Lattice relaxations around individual dopant atoms in SrTiO3

Salmani-Rezaie, Salva; Kim, Honggyu; Ahadi, Kaveh; Stemmer, Susanne

doi:10.1103/PhysRevMaterials.3.114404

Lattice relaxations around individual dopant atoms in $SrTi O_{3}$

Journal Article · Fri Nov 01 00:00:00 EDT 2019 · Physical Review Materials

DOI:https://doi.org/10.1103/PhysRevMaterials.3.114404· OSTI ID:1593373

Salmani-Rezaie, Salva ^[1]; Kim, Honggyu; Ahadi, Kaveh; Stemmer, Susanne

University of California, Santa Barbara

The local atomic structure around individual dopant atoms can directly influence the electronic properties of a doped material. Here, we use quantitative scanning transmission electron microscopy to study the local lattice relaxations around Sm dopant atoms in SrTiO₃ thin films. These films have recently been shown to undergo successive ferroelectric and superconducting transitions when strained. We show that neighboring Ti-O columns move away from the columns that contain Sm dopants. The observed displacements are, however, more complex than a simple outward expansion of all four surrounding Ti-O columns. We discuss potential implications, especially for the ferroelectric transition observed in strained films.

View Accepted Manuscript (DOE)

Research Organization:: Susanne Stemmer (University of California, Santa Barbara); Univ. of California, Santa Barbara, CA (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

Grant/Contract Number:: FG02-02ER45994

OSTI ID:: 1593373

Alternate ID(s):: OSTI ID: 1594782

Journal Information:: Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 11 Vol. 3; ISSN PRMHAR; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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