Beating the thermodynamic limit with photo-activation of n-doping in organic semiconductors

Lin, Xin; Wegner, Berthold; Lee, Kyung Min; Fusella, Michael A.; Zhang, Fengyu; Moudgil, Karttikay; Rand, Barry P.; Barlow, Stephen; Marder, Seth R.; Koch, Norbert; Kahn, Antoine

doi:10.1038/nmat5027

Beating the thermodynamic limit with photo-activation of n-doping in organic semiconductors

Journal Article · Mon Nov 13 00:00:00 EST 2017 · Nature Materials

DOI:https://doi.org/10.1038/nmat5027· OSTI ID:1595457

^[1]; ^[2]; ^[3]; ^[3]; ^[3]; Moudgil, Karttikay ^[4]; Rand, Barry P. ^[3]; ^[4]; Marder, Seth R. ^[4]; Koch, Norbert ^[2]; ^[3]

Princeton Univ., NJ (United States); Princeton University
Helmholtz-Zentrum Berlin (HZB), (Germany). German Research Centre for Materials and Energy; Humboldt Univ. of Berlin (Germany)
Princeton Univ., NJ (United States)
Georgia Inst. of Technology, Atlanta, GA (United States)

Chemical doping of organic semiconductors using molecular dopants plays a key role in the fabrication of efficient organic electronic devices. While a variety of stable molecular p-dopants have been developed and successfully deployed in devices in the past decade, air-stable molecular n-dopants suitable for materials with low electron affinity are still elusive. In this work we demonstrate that photo-activation of a cleavable air-stable dimeric dopant can result in kinetically stable and efficient n-doping of host semiconductors, whose reduction potentials are beyond the thermodynamic reach of the dimer’s effective reducing strength. Electron-transport layers doped in this manner are used to fabricate high-efficiency organic light-emitting diodes. This strategy thus enables a new paradigm for using air-stable molecular dopants to improve conductivity in, and provide ohmic contacts to, organic semiconductors with very low electron affinity.

View Accepted Manuscript (DOE)

Research Organization:: Princeton Univ., NJ (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Building Technologies Office (EE-5B); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: EE0006672; SC0012458

OSTI ID:: 1595457

Alternate ID(s):: OSTI ID: 1539786

Journal Information:: Nature Materials, Journal Name: Nature Materials Journal Issue: 12 Vol. 16; ISSN 1476-1122

Publisher:: Springer Nature - Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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