High carrier mobility in monolayer CVD-grown MoS2 through phonon suppression

Huo, Nengjie; Yang, Yujue; Wu, Yu-Ning; Zhang, Xiao-Guang; Pantelides, Sokrates T.; Konstantatos, Gerasimos

doi:10.1039/c8nr04416c

Title: High carrier mobility in monolayer CVD-grown MoS₂ through phonon suppression

Journal Article · Tue Jul 24 00:00:00 EDT 2018 · Nanoscale

DOI:https://doi.org/10.1039/c8nr04416c· OSTI ID:1597902

^[1]; Yang, Yujue ^[2]; Wu, Yu-Ning ^[3]; Zhang, Xiao-Guang ^[4]; Pantelides, Sokrates T. ^[5]; Konstantatos, Gerasimos ^[6]

Barcelona Institute of Science and Technology (BIST), Barcelona (Spain)
Barcelona Institute of Science and Technology (BIST), Barcelona (Spain); Guangdong University of Technology, Guangzhou (China)
National Energy Technology Lab. (NETL), Pittsburgh, PA (United States); Univ. of Florida, Gainesville, FL (United States)
Univ. of Florida, Gainesville, FL (United States)
Vanderbilt Univ., Nashville, TN (United States)
Barcelona Institute of Science and Technology (BIST), Barcelona (Spain); ICREA – Institució Catalana de Recerca i Estudis Avançats, Barcelona (Spain)

Mobility engineering is one of the most important challenges that determine the optoelectronic performance of two-dimensional (2D) materials. So far, charged-impurity scattering and electrical-contact barriers have been suppressed through high-κ dielectrics and seamless contact engineering, giving rise to carrier-mobility improvement in exfoliated 2D semiconducting MoS₂. Here we demonstrate a facile and scalable technique to effectively suppress both Coulomb scattering and electron–phonon scattering via the HfO₂ overlayer, resulting in a large mobility improvement in CVD-grown monolayer MoS₂, in excess of 60 cm² V^-1 s^-1. Surface passivation and suppression of Coulomb scattering can partially contribute to the mobility increase. Interestingly, we correlate the mobility increase with phonon quenching through Raman and temperature-dependent mobility measurements. The experimental method is facile, industrially scalable, and renders phonon engineering an additional leverage towards further improvements in 2D semiconductor mobility and device performance.

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Research Organization:: Vanderbilt Univ., Nashville, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC); European Union (EU); National Science Foundation (NSF); Guangdong University of Technology (GDUT); National Natural Science Foundation of China (NSFC)

Grant/Contract Number:: FG02-09ER46554; ECCS-1508898; 11674310

OSTI ID:: 1597902

Journal Information:: Nanoscale, Vol. 10, Issue 31; ISSN 2040-3364

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

References (54)

