Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene

Gao, Zhaoli; Wang, Sheng; Berry, Joel; Zhang, Qicheng; Gebhardt, Julian; Parkin, William M.; Avila, Jose; Yi, Hemian; Chen, Chaoyu; Hurtado-Parra, Sebastian; Drndić, Marija; Rappe, Andrew M.; Srolovitz, David J.; Kikkawa, James M.; Luo, Zhengtang; Asensio, Maria C.; Wang, Feng; Johnson, A. T.  Charlie

doi:10.1038/s41467-019-14022-3

Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene

Journal Article · Tue Jan 28 00:00:00 EST 2020 · Nature Communications

DOI:https://doi.org/10.1038/s41467-019-14022-3· OSTI ID:1603611

^[1]; ^[2]; Berry, Joel ^[3]; ^[4]; Gebhardt, Julian ^[5]; Parkin, William M. ^[5]; Avila, Jose ^[6]; Yi, Hemian ^[6]; ^[6]; Hurtado-Parra, Sebastian ^[5]; Drndić, Marija ^[5]; ^[5]; Srolovitz, David J. ^[7]; Kikkawa, James M. ^[5]; Luo, Zhengtang ^[8]; ^[9]; ^[10]; ^[5]

Univ. of Pennsylvania, Philadelphia, PA (United States); Chinese Univ. of Hong Kong, Shatin (Hong Kong)
Univ. of California, Berkeley, CA (United States)
Univ. of Pennsylvania, Philadelphia, PA (United States); Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Univ. of Pennsylvania, Philadelphia, PA (United States); Hong Kong Univ. of Science and Technology, Kowloon (Hong Kong)
Univ. of Pennsylvania, Philadelphia, PA (United States)
Univ. Paris-Saclay Saint-Aubin, Gif sur Yvette (France)
Univ. of Pennsylvania, Philadelphia, PA (United States); City Univ. of Hong Kong, Kowloon (Hong Kong)
Hong Kong Univ. of Science and Technology, Kowloon (Hong Kong)
Materials Science Inst. of Madrid (ICMM) (Spain)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

The properties of van der Waals (vdW) materials often vary dramatically with the atomic stacking order between layers, but this order can be difficult to control. Trilayer graphene (TLG) stacks in either a semimetallic ABA or a semiconducting ABC configuration with a gate-tunable band gap, but the latter has only been produced by exfoliation. Here we present a chemical vapor deposition approach to TLG growth that yields greatly enhanced fraction and size of ABC domains. The key insight is that substrate curvature can stabilize ABC domains. Controllable ABC yields ~59% were achieved by tailoring substrate curvature levels. ABC fractions remained high after transfer to device substrates, as confirmed by transport measurements revealing the expected tunable ABC band gap. Substrate topography engineering provides a path to large-scale synthesis of epitaxial ABC-TLG and other vdW materials.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: German Research Council (DFG); National Science Foundation (NSF); USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231; AC52-07NA27344; SC0012575

OSTI ID:: 1603611

Alternate ID(s):: OSTI ID: 1633022

Report Number(s):: LLNL-JRNL--802857; ark:/13030/qt6bd2b0db

Journal Information:: Nature Communications, Journal Name: Nature Communications Journal Issue: 1 Vol. 11; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

References (80)

