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Title: Infrared Interlayer Exciton Emission in MoS 2 / WSe 2 Heterostructures

Journal Article · · Physical Review Letters
 [1];  [2];  [1];  [3];  [4];  [5];  [6];  [6];  [3];  [7]; ORCiD logo [4];  [4]
  1. Stanford Univ., CA (United States). Dept. of Applied Physics
  2. Stanford Univ., CA (United States). Dept. of Electrical Engineering
  3. Friedrich-Alexander-Universität Erlangen-Nürnberg (Germany). Dept. Physik
  4. Stanford Univ., CA (United States). Dept. of Applied Physics; SLAC National Accelerator Lab., Menlo Park, CA (United States)
  5. Columbia Univ., New York, NY (United States). Dept. of Mechanical Engineering
  6. National Inst. for Materials Science (NIMS), Tsukuba (Japan)
  7. Columbia Univ., New York, NY (United States). Dept. of Applied Physics and Applied Mathematics

Here, we report light emission around 1 eV (1240 nm) from heterostructures of MoS2 and WSe2 transition metal dichalcogenide monolayers. We identify its origin in an interlayer exciton (ILX) by its wide spectral tunability under an out-of-plane electric field. From the static dipole moment of the state, its temperature and twist-angle dependence, and comparison with electronic structure calculations, we assign this ILX to the fundamental interlayer transition between the K valleys in this system. Our results gain access to the interlayer physics of the intrinsically incommensurate MoS2/WSe2 heterostructure, including moiré and valley pseudospin effects, and its integration with silicon photonics and optical fiber communication systems operating at wavelengths longer than 1150 nm.

Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Chemical Sciences, Geosciences, and Biosciences Division; National Science Foundation (NSF)
Grant/Contract Number:
AC02-76-SF00515; GBMF4545; DMR-1708457; ECCS-1542152; JPMJCR15F3; PGSD3-502559-2017
OSTI ID:
1583131
Journal Information:
Physical Review Letters, Vol. 123, Issue 24; ISSN 0031-9007
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 89 works
Citation information provided by
Web of Science

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Determination of band offsets, hybridization, and exciton binding in 2D semiconductor heterostructures journal February 2017
Momentum-space indirect interlayer excitons in transition-metal dichalcogenide van der Waals heterostructures text January 2018
Cavity-control of interlayer excitons in van der Waals heterostructures text January 2019
Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping preprint January 2013
Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2 heterojunction p-n diodes text January 2014
Unfolding spinor wavefunctions and expectation values of general operators: Introducing the unfolding-density operator text January 2014
Anomalous light cones and valley optical selection rules of interlayer excitons in twisted heterobilayers text January 2015
Exciton Radiative Lifetime in Transition Metal Dichalcogenide Monolayers text January 2016
Valley Polarization by Spin Injection in a Light-Emitting van der Waals Heterojunction text January 2016
Directional Interlayer Spin-Valley Transfer in Two-Dimensional Heterostructures text January 2016
Interlayer excitons and Band Alignment in MoS$_2$/hBN/WSe$_2$ van der Waals Heterostructures text January 2016
Comparison of device structures for the dielectric breakdown measurement of hexagonal boron nitride text January 2016
Interlayer exciton dynamics in a dichalcogenide monolayer heterostructure text January 2017
Localized interlayer complexes in heterobilayer transition metal dichalcogenides text January 2018
Momentum-space indirect interlayer excitons in transition metal dichalcogenide van der Waals heterostructures text January 2018
Room temperature nanocavity laser with interlayer excitons in 2D heterostructures preprint January 2019

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