Direct Four-Probe Measurement of Grain-Boundary Resistivity and Mobility in Millimeter-Sized Graphene

Ma, Ruisong; Huan, Qing; Wu, Liangmei; Yan, Jiahao; Guo, Wei; Zhang, Yu-Yang; Wang, Shuai; Bao, Lihong; Liu, Yunqi; Du, Shixuan; Pantelides, Sokrates T.; Gao, Hong-Jun

doi:10.1021/acs.nanolett.7b01624

Direct Four-Probe Measurement of Grain-Boundary Resistivity and Mobility in Millimeter-Sized Graphene

Journal Article · Tue Aug 08 00:00:00 EDT 2017 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.7b01624· OSTI ID:1597842

Ma, Ruisong ^[1]; Huan, Qing ^[2]; Wu, Liangmei ^[3]; Yan, Jiahao ^[3]; Guo, Wei ^[4]; ^[2]; ^[4]; ^[3]; Liu, Yunqi ^[5]; ^[3]; Pantelides, Sokrates T. ^[6]; ^[3]

University of Chinese Academy of Sciences, Beijing (China); Beijing Key Laboratory for Nanomaterials and Nanodevices (China); Vanderbilt University
University of Chinese Academy of Sciences, Beijing (China)
University of Chinese Academy of Sciences, Beijing (China); Beijing Key Laboratory for Nanomaterials and Nanodevices (China)
Huazhong Univ. of Science and Technology, Wuhan (China)
Chinese Academy of Sciences (CAS), Beijing (China)
Vanderbilt Univ., Nashville, TN (United States); University of Chinese Academy of Sciences, Beijing (China)

Grain boundaries (GBs) in polycrystalline graphene scatter charge carriers, which reduces carrier mobility and limits graphene applications in high-speed electronics. Here we report the extraction of the resistivity of GBs and the effect of GBs on carrier mobility by direct four-probe measurements on millimeter-sized graphene bicrystals grown by chemical vapor deposition (CVD). To extract the GB resistivity and carrier mobility from direct four-probe intragrain and intergrain measurements, an electronically equivalent extended 2D GB region is defined based on Ohm’s law. Measurements on seven representative GBs find that the maximum resistivities are in the range of several kΩ·μm to more than 100 kΩ·μm. Furthermore, the mobility in these defective regions is reduced to 0.4–5.9‰ of the mobility of single-crystal, pristine graphene. Similarly, the effect of wrinkles on carrier transport can also be derived. We report the present approach provides a reliable way to directly probe charge-carrier scattering at GBs and can be further applied to evaluate the GB effect of other two-dimensional polycrystalline materials, such as transition-metal dichalcogenides (TMDCs).

View Accepted Manuscript (DOE)

Research Organization:: Vanderbilt Univ., Nashville, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC); National Key R&D Program of China; National Natural Science Foundation of China (NSFC); Chinese Academy of Sciences (CAS); McMinn Endowment; National Science Foundation (NSF)

Grant/Contract Number:: FG02-09ER46554

OSTI ID:: 1597842

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 9 Vol. 17; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Direct Four-Probe Measurement of Grain-Boundary Resistivity and Mobility in Millimeter-Sized Graphene

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