High-Gain Phototransistors Based on a CVD MoS ₂ Monolayer Zhang, Wenjing; Huang, Jing-Kai; Chen, Chang-Hsiao Advanced Materials, Vol. 25, Issue 25 https://doi.org/10.1002/adma.201301244	journal	May 2013
High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity Kang, Kibum; Xie, Saien; Huang, Lujie Nature, Vol. 520, Issue 7549 https://doi.org/10.1038/nature14417	journal	April 2015
Remote phonon and impurity screening effect of substrate and gate dielectric on electron dynamics in single layer MoS ₂ Zeng, Lang; Xin, Zheng; Chen, Shaowen Applied Physics Letters, Vol. 103, Issue 11 https://doi.org/10.1063/1.4821344	journal	September 2013
Scalable high-mobility MoS ₂ thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature Huang, Chung-Che; Al-Saab, Feras; Wang, Yudong Nanoscale, Vol. 6, Issue 21 https://doi.org/10.1039/C4NR04228J	journal	January 2014
Study of interfacial strain at the α-Al2O3/monolayer MoS2 interface by first principle calculations Yu, Sheng; Ran, Shunjie; Zhu, Hao Applied Surface Science, Vol. 428 https://doi.org/10.1016/j.apsusc.2017.09.203	journal	January 2018
Realization of Room-Temperature Phonon-Limited Carrier Transport in Monolayer MoS ₂ by Dielectric and Carrier Screening Yu, Zhihao; Ong, Zhun-Yong; Pan, Yiming Advanced Materials, Vol. 28, Issue 3 https://doi.org/10.1002/adma.201503033	journal	November 2015
Improved Carrier Mobility in Few-Layer MoS ₂ Field-Effect Transistors with Ionic-Liquid Gating Perera, Meeghage Madusanka; Lin, Ming-Wei; Chuang, Hsun-Jen ACS Nano, Vol. 7, Issue 5 https://doi.org/10.1021/nn401053g	journal	April 2013
Mobility enhancement and highly efficient gating of monolayer MoS ₂ transistors with polymer electrolyte Lin, Ming-Wei; Liu, Lezhang; Lan, Qing Journal of Physics D: Applied Physics, Vol. 45, Issue 34 https://doi.org/10.1088/0022-3727/45/34/345102	journal	August 2012
Deposition of High-Quality ${HfO}_{2}$ on Graphene and the Effect of Remote Oxide Phonon Scattering Zou, K.; Hong, X.; Keefer, D. Physical Review Letters, Vol. 105, Issue 12 https://doi.org/10.1103/PhysRevLett.105.126601	journal	September 2010
Mobility engineering and a metal–insulator transition in monolayer MoS2 Radisavljevic, Branimir; Kis, Andras Nature Materials, Vol. 12, Issue 9 https://doi.org/10.1038/nmat3687	journal	June 2013
Understanding the Electrical Impact of Edge Contacts in Few-Layer Graphene Chu, Tao; Chen, Zhihong ACS Nano, Vol. 8, Issue 4 https://doi.org/10.1021/nn500043y	journal	March 2014
Synthesis of Large-Area MoS₂ Atomic Layers with Chemical Vapor Deposition Lee, Yi-Hsien; Zhang, Xin-Quan; Zhang, Wenjing Advanced Materials, Vol. 24, Issue 17, p. 2320-2325 https://doi.org/10.1002/adma.201104798	journal	March 2012
$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric Liu, Han; Ye, Peide D. IEEE Electron Device Letters, Vol. 33, Issue 4 https://doi.org/10.1109/LED.2012.2184520	journal	April 2012
High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals Kim, Sunkook; Konar, Aniruddha; Hwang, Wan-Sik Nature Communications, Vol. 3, Issue 1 https://doi.org/10.1038/ncomms2018	journal	January 2012
Bandgap Engineering of Strained Monolayer and Bilayer MoS₂ Conley, Hiram J.; Wang, Bin; Ziegler, Jed I. Nano Letters, Vol. 13, Issue 8, p. 3626-3630 https://doi.org/10.1021/nl4014748	journal	July 2013
Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS ₂ Kappera, Rajesh; Voiry, Damien; Yalcin, Sibel Ebru APL Materials, Vol. 2, Issue 9 https://doi.org/10.1063/1.4896077	journal	September 2014
Symmetry-dependent phonon renormalization in monolayer MoS $_{2}$ transistor Chakraborty, Biswanath; Bera, Achintya; Muthu, D. V. S. Physical Review B, Vol. 85, Issue 16 https://doi.org/10.1103/PhysRevB.85.161403	journal	April 2012
Large-Area Epitaxial Monolayer MoS ₂ Dumcenco, Dumitru; Ovchinnikov, Dmitry; Marinov, Kolyo ACS Nano, Vol. 9, Issue 4 https://doi.org/10.1021/acsnano.5b01281	journal	February 2015
Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS ₂ / h -BN Heterostructure Joo, Min-Kyu; Moon, Byoung Hee; Ji, Hyunjin Nano Letters, Vol. 16, Issue 10 https://doi.org/10.1021/acs.nanolett.6b02788	journal	September 2016