Reversible work transition state theory: application to dissociative adsorption of hydrogen Mills, Gregory; Jónsson, Hannes; Schenter, Gregory K. Surface Science, Vol. 324, Issue 2-3 https://doi.org/10.1016/0039-6028(94)00731-4	journal	February 1995
Formation process of graphene on SiC (0001) Norimatsu, W.; Kusunoki, M. Physica E: Low-dimensional Systems and Nanostructures, Vol. 42, Issue 4 https://doi.org/10.1016/j.physe.2009.11.151	journal	February 2010
Direct Observation of a Gate Tunable Band Gap in Electrical Transport in ABC-Trilayer Graphene Khodkov, Tymofiy; Khrapach, Ivan; Craciun, Monica Felicia Nano Letters, Vol. 15, Issue 7 https://doi.org/10.1021/acs.nanolett.5b00772	journal	June 2015
Crystalline Bilayer Graphene with Preferential Stacking from Ni–Cu Gradient Alloy Gao, Zhaoli; Zhang, Qicheng; Naylor, Carl H. ACS Nano, Vol. 12, Issue 3 https://doi.org/10.1021/acsnano.7b06992	journal	February 2018
Imaging Stacking Order in Few-Layer Graphene Lui, Chun Hung; Li, Zhiqiang; Chen, Zheyuan Nano Letters, Vol. 11, Issue 1 https://doi.org/10.1021/nl1032827	journal	January 2011
Twinning and Twisting of Tri- and Bilayer Graphene Brown, Lola; Hovden, Robert; Huang, Pinshane Nano Letters, Vol. 12, Issue 3 https://doi.org/10.1021/nl204547v	journal	February 2012
Transport Studies of Dual-Gated ABC and ABA Trilayer Graphene: Band Gap Opening and Band Structure Tuning in Very Large Perpendicular Electric Fields Zou, K.; Zhang, Fan; Clapp, C. Nano Letters, Vol. 13, Issue 2 https://doi.org/10.1021/nl303375a	journal	January 2013
Growth and Raman Spectra of Single-Crystal Trilayer Graphene with Different Stacking Orientations Zhao, Haiming; Lin, Yung-Chang; Yeh, Chao-Hui ACS Nano, Vol. 8, Issue 10 https://doi.org/10.1021/nn5044959	journal	October 2014
Selective fabrication of free-standing ABA and ABC trilayer graphene with/without Dirac-cone energy bands Sugawara, Katsuaki; Yamamura, Norifumi; Matsuda, Keita NPG Asia Materials, Vol. 10, Issue 2 https://doi.org/10.1038/am.2017.238	journal	February 2018
Topological valley transport at bilayer graphene domain walls Ju, Long; Shi, Zhiwen; Nair, Nityan Nature, Vol. 520, Issue 7549 https://doi.org/10.1038/nature14364	journal	April 2015
Correlated insulator behaviour at half-filling in magic-angle graphene superlattices Cao, Yuan; Fatemi, Valla; Demir, Ahmet Nature, Vol. 556, Issue 7699 https://doi.org/10.1038/nature26154	journal	March 2018
Electric field control of soliton motion and stacking in trilayer graphene Yankowitz, Matthew; Wang, Joel I-Jan; Birdwell, A. Glen Nature Materials, Vol. 13, Issue 8 https://doi.org/10.1038/nmat3965	journal	April 2014
Soliton-dependent plasmon reflection at bilayer graphene domain walls Jiang, Lili; Shi, Zhiwen; Zeng, Bo Nature Materials, Vol. 15, Issue 8 https://doi.org/10.1038/nmat4653	journal	May 2016
Quantum Hall effect and Landau-level crossing of Dirac fermions in trilayer graphene Taychatanapat, Thiti; Watanabe, Kenji; Taniguchi, Takashi Nature Physics, Vol. 7, Issue 8 https://doi.org/10.1038/nphys2008	journal	June 2011
The ABC of 2D materials Morpurgo, Alberto F. Nature Physics, Vol. 11, Issue 8 https://doi.org/10.1038/nphys3430	journal	July 2015
Evidence of a gate-tunable Mott insulator in a trilayer graphene moiré superlattice Chen, Guorui; Jiang, Lili; Wu, Shuang Nature Physics, Vol. 15, Issue 3 https://doi.org/10.1038/s41567-018-0387-2	journal	January 2019
Dynamic band-structure tuning of graphene moiré superlattices with pressure Yankowitz, Matthew; Jung, Jeil; Laksono, Evan Nature, Vol. 557, Issue 7705 https://doi.org/10.1038/s41586-018-0107-1	journal	May 2018
