Strongly Surface State Carrier‐Dependent Spin–Orbit Torque in Magnetic Topological Insulators

Che, Xiaoyu; Pan, Quanjun; Vareskic, Božo; Zou, Jingyi; Pan, Lei; Zhang, Peng; Yin, Gen; Wu, Hao; Shao, Qiming; Deng, Peng; Wang, Kang L.

doi:10.1002/adma.201907661

Strongly Surface State Carrier‐Dependent Spin–Orbit Torque in Magnetic Topological Insulators

Journal Article · Fri Feb 28 00:00:00 EST 2020 · Advanced Materials

DOI:https://doi.org/10.1002/adma.201907661· OSTI ID:1602095

Che, Xiaoyu ^[1]; Pan, Quanjun ^[1]; Vareskic, Božo ^[1]; Zou, Jingyi ^[1]; Pan, Lei ^[1]; Zhang, Peng ^[1]; Yin, Gen ^[1]; Wu, Hao ^[1]; Shao, Qiming ^[2]; Deng, Peng ^[1]; ^[1]

Department of Electrical and Computer Engineering Department of Physics and Astronomy and Department of Materials Science and Engineering University of California Los Angeles CA 90095 USA
Department of Electrical and Computer Engineering Department of Physics and Astronomy and Department of Materials Science and Engineering University of California Los Angeles CA 90095 USA, Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Clear Water Bay Kowloon Hong Kong SAR 999077 China

Abstract

The topological surface states (TSS) in topological insulators (TIs) can exert strong spin–orbit torque (SOT) on adjacent magnetization, offering great potential in implementing energy‐efficient magnetic memory devices. However, there are large discrepancies among the reported spin Hall angle values in TIs, and its temperature dependence still remains elusive. Here, the spin Hall angle in a modulation‐doped Cr‐Bi _x Sb ₂₋ _x Te ₃ (Cr‐BST) film is quantitatively determined via both transport and optic approaches, where consistent results are obtained. A large spin Hall angle of ≈90 in the modulation‐doped Cr‐BST film is demonstrated at 2.5 K, and the spin Hall angle drastically decreases to 0.3–0.5 as the temperature increases. Moreover, by tuning the top TSS carrier concentration, a competition between the top and bottom TSS in contributing to SOT is observed. The above phenomena can account for the large discrepancies among the previously reported spin Hall angle values and reveal the unique role of TSS in generating SOT.

View Accepted Manuscript (Publisher)

Sponsoring Organization:: USDOE

OSTI ID:: 1602095

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Journal Issue: 16 Vol. 32; ISSN 0935-9648

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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