Highly Sensitive, Encapsulated MoS ₂ Photodetector with Gate Controllable Gain and Speed Kufer, Dominik; Konstantatos, Gerasimos Nano Letters, Vol. 15, Issue 11 https://doi.org/10.1021/acs.nanolett.5b02559	journal	October 2015
From Bulk to Monolayer MoS2: Evolution of Raman Scattering Li, Hong; Zhang, Qing; Yap, Chin Chong Ray Advanced Functional Materials, Vol. 22, Issue 7 https://doi.org/10.1002/adfm.201102111	journal	January 2012
Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide van der Zande, Arend M.; Huang, Pinshane Y.; Chenet, Daniel A. Nature Materials, Vol. 12, Issue 6, p. 554-561 https://doi.org/10.1038/nmat3633	journal	May 2013
Enhancement of Carrier Mobility in Semiconductor Nanostructures by Dielectric Engineering Jena, Debdeep; Konar, Aniruddha Physical Review Letters, Vol. 98, Issue 13 https://doi.org/10.1103/PhysRevLett.98.136805	journal	March 2007
Oxygen-Assisted Chemical Vapor Deposition Growth of Large Single-Crystal and High-Quality Monolayer MoS ₂ Chen, Wei; Zhao, Jing; Zhang, Jing Journal of the American Chemical Society, Vol. 137, Issue 50 https://doi.org/10.1021/jacs.5b10519	journal	December 2015
Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films Britnell, L.; Ribeiro, R. M.; Eckmann, A. Science, Vol. 340, Issue 6138 https://doi.org/10.1126/science.1235547	journal	May 2013
Electrical performance of monolayer MoS ₂ field-effect transistors prepared by chemical vapor deposition Amani, Matin; Chin, Matthew L.; Birdwell, A. Glen Applied Physics Letters, Vol. 102, Issue 19 https://doi.org/10.1063/1.4804546	journal	May 2013
Effect of doping and strain modulations on electron transport in monolayer ${MoS}_{2}$ Ge, Yanfeng; Wan, Wenhui; Feng, Wanxiang Physical Review B, Vol. 90, Issue 3 https://doi.org/10.1103/PhysRevB.90.035414	journal	July 2014
Low-temperature photoluminescence of oxide-covered single-layer MoS ₂: Low-temperature photoluminescence of oxide-covered single-layer MoS ₂ Plechinger, G.; Schrettenbrunner, F. -X.; Eroms, J. physica status solidi (RRL) - Rapid Research Letters, Vol. 6, Issue 3 https://doi.org/10.1002/pssr.201105589	journal	January 2012
Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides Mak, Kin Fai; Shan, Jie Nature Photonics, Vol. 10, Issue 4 https://doi.org/10.1038/nphoton.2015.282	journal	March 2016
Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization Lin, Yu-Chuan; Zhang, Wenjing; Huang, Jing-Kai Nanoscale, Vol. 4, Issue 20 https://doi.org/10.1039/c2nr31833d	journal	January 2012
Electrical contacts to two-dimensional semiconductors Allain, Adrien; Kang, Jiahao; Banerjee, Kaustav Nature Materials, Vol. 14, Issue 12 https://doi.org/10.1038/nmat4452	journal	November 2015
Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2 Lin, Yung-Chang; Dumcenco, Dumitru O.; Huang, Ying-Sheng Nature Nanotechnology, Vol. 9, Issue 5 https://doi.org/10.1038/nnano.2014.64	journal	April 2014
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform Cui, Xu; Lee, Gwan-Hyoung; Kim, Young Duck Nature Nanotechnology, Vol. 10, Issue 6 https://doi.org/10.1038/nnano.2015.70	journal	April 2015
Conduction Mechanisms in CVD-Grown Monolayer MoS ₂ Transistors: From Variable-Range Hopping to Velocity Saturation He, G.; Ghosh, K.; Singisetti, U. Nano Letters, Vol. 15, Issue 8 https://doi.org/10.1021/acs.nanolett.5b01159	journal	July 2015
Phonon-limited mobility in $n$ -type single-layer MoS $_{2}$ from first principles Kaasbjerg, Kristen; Thygesen, Kristian S.; Jacobsen, Karsten W. Physical Review B, Vol. 85, Issue 11 https://doi.org/10.1103/PhysRevB.85.115317	journal	March 2012
One-Dimensional Electrical Contact to a Two-Dimensional Material Wang, L.; Meric, I.; Huang, P. Y. Science, Vol. 342, Issue 6158 https://doi.org/10.1126/science.1244358	journal	October 2013
Transport Properties of Monolayer MoS ₂ Grown by Chemical Vapor Deposition Schmidt, Hennrik; Wang, Shunfeng; Chu, Leiqiang Nano Letters, Vol. 14, Issue 4 https://doi.org/10.1021/nl4046922	journal	March 2014