Mapping the twist-angle disorder and Landau levels in magic-angle graphene Uri, A.; Grover, S.; Cao, Y. Nature, Vol. 581, Issue 7806 https://doi.org/10.1038/s41586-020-2255-3	journal	May 2020
Atomic and electronic structure of trilayer graphene/SiC(0001): Evidence of Strong Dependence on Stacking Sequence and charge transfer Pierucci, Debora; Brumme, Thomas; Girard, Jean-Christophe Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep33487	journal	September 2016
Influence of the surface dipole layer and Pauli repulsion on band energies and doping in graphene adsorbed on metal surfaces Gebhardt, Julian; Viñes, Francesc; Görling, Andreas Physical Review B, Vol. 86, Issue 19 https://doi.org/10.1103/physrevb.86.195431	journal	November 2012
Structure and energetics of interlayer dislocations in bilayer graphene Dai, Shuyang; Xiang, Yang; Srolovitz, David J. Physical Review B, Vol. 93, Issue 8 https://doi.org/10.1103/physrevb.93.085410	journal	February 2016
Doping Graphene with Metal Contacts Giovannetti, G.; Khomyakov, P. A.; Brocks, G. Physical Review Letters, Vol. 101, Issue 2 https://doi.org/10.1103/physrevlett.101.026803	journal	July 2008
Sliding Mechanisms in Multilayered Hexagonal Boron Nitride and Graphene: The Effects of Directionality, Thickness, and Sliding Constraints Gao, Wang; Tkatchenko, Alexandre Physical Review Letters, Vol. 114, Issue 9 https://doi.org/10.1103/physrevlett.114.096101	journal	March 2015
What Drives Metal-Surface Step Bunching in Graphene Chemical Vapor Deposition? Yi, Ding; Luo, Da; Wang, Zhu-Jun Physical Review Letters, Vol. 120, Issue 24 https://doi.org/10.1103/physrevlett.120.246101	journal	June 2018
Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene Lee, C.; Wei, X.; Kysar, J. W. Science, Vol. 321, Issue 5887, p. 385-388 https://doi.org/10.1126/science.1157996	journal	July 2008
Colossal grain growth yields single-crystal metal foils by contact-free annealing Jin, Sunghwan; Huang, Ming; Kwon, Youngwoo Science, Vol. 362, Issue 6418 https://doi.org/10.1126/science.aao3373	journal	October 2018
Lattice Dynamical Model for Graphite-Bromine Intercalation Compounds Al-Jishi, R.; Dresselhaus, G. MRS Proceedings, Vol. 20 https://doi.org/10.1557/proc-20-301	journal	January 1982
First-principles study of the interaction and charge transfer between graphene and metals Khomyakov, P. A.; Giovannetti, G.; Rusu, P. C. arXiv https://doi.org/10.48550/arxiv.0902.1203	text	January 2009
Stacking-Dependent Band Gap and Quantum Transport in Trilayer Graphene Bao, W.; Jing, L.; Lee, Y. arXiv https://doi.org/10.48550/arxiv.1103.6088	text	January 2011
Observation of an electrically tunable band gap in trilayer graphene Lui, Chun Hung; Li, Zhiqiang; Mak, Kin Fai arXiv https://doi.org/10.48550/arxiv.1105.4658	text	January 2011
Stacking-dependent electronic structure of trilayer graphene resolved by nanospot angle-resolved photoemission spectroscopy Bao, Changhua; Yao, Wei; Wang, Eryin arXiv https://doi.org/10.48550/arxiv.1702.08307	text	January 2017
Ab initio molecular simulations with numeric atom-centered orbitals Blum, Volker; Gehrke, Ralf; Hanke, Felix Computer Physics Communications, Vol. 180, Issue 11 https://doi.org/10.1016/j.cpc.2009.06.022	journal	November 2009
Stacking-Dependent Electronic Structure of Trilayer Graphene Resolved by Nanospot Angle-Resolved Photoemission Spectroscopy Bao, Changhua; Yao, Wei; Wang, Eryin Nano Letters, Vol. 17, Issue 3 https://doi.org/10.1021/acs.nanolett.6b04698	journal	February 2017
