Effect of heat treatment on hall mobility and concentration of charge carriers in single crystals of silicon doped with titanium, zirconium, or hafnium
- Baikov Institute of Metallurgy, Moscow (Russian Federation)
Earlier, it was suggested that doping of silicon single crystals with Group IV elements may reduce the content of free oxygen in the solidified ingot. Kazakevich et al. revealed the presence of B{sub i}O{sub j} and C{sub i}O{sub j} complexes near Ti, Zr, or Hf precipitates formed during growth. Studies reported showed that irradiation with high-energy electrons has the same effect on the electrical resistivity of hafnium-doped crystals as post-growth annealing at 600{degrees}C for 1 h. Based on this finding it was concluded that no oxygen-containing thermal donors are formed in ingots of hafnium-doped silicon. In this work, the authors studied the effect of heat treatment on the electrical properties of silicon single crystals doped with titanium, zirconium, or hafnium.
- OSTI ID:
- 160408
- Journal Information:
- Inorganic Materials, Vol. 31, Issue 9; Other Information: PBD: Sep 1995; TN: Translated from Neorganicheskie Materialy; 31: No. 9, 1146-1149(1995)
- Country of Publication:
- United States
- Language:
- English
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