Nitride Dielectric Environments to Suppress Surface Optical Phonon Dominated Scattering in High-Performance Multilayer MoS ₂ FETs Bhattacharjee, Shubhadeep; Ganapathi, Kolla Lakshmi; Chandrasekar, Hareesh Advanced Electronic Materials, Vol. 3, Issue 1 https://doi.org/10.1002/aelm.201600358	journal	December 2016
Ultrasensitive photodetectors based on monolayer MoS2 Lopez-Sanchez, Oriol; Lembke, Dominik; Kayci, Metin Nature Nanotechnology, Vol. 8, Issue 7 https://doi.org/10.1038/nnano.2013.100	journal	June 2013
Mechanisms of Photoconductivity in Atomically Thin MoS ₂ Furchi, Marco M.; Polyushkin, Dmitry K.; Pospischil, Andreas Nano Letters, Vol. 14, Issue 11 https://doi.org/10.1021/nl502339q	journal	October 2014
Phase-engineered low-resistance contacts for ultrathin MoS₂ transistors Kappera, Rajesh; Voiry, Damien; Yalcin, Sibel Ebru Nature Materials, Vol. 13, Issue 12, p. 1128-1134 https://doi.org/10.1038/nmat4080	journal	August 2014
Strain-engineered growth of two-dimensional materials Ahn, Geun Ho; Amani, Matin; Rasool, Haider Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/s41467-017-00516-5	journal	September 2017
Single-layer MoS₂ transistors Radisavljevic, B.; Radenovic, A.; Brivio, J. Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150 https://doi.org/10.1038/nnano.2010.279	journal	January 2011
Intimate contacts Jena, Debdeep; Banerjee, Kaustav; Xing, Grace Huili Nature Materials, Vol. 13, Issue 12 https://doi.org/10.1038/nmat4121	journal	November 2014
Materialization of strained CVD-graphene using thermal mismatch Lee, Seung-Mo; Kim, Sang-Min; Na, Min Young Nano Research, Vol. 8, Issue 6 https://doi.org/10.1007/s12274-015-0719-9	journal	April 2015
Integrated Circuits and Logic Operations Based on Single-Layer MoS ₂ Radisavljevic, Branimir; Whitwick, Michael Brian; Kis, Andras ACS Nano, Vol. 5, Issue 12 https://doi.org/10.1021/nn203715c	journal	November 2011
Top-gated chemical vapor deposited MoS ₂ field-effect transistors on Si ₃ N ₄ substrates Sanne, A.; Ghosh, R.; Rai, A. Applied Physics Letters, Vol. 106, Issue 6 https://doi.org/10.1063/1.4907885	journal	February 2015
Nature of Electronic States in Atomically Thin MoS₂ Field-Effect Transistors Ghatak, Subhamoy; Pal, Atindra Nath; Ghosh, Arindam ACS Nano, Vol. 5, Issue 10, p. 7707-7712 https://doi.org/10.1021/nn202852j	journal	October 2011
Enhancement of Carrier Mobility in Semiconductor Nanostructures by Dielectric Engineering Jena, Debdeep; Konar, Aniruddha arXiv https://doi.org/10.48550/arxiv.0707.2244	text	January 2007
The Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering Zou, Ke; Hong, Xia; Keefer, Derek arXiv https://doi.org/10.48550/arxiv.0912.1378	text	January 2009
The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors Ghatak, Subhamoy; Pal, Atindra Nath; Ghosh, Arindam arXiv https://doi.org/10.48550/arxiv.1203.5656	text	January 2012
Mobility engineering and metal-insulator transition in monolayer MoS2 Radisavljevic, Branimir; Kis, Andras arXiv https://doi.org/10.48550/arxiv.1301.4947	text	January 2013
Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating Perera, Meeghage Madusanka; Lin, Ming-Wei; Chuang, Hsun-Jen arXiv https://doi.org/10.48550/arxiv.1304.4669	preprint	January 2013
Transport properties of monolayer MoS$_2$ grown by chemical vapour deposition Schmidt, Hennrik; Wang, Shunfeng; Chu, Leiqiang arXiv https://doi.org/10.48550/arxiv.1401.1063	text	January 2014

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Gas dependent hysteresis in MoS ₂ field effect transistors Urban, Francesca; Giubileo, Filippo; Grillo, Alessandro 2D Materials, Vol. 6, Issue 4 https://doi.org/10.1088/2053-1583/ab4020	journal	September 2019
Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition‐Grown Monolayer MoS ₂ by Conductive Atomic Force Microscopy Giannazzo, Filippo; Bosi, Matteo; Fabbri, Filippo physica status solidi (RRL) – Rapid Research Letters, Vol. 14, Issue 2 https://doi.org/10.1002/pssr.201900393	journal	September 2019

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