Janus monolayers of transition metal dichalcogenides

Lu, Ang-Yu; Zhu, Hanyu; Xiao, Jun; Chuu, Chih-Piao; Han, Yimo; Chiu, Ming-Hui; Cheng, Chia-Chin; Yang, Chih-Wen; Wei, Kung-Hwa; Yang, Yiming; Wang, Yuan; Sokaras, Dimosthenis; Nordlund, Dennis; Yang, Peidong; Muller, David A.; Chou, Mei-Yin; Zhang, Xiang; Li, Lain-Jong

doi:10.1038/nnano.2017.100

Janus monolayers of transition metal dichalcogenides

Journal Article · Mon May 15 04:00:00 EDT 2017 · Nature Nanotechnology

DOI:https://doi.org/10.1038/nnano.2017.100· OSTI ID:1601645

Lu, Ang-Yu ^[1]; Zhu, Hanyu ^[2]; Xiao, Jun ^[2]; Chuu, Chih-Piao ^[3]; Han, Yimo ^[4]; Chiu, Ming-Hui ^[1]; Cheng, Chia-Chin ^[5]; Yang, Chih-Wen ^[1]; Wei, Kung-Hwa ^[6]; Yang, Yiming ^[7]; Wang, Yuan ^[8]; Sokaras, Dimosthenis ^[9]; ^[9]; Yang, Peidong ^[7]; ^[10]; Chou, Mei-Yin ^[3]; Zhang, Xiang ^[8]; ^[1]

King Abdullah Univ. of Science and Technology, Thuwal (Saudi Arabia)
Univ. of California, Berkeley, CA (United States). NSF Nanoscale Science and Engineering Center
Academia Sinica, Taipei (Taiwan). Inst. of Atomic and Molecular Sciences
Univ. of California, Berkeley, CA (United States)
Academia Sinica, Taipei (Taiwan). Research Center for Applied Sciences; National Chiao Tung Univ., Hsinchu (Taiwan)
National Chiao Tung Univ., Hsinchu (Taiwan)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States). NSF Nanoscale Science and Engineering Center; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Cornell Univ., Ithaca, NY (United States). Kavli Inst. at Cornell for Nanoscale Science

Structural symmetry-breaking plays a crucial role in determining the electronic band structures of two-dimensional materials. Tremendous efforts have been devoted to breaking the in-plane symmetry of graphene with electric fields on AB-stacked bilayers or stacked van der Waals heterostructures. In contrast, transition metal dichalcogenide monolayers are semiconductors with intrinsic in-plane asymmetry, leading to direct electronic bandgaps, distinctive optical properties and great potential in optoelectronics. Apart from their in-plane inversion asymmetry, an additional degree of freedom allowing spin manipulation can be induced by breaking the out-of-plane mirror symmetry with external electric fields or, as theoretically proposed, with an asymmetric out-of-plane structural configuration. Here, we report a synthetic strategy to grow Janus monolayers of transition metal dichalcogenides breaking the out-of-plane structural symmetry. In particular, based on a MoS₂ monolayer, we fully replace the top-layer S with Se atoms. We confirm the Janus structure of MoSSe directly by means of scanning transmission electron microscopy and energy-dependent X-ray photoelectron spectroscopy, and prove the existence of vertical dipoles by second harmonic generation and piezoresponse force microscopy measurements.

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; King Abdullah University of Science and Technology (Saudi Arabia); Ministry of Science and Technology (MOST); Taiwan Consortium of Emergent Crystalline Materials (TCECM); Academia Sinica (Taiwan); Asian Office of Aerospace Research & Development (AOARD); National Science Foundation (NSF)

DOE Contract Number:: AC02-05CH11231

OSTI ID:: 1601645

Journal Information:: Nature Nanotechnology, Journal Name: Nature Nanotechnology Journal Issue: 8 Vol. 12; ISSN 1748-3387

Publisher:: Nature Publishing Group

Country of Publication:: United States

Language:: English

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