Itinerant ferromagnetism and intrinsic anomalous Hall effect in amorphous iron-germanium
- Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
- Fudan Univ., Shanghai (China)
- Univ. of California, Berkeley, CA (United States)
- Univ. of Iowa, Iowa City, IA (United States); Univ. of Chicago, IL (United States); Eindhoven Univ. of Technology (Netherlands)
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States). Materials Engineering Division
- Univ. of California, Irvine, CA (United States). Dept. of Physics and Astronomy
© 2020 American Physical Society. The amorphous iron-germanium system (a-FexGe1-x) lacks long-range structural order and hence lacks a meaningful Brillouin zone. The magnetization of a-FexGe1-x is well explained by the Stoner model for Fe concentrations x above the onset of magnetic order around x=0.4, indicating that the local order of the amorphous structure preserves the spin-split density of states of the Fe-3d states sufficiently to polarize the electronic structure despite k being a bad quantum number. Measurements reveal an enhanced anomalous Hall resistivity ρxyAH relative to crystalline FeGe; this ρxyAH is compared to density-functional theory calculations of the anomalous Hall conductivity to resolve its underlying mechanisms. The intrinsic mechanism, typically understood as the Berry curvature integrated over occupied k states but shown here to be equivalent to the density of curvature integrated over occupied energies in aperiodic materials, dominates the anomalous Hall conductivity of a-FexGe1-x (0.38≤x≤0.61). The density of curvature is the sum of spin-orbit correlations of local orbital states and can hence be calculated with no reference to k space. This result and the accompanying Stoner-like model for the intrinsic anomalous Hall conductivity establish a unified understanding of the underlying physics of the anomalous Hall effect in both crystalline and disordered systems.
- Research Organization:
- Univ. of California, Irvine, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- Grant/Contract Number:
- FG02-05ER46237; AC02-05CH11231
- OSTI ID:
- 1599458
- Alternate ID(s):
- OSTI ID: 1599843
- Journal Information:
- Physical Review. B, Vol. 101, Issue 1; ISSN 2469-9950
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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