Hexagonal phase epitaxial cadmium sulfide on copper indium gallium selenide for a photovoltaic junction

Mackie, Neil M.; Zapalac, Jr., Geordie H.; Zhang, Weijie; Corson, John F.; He, Xiaoqing; Rockett, Angus A.; Varley, Joel; Lordi, Vincenzo

Title: Hexagonal phase epitaxial cadmium sulfide on copper indium gallium selenide for a photovoltaic junction

Patent · Tue Oct 15 00:00:00 EDT 2019

OSTI ID:1600169

Mackie, Neil M.; Zapalac, Jr., Geordie H.; Zhang, Weijie; Corson, John F.; He, Xiaoqing; Rockett, Angus A.; Varley, Joel; Lordi, Vincenzo

A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.

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Research Organization:: Beijing Apollo Ding Rong Solar Technology Co., Ltd., Beijing (China); Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States); Univ. of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

DOE Contract Number:: CPS 25853

Assignee:: Beijing Apollo Ding Rong Solar Technology Co., Ltd. (Beijing, CN); Lawrence Livermore National Security, LLC (Livermore, CA); The Board of Trustees of the University of Illinois (Urbana, IL)

Patent Number(s):: 10,446,706

Application Number:: 15/153,478

OSTI ID:: 1600169

Resource Relation:: Patent File Date: 05/12/2016

Country of Publication:: United States

Language:: English

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