Univ. of Maryland, College Park, MD (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE Office of Science (SC), High Energy Physics (HEP) (SC-25)
Grant/Contract Number:
SC0017931
OSTI ID:
1604579
Journal Information:
Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 12 Vol. 3; ISSN PRMHAR; ISSN 2475-9953
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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