Layer Number and Stacking Sequence Imaging of Few-Layer Graphene by Transmission Electron Microscopy Ping, Jinglei; Fuhrer, Michael S. Nano Letters, Vol. 12, Issue 9 https://doi.org/10.1021/nl301932v	journal	January 2012
Van der Waals heterostructures Geim, A. K.; Grigorieva, I. V. Nature, Vol. 499, Issue 7459, p. 419-425 https://doi.org/10.1038/nature12385	journal	July 2013
Unconventional superconductivity in magic-angle graphene superlattices Cao, Yuan; Fatemi, Valla; Fang, Shiang Nature, Vol. 556, Issue 7699 https://doi.org/10.1038/nature26160	journal	March 2018
Composite fermions and broken symmetries in graphene Amet, F.; Bestwick, A. J.; Williams, J. R. Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms6838	journal	January 2015
Trilayer graphene is a semimetal with a gate-tunable band overlap Craciun, M. F.; Russo, S.; Yamamoto, M. Nature Nanotechnology, Vol. 4, Issue 6 https://doi.org/10.1038/nnano.2009.89	journal	April 2009
Observation of an electrically tunable band gap in trilayer graphene Lui, Chun Hung; Li, Zhiqiang; Mak, Kin Fai Nature Physics, Vol. 7, Issue 12 https://doi.org/10.1038/nphys2102	journal	September 2011
Stacking-dependent band gap and quantum transport in trilayer graphene Bao, W.; Jing, L.; Velasco, J. Nature Physics, Vol. 7, Issue 12 https://doi.org/10.1038/nphys2103	journal	September 2011
Quantum dissipation driven by electron transfer within a single molecule investigated with atomic force microscopy Berger, Jan; Ondráček, Martin; Stetsovych, Oleksandr Nature Communications, Vol. 11, Issue 1 https://doi.org/10.1038/s41467-020-15054-w	journal	March 2020
Manipulation of domain-wall solitons in bi- and trilayer graphene Jiang, Lili; Wang, Sheng; Shi, Zhiwen Nature Nanotechnology, Vol. 13, Issue 3 https://doi.org/10.1038/s41565-017-0042-6	journal	January 2018
Signatures of tunable superconductivity in a trilayer graphene moiré superlattice Chen, Guorui; Sharpe, Aaron L.; Gallagher, Patrick Nature, Vol. 572, Issue 7768 https://doi.org/10.1038/s41586-019-1393-y	journal	July 2019
An Information Theory-Inspired Strategy for Design of Re-programmable Encrypted Graphene-based Coding Metasurfaces at Terahertz Frequencies Momeni, Ali; Rouhi, Kasra; Rajabalipanah, Hamid Scientific Reports, Vol. 8, Issue 1 https://doi.org/10.1038/s41598-018-24553-2	journal	April 2018
Energy level alignment at metal/organic semiconductor interfaces: “Pillow” effect, induced density of interface states, and charge neutrality level Vázquez, H.; Dappe, Y. J.; Ortega, J. The Journal of Chemical Physics, Vol. 126, Issue 14 https://doi.org/10.1063/1.2717165	journal	April 2007
Special points for Brillouin-zone integrations Monkhorst, Hendrik J.; Pack, James D. Physical Review B, Vol. 13, Issue 12, p. 5188-5192 https://doi.org/10.1103/PhysRevB.13.5188	journal	June 1976
Lattice-dynamical model for alkali-metal—graphite intercalation compounds Al-Jishi, R.; Dresselhaus, G. Physical Review B, Vol. 26, Issue 8 https://doi.org/10.1103/PhysRevB.26.4523	journal	October 1982
First-principles study of the interaction and charge transfer between graphene and metals Khomyakov, P. A.; Giovannetti, G.; Rusu, P. C. Physical Review B, Vol. 79, Issue 19 https://doi.org/10.1103/PhysRevB.79.195425	journal	May 2009
Stacking order dependent electric field tuning of the band gap in graphene multilayers Avetisyan, A. A.; Partoens, B.; Peeters, F. M. Physical Review B, Vol. 81, Issue 11 https://doi.org/10.1103/PhysRevB.81.115432	journal	March 2010
Intrinsic magnetic moment on (0001) surfaces of rhombohedral graphite Otani, Minoru; Koshino, Mikito; Takagi, Yoshiteru Physical Review B, Vol. 81, Issue 16 https://doi.org/10.1103/PhysRevB.81.161403	journal	April 2010
