Void growth by dislocation adsorption

Sills, Ryan B.; Boyce, B. L.

doi:10.1080/21663831.2019.1702114

Title: Void growth by dislocation adsorption

Journal Article · Thu Dec 19 00:00:00 EST 2019 · Materials Research Letters

DOI:https://doi.org/10.1080/21663831.2019.1702114· OSTI ID:1595028

Sills, Ryan B. ^[1]; Boyce, B. L. ^[2]

Sandia National Lab. (SNL-CA), Livermore, CA (United States); Rutgers Univ., Piscataway, NJ (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Here, we propose a dislocation adsorption-based mechanism for void growth in metals, wherein a void grows as dislocations from the bulk annihilate at its surface. The basic process is governed by glide and cross-slip of dislocations at the surface of a void. Using molecular dynamics simulations we show that when dislocations are present around a void, growth occurs more quickly and at much lower stresses than when the crystal is initially dislocation-free. Finally, we show that adsorption-mediated growth predicts an exponential dependence on the hydrostatic stress, consistent with the well-known Rice-Tracey equation.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1595028

Report Number(s):: SAND-2019-14959J; 682315

Journal Information:: Materials Research Letters, Vol. 8, Issue 3; ISSN 2166-3831

Publisher:: Taylor and FrancisCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 26 works

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Void growth by dislocation adsorption Sills, R. B.; Boyce, B. L. https://doi.org/10.6084/m9.figshare.11414487.v1 The current record is a supplement to this text	text	January 2019
Void growth by dislocation adsorption Sills, R. B.; Boyce, B. L. https://doi.org/10.6084/m9.figshare.11414487.v1 The current record is supplemented by this text	text	January 2019

Title: Void growth by dislocation adsorption

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