Mitigating Process Induced Degradation in p- and n-Czochralski Silicon Wafers with Tabula Rasa

Conference · Wed Feb 05 23:00:00 EST 2020

DOI:https://doi.org/10.1109/PVSC40753.2019.8981248· OSTI ID:1603882

Meyer, Abigail R ^[1]; LaSalvia, Vincenzo A ^[1]; Nemeth, William M ^[1]; Page, Matthew ^[1]; Agarwal, Sumit ^[1]; Agarwal, Sumit ^[2]; Stradins, Pauls ^[1]

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1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
2. Colorado School of Mines

We report on the bulk properties of of n- and p- type Czochralski silicon (Cz-Si) after a high-temperature annealing process known as Tabula Rasa (TR), which is primarily used to annihilate oxygen precipitates. We find significant differences in n- and p-type substrates as well as a strong dependence on the ambient in the resulting process induced degradation. We attribute this ambient dependence to either injection of interstitials or vacancies into the bulk during TR. Finally, we show that subsequent gettering is enhanced due to the annihilation of oxygen precipitates.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1603882
• Report Number(s): NREL/CP-5900-73149
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
Tabula Rasa
light-induced degradation
process-induced degradation
silicon