Selective formation of ABC-stacked graphene layers on SiC(0001) Norimatsu, Wataru; Kusunoki, Michiko Physical Review B, Vol. 81, Issue 16 https://doi.org/10.1103/PhysRevB.81.161410	journal	April 2010
Band structure of A B C -stacked graphene trilayers Zhang, Fan; Sahu, Bhagawan; Min, Hongki Physical Review B, Vol. 82, Issue 3 https://doi.org/10.1103/PhysRevB.82.035409	journal	July 2010
High-temperature surface superconductivity in topological flat-band systems Kopnin, N. B.; Heikkilä, T. T.; Volovik, G. E. Physical Review B, Vol. 83, Issue 22 https://doi.org/10.1103/PhysRevB.83.220503	journal	June 2011
Stacking-order dependent transport properties of trilayer graphene Jhang, S. H.; Craciun, M. F.; Schmidmeier, S. Physical Review B, Vol. 84, Issue 16 https://doi.org/10.1103/PhysRevB.84.161408	journal	October 2011
Density functional investigation of rhombohedral stacks of graphene: Topological surface states, nonlinear dielectric response, and bulk limit Xiao, Ruijuan; Tasnádi, F.; Koepernik, K. Physical Review B, Vol. 84, Issue 16 https://doi.org/10.1103/PhysRevB.84.165404	journal	October 2011
Growth and electronic structure of nitrogen-doped graphene on Ni(111) Koch, R. J.; Weser, M.; Zhao, W. Physical Review B, Vol. 86, Issue 7 https://doi.org/10.1103/PhysRevB.86.075401	journal	August 2012
Influence of the surface dipole layer and Pauli repulsion on band energies and doping in graphene adsorbed on metal surfaces Gebhardt, Julian; Viñes, Francesc; Görling, Andreas Physical Review B, Vol. 86, Issue 19 https://doi.org/10.1103/PhysRevB.86.195431	journal	November 2012
High-temperature surface superconductivity in rhombohedral graphite Kopnin, N. B.; Ijäs, M.; Harju, A. Physical Review B, Vol. 87, Issue 14 https://doi.org/10.1103/PhysRevB.87.140503	journal	April 2013
Growth and electronic structure of boron-doped graphene Gebhardt, J.; Koch, R. J.; Zhao, W. Physical Review B, Vol. 87, Issue 15 https://doi.org/10.1103/PhysRevB.87.155437	journal	April 2013
Ab initio quasiparticle band structure of ABA and ABC-stacked graphene trilayers Menezes, Marcos G.; Capaz, Rodrigo B.; Louie, Steven G. Physical Review B, Vol. 89, Issue 3 https://doi.org/10.1103/PhysRevB.89.035431	journal	January 2014
Evolution and dimensional crossover from the bulk subbands in ABC-stacked graphene to a three-dimensional Dirac cone structure in rhombohedral graphite Ho, Ching-Hong; Chang, Cheng-Peng; Lin, Ming-Fa Physical Review B, Vol. 93, Issue 7 https://doi.org/10.1103/PhysRevB.93.075437	journal	February 2016
Structure and energetics of interlayer dislocations in bilayer graphene Dai, Shuyang; Xiang, Yang; Srolovitz, David J. Physical Review B, Vol. 93, Issue 8 https://doi.org/10.1103/PhysRevB.93.085410	journal	February 2016
Evidencing the need for high spatial resolution in angle-resolved photoemission experiments Joucken, Frédéric; Reckinger, Nicolas; Lorcy, Stéphane Physical Review B, Vol. 93, Issue 24 https://doi.org/10.1103/PhysRevB.93.241101	journal	June 2016
Elastic equilibrium of curved thin films Srolovitz, D. J.; Safran, S. A.; Tenne, R. Physical Review E, Vol. 49, Issue 6 https://doi.org/10.1103/PhysRevE.49.5260	journal	June 1994
Doping Graphene with Metal Contacts Giovannetti, G.; Khomyakov, P. A.; Brocks, G. Physical Review Letters, Vol. 101, Issue 2 https://doi.org/10.1103/PhysRevLett.101.026803	journal	July 2008
Accurate Molecular Van Der Waals Interactions from Ground-State Electron Density and Free-Atom Reference Data Tkatchenko, Alexandre; Scheffler, Matthias Physical Review Letters, Vol. 102, Issue 7 https://doi.org/10.1103/PhysRevLett.102.073005	journal	February 2009
