$N$-Type Surface Doping of MAPbI3 via Charge Transfer from Small Molecules

Perry, Erin E.; Labram, John G.; Venkatesan, Naveen R.; Nakayama, Hidenori; Chabinyc, Michael L.

doi:10.1002/aelm.201800087

$$N$$-Type Surface Doping of MAPbI₃ via Charge Transfer from Small Molecules

Journal Article · Sun Jun 10 00:00:00 EDT 2018 · Advanced Electronic Materials

DOI:https://doi.org/10.1002/aelm.201800087· OSTI ID:1594804

Perry, Erin E. ^[1]; ^[2]; Venkatesan, Naveen R. ^[2]; Nakayama, Hidenori ^[3]; ^[2]

Univ. of California, Santa Barbara, CA (United States). Dept. of Materials; University of California, Santa Barbara
Univ. of California, Santa Barbara, CA (United States). Dept. of Materials
Mitsubishi Chemical Corporation (Japan). Yokohama R&D Center; Univ. of California, Santa Barbara, CA (United States). Dept. of Materials and Mitsubishi Chemical Center for Advanced Materials

Organic hole and electron transport materials are regularly employed as electron- and hole-blocking layers in perovskite thin-film solar cells. In order to optimize charge-extraction in the device, these organic layers can be doped using organic small molecules. However, to date there has been little work carried out on direct doping of perovskite surfaces. In this report, we study the change in electrical properties of thin films of MAPbI₃ by surface doping the film with an organic dopant molecule: cobaltocene (Co(C₅H₅)₂). By varying the quantity of cobaltocene deposited, the conductivity of MAPbI3 thin films are observed to be tunable over several orders of magnitude. We observe a tunable shift in the Fermi level illustrating that charge transfer doping enables control over the interfacial energy levels. An increase in photoconductivity is seen at intermediate doping levels, indicating passivation of surface traps confirmed by increased photolumeniscence. In conclusion, this model system provides a means to understand more complex heterointerfaces of doped organic blends at perovskite surfaces.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: SC0012541

OSTI ID:: 1594804

Journal Information:: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 7 Vol. 4; ISSN 2199-160X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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$$N$$-Type Surface Doping of MAPbI3 via Charge Transfer from Small Molecules

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References (46)

Cited By (3)

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$$N$$-Type Surface Doping of MAPbI₃ via Charge Transfer from Small Molecules