Efficient Energy Funneling in Quasi‐2D Perovskites: From Light Emission to Lasing

Lei, Lei; Seyitliyev, Dovletgeldi; Stuard, Samuel; Mendes, Juliana; Dong, Qi; Fu, Xiangyu; Chen, Yi‐An; He, Siliang; Yi, Xueping; Zhu, Liping; Chang, Chih‐Hao; Ade, Harald; Gundogdu, Kenan; So, Franky

doi:10.1002/adma.201906571

Title: Efficient Energy Funneling in Quasi‐2D Perovskites: From Light Emission to Lasing

Journal Article · Fri Feb 28 00:00:00 EST 2020 · Advanced Materials

DOI:https://doi.org/10.1002/adma.201906571· OSTI ID:1602093

Lei, Lei ^[1]; Seyitliyev, Dovletgeldi ^[2]; Stuard, Samuel ^[2]; Mendes, Juliana ^[1]; Dong, Qi ^[1]; Fu, Xiangyu ^[1]; Chen, Yi‐An ^[3]; He, Siliang ^[1]; Yi, Xueping ^[1]; Zhu, Liping ^[1]; Chang, Chih‐Hao ^[3]; Ade, Harald ^[2]; Gundogdu, Kenan ^[2];

^[1]

Department of Materials Science and Engineering Organic and Carbon Electronics Lab (ORaCEL) North Carolina State University Raleigh NC 27695 USA
Department of Physics Organic and Carbon Electronics Lab (ORaCEL) North Carolina State University Raleigh NC 27695 USA
Department of Mechanical and Aerospace Engineering North Carolina State University Raleigh NC 27695 USA

Abstract Quasi‐2D Ruddlesden–Popper halide perovskites with a large exciton binding energy, self‐assembled quantum wells, and high quantum yield draw attention for optoelectronic device applications. Thin films of these quasi‐2D perovskites consist of a mixture of domains having different dimensionality, allowing energy funneling from lower‐dimensional nanosheets (high‐bandgap domains) to 3D nanocrystals (low‐bandgap domains). High‐quality quasi‐2D perovskite (PEA) ₂ (FA) ₃ Pb ₄ Br ₁₃ films are fabricated by solution engineering. Grazing‐incidence wide‐angle X‐ray scattering measurements are conducted to study the crystal orientation, and transient absorption spectroscopy measurements are conducted to study the charge‐carrier dynamics. These data show that highly oriented 2D crystal films have a faster energy transfer from the high‐bandgap domains to the low‐bandgap domains (<0.5 ps) compared to the randomly oriented films. High‐performance light‐emitting diodes can be realized with these highly oriented 2D films. Finally, amplified spontaneous emission with a low threshold 4.16 µJ cm ⁻² is achieved and distributed feedback lasers are also demonstrated. These results show that it is important to control the morphology of the quasi‐2D films to achieve efficient energy transfer, which is a critical requirement for light‐emitting devices.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: DE‐AC02‐05CH11231

OSTI ID:: 1602093

Journal Information:: Advanced Materials, Journal Name: Advanced Materials Vol. 32 Journal Issue: 16; ISSN 0935-9648

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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Cited by: 94 works

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