Sliding Mechanisms in Multilayered Hexagonal Boron Nitride and Graphene: The Effects of Directionality, Thickness, and Sliding Constraints Gao, Wang; Tkatchenko, Alexandre Physical Review Letters, Vol. 114, Issue 9 https://doi.org/10.1103/PhysRevLett.114.096101	journal	March 2015
What Drives Metal-Surface Step Bunching in Graphene Chemical Vapor Deposition? Yi, Ding; Luo, Da; Wang, Zhu-Jun Physical Review Letters, Vol. 120, Issue 24 https://doi.org/10.1103/PhysRevLett.120.246101	journal	June 2018
Generalized Gradient Approximation Made Simple Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868 https://doi.org/10.1103/PhysRevLett.77.3865	journal	October 1996
The electronic properties of graphene Castro Neto, A. H.; Guinea, F.; Peres, N. M. R. Reviews of Modern Physics, Vol. 81, Issue 1, p. 109-162 https://doi.org/10.1103/RevModPhys.81.109	journal	January 2009
2D materials and van der Waals heterostructures Novoselov, K. S.; Mishchenko, A.; Carvalho, A. Science, Vol. 353, Issue 6298 https://doi.org/10.1126/science.aac9439	journal	July 2016
The electronic properties of graphene Neto, A. H. Castro; Guinea, F.; Peres, N. M. R. arXiv https://doi.org/10.48550/arxiv.0709.1163	text	January 2007
Band Structure of ABC-Stacked Graphene Trilayers Zhang, Fan; Sahu, Bhagawan; Min, Hongki arXiv https://doi.org/10.48550/arxiv.1004.1481	text	January 2010
Quantum Hall effect and Landau level crossing of Dirac fermions in trilayer graphene Taychatanapat, Thiti; Watanabe, Kenji; Taniguchi, Takashi arXiv https://doi.org/10.48550/arxiv.1104.0438	text	January 2011
Transport studies of dual-gated ABC and ABA trilayer graphene: band gap opening and band structure tuning in very large perpendicular electric field Zou, K.; Zhang, Fan; Clapp, C. arXiv https://doi.org/10.48550/arxiv.1302.3432	text	January 2013
Ab initio quasiparticle bandstructure of ABA and ABC-stacked graphene trilayers Menezes, Marcos G.; Capaz, Rodrigo B.; Louie, Steven G. arXiv https://doi.org/10.48550/arxiv.1401.1411	text	January 2014
Direct observation of a gate tunable band-gap in electrical transport in ABC-trilayer graphene Khodkov, T.; Khrapach, I.; Craciun, M. F. arXiv https://doi.org/10.48550/arxiv.1506.05160	preprint	January 2015
2D materials and van der Waals heterostructures Novoselov, K. S.; Mishchenko, A.; Carvalho, A. arXiv https://doi.org/10.48550/arxiv.1608.03059	text	January 2016
Reversible Work Transiton State Theory: Application to Dissociative Adsorption of Hydrogen Mills, Gregory; Jonsson, Hannes arXiv https://doi.org/10.48550/arxiv.chem-ph/9411012	text	January 1994
Stacking-order dependent transport properties of trilayer graphene Jhang, Sung Ho; Craciun, M. F.; Schmidmeier, Silvia Universität Regensburg https://doi.org/10.5283/epub.22432	text	January 2011

Similar Records

Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001)

Journal Article · Sun Dec 27 23:00:00 EST 2015 · Applied Physics Letters · OSTI ID:22486313

First-principles studies of electric field effects on the electronic structure of trilayer graphene

Journal Article · Thu Oct 20 20:00:00 EDT 2016 · Physical Review B · OSTI ID:1535784

Related Subjects

36 MATERIALS SCIENCE
Materials science
Condensed matter physics
Nanoscience
Nanotechnology
Structural properties
Synthesis of graphene
Two-dimensional materials
structural properties
synthesis of graphene
two-dimensional materials

Large-area epitaxial growth of curvature-stabilized ABC trilayer graphene

Citation Formats

References (80)

Similar Records

Related Subjects