Two-dimensional PdSe2-Pd2Se3 junctions can serve as nanowires

Zuluaga, Sebastian; Lin, Junhao; Suenaga, Kazu; Pantelides, Sokrates T.

doi:10.1088/2053-1583/aac34c

Title: Two-dimensional PdSe₂-Pd₂Se₃ junctions can serve as nanowires

Journal Article · Fri Jun 01 00:00:00 EDT 2018 · 2D Materials

DOI:https://doi.org/10.1088/2053-1583/aac34c· OSTI ID:1597894

^[1]; Lin, Junhao ^[2]; Suenaga, Kazu ^[3]; Pantelides, Sokrates T. ^[1]

Vanderbilt Univ., Nashville, TN (United States)
National Institute of Advanced Industrial Science and Technology (AIST), Fukushima (Japan); Southern University of Science and Technology, Shenzhen (China)
National Institute of Advanced Industrial Science and Technology (AIST), Fukushima (Japan); Univ. of Tokyo (Japan)

While the exfoliation of almost all layered materials results in a monolayer with the same atomic geometry as its bulk counterpart, the exfoliation of PdSe₂ results in a monolayer with a different atomic geometry and a new stoichiometry, Pd₂Se₃, which is a fusion of two PdSe₂ monolayers mediated by Se emission. Here we first report first-principles calculations of lateral junctions between a PdSe₂ bilayer and a Pd₂Se₃ monolayer. In this work, we find that, while several distinct junction geometries are possible, they all exhibit empty interface states below the conduction band. As a result, light n-type doping of either or both sides, e.g. by halogen atoms replacing Se atoms, leads to a remotely-doped interface, i.e. a 1D conducting nanowire that runs along the junction, in between the two semiconductors. We have fabricated such junctions inside a scanning transmission electron microscope (STEM), but doping and transport measurements are not currently practical.

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Research Organization:: Vanderbilt Univ., Nashville, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC); Japan Science and Technology Agency (JST); Japan Society for the Promotion of Science (JSPS)

Grant/Contract Number:: FG02-09ER46554; JP16H06333; P16823

OSTI ID:: 1597894

Journal Information:: 2D Materials, Vol. 5, Issue 3; ISSN 2053-1583

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 16 works

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