Nucleation and Growth of Metamorphic Epitaxial Aluminum on Silicon (111) 7 x 7 and v3 x v3 surfaces

Alexander, Ashish; McSkimming, Brian M.; Arey, Bruce W.; Arslan, Ilke; Richardson, Christopher J.

doi:10.1557/jmr.2017.322

Title: Nucleation and Growth of Metamorphic Epitaxial Aluminum on Silicon (111) 7 x 7 and v3 x v3 surfaces

Journal Article · Tue Nov 14 00:00:00 EST 2017 · Journal of Materials Research

DOI:https://doi.org/10.1557/jmr.2017.322· OSTI ID:1592708

Alexander, Ashish ^[1]; McSkimming, Brian M. ^[1]; Arey, Bruce W. ^[2]; Arslan, Ilke ^[2]; Richardson, Christopher J. ^[1]

University of Maryland at College Park
BATTELLE (PACIFIC NW LAB)

The nucleation and growth of Al on 7×7 and v3×v3 R30 Al reconstructed Si (111) that result in strain-free Al overgrown films are grown with an atomically abrupt metamorphic interface are compared. The reconstructed surfaces and abrupt strain relaxation are verified using reflection high energy electron diffraction. The topography evolution is studied with atomic force microscopy. The growth of Al on both the surfaces exhibit 3D island growth, but the island evolution of growth is dramatically different. On the 7×7 surface, mounds form uniformly distributed across the substrate, and growth appears to proceed uniformly. Alternatively, on the v3×v3 R30 surface, Al atoms exhibit a clear preference to form mounds near the step edges. During Al growth, mounds increase in size and number, expanding out from step edges until they cover the whole substrate.

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Research Organization:: Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC05-76RL01830

OSTI ID:: 1592708

Report Number(s):: PNNL-SA-128876

Journal Information:: Journal of Materials Research, Vol. 32, Issue 21

Country of Publication:: United States

Language:: English

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