Giant tunable Rashba spin splitting in a two-dimensional BiSb monolayer and in BiSb/AlN heterostructures

Singh, Sobhit; Romero, Aldo H.

doi:10.1103/PhysRevB.95.165444

Title: Giant tunable Rashba spin splitting in a two-dimensional BiSb monolayer and in BiSb/AlN heterostructures

Journal Article · Tue Apr 25 00:00:00 EDT 2017 · Physical Review B

DOI:https://doi.org/10.1103/PhysRevB.95.165444· OSTI ID:1593756

Singh, Sobhit ^[1]; Romero, Aldo H. ^[1]

West Virginia Univ., Morgantown, WV (United States)

The search for novel two-dimensional giant Rashba semiconductors is a crucial step in the development of the forth coming nanospintronic technology. Using first-principles calculations, we study a stable two-dimension alcrystal phase of BiSb having buckled honeycomb lattice geometry, which is yet unexplored. The phonon, room temperature molecular dynamics, and elastic constant calculations verify the dynamical and mechanical stability of the monolayer at 0 K and at room temperature. The calculated electronic band structure reveals the direct bandgap semiconducting nature of a BiSb monolayer with the presence of a highly mobile two-dimensional electron gas(2DEG) near the Fermi level. Inclusion of spin-orbit coupling yields the giant Rashba spin-splitting of a 2DEG near the Fermi level. The calculated Rashba energy and Rashba splitting constant are 13 meV and 2.3 eVÅ, respectively,which are amongst the largest yet known Rashba spin splitting parameters in 2D materials. In our work, we demonstrate that the strength of the Rashba spin splitting can be significantly tuned by applying in-plane biaxial strain on the BiSb monolayer. The presence of the giant Rashba spin splitting together with the large electronic band gap(1.6 eV) makes this system of peculiar interest for optoelectronics applications. Furthermore, we study the electronic properties of BiSb/AlN heterostructures having a lattice mismatch of 1.3% at the interface. Our results suggest that a BiSb monolayer and BiSb/AlN heterostructure systems could be potentially used to develop highly efficient spin field-effect transistors, optoelectronics, and nanospintronic devices. Thus, this comprehensive studyof two-dimensional BiSb systems can expand the range of possible applications in future spintronic technology.

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Research Organization:: West Virginia Univ., Morgantown, WV (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: SC0016176; OCI-1053575; DMREF-NSF-1434897

OSTI ID:: 1593756

Alternate ID(s):: OSTI ID: 1353133

Journal Information:: Physical Review B, Vol. 95, Issue 16; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 114 works

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Entanglement entropy and entanglement spectrum of Bi$_{1-x}$Sb$_{x}$ (111) bilayers Brzezińska, M.; Bieniek, M.; Woźniak, T. arXiv https://doi.org/10.48550/arxiv.1709.03935	text	January 2017
Superfluid-insulator transition and the BEC-BCS crossover in the Rashba moat band Allami, Hassan; Starykh, O. A.; Pesin, D. A. arXiv https://doi.org/10.48550/arxiv.1812.06998	text	January 2018
Bound electron pairs formed by the spin-orbit interaction in 2D gated structures Gindikin, Yasha; Vigdorchik, Vitalina; Sablikov, Vladimir A. arXiv https://doi.org/10.48550/arxiv.1904.09510	text	January 2019

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