The hunt for the third acceptor in CuInSe2 and Cu(In,Ga)Se2 absorber layers

Babbe, Finn; Elanzeery, Hossam; Wolter, Max H.; Santhosh, Korra; Siebentritt, Susanne

doi:10.1088/1361-648x/ab2e24

Title: The hunt for the third acceptor in CuInSe₂ and Cu(In,Ga)Se₂ absorber layers

Journal Article · Fri Jul 26 00:00:00 EDT 2019 · Journal of Physics. Condensed Matter

DOI:https://doi.org/10.1088/1361-648x/ab2e24· OSTI ID:1582339

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^[2]; Santhosh, Korra ^[2];

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Univ. of Luxembourg, Esch-sur-Alzette, (Luxembourg); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Univ. of Luxembourg, Esch-sur-Alzette, (Luxembourg)

We show the model for intrinsic defects in Cu(In,Ga)Se₂ semiconductor layers is still under debate for the full range between CuInSe₂ and CuGaSe₂. It is commonly agreed by theory and experiment, that there are at least one shallow donor and two shallow acceptors. Spatially resolved photoluminescence on CuGaSe₂ previously revealed a third acceptor. In this study we show with the same method that the photoluminescence peak at 0.94 eV in CuInSe₂, previously attributed to a third acceptor, is a phonon replica. However another pronounced peak at 0.9 eV is detected on polycrystalline CuInSe₂ samples grown with high copper and selenium excess. Intensity and temperature dependent photoluminescence measurements reveal that this peak originates from a DA-transition from a shallow donor (<8 meV) into a shallow acceptor A3 (135 [Formula: see text] 10) meV. The DA3 transition has three distinct phonon replicas with 28 meV spectral spacing and a Huang Rhys factor of 0.75. Complementary admittance measurements are dominated by one main step with an activation energy of 125 meV which corresponds well with the found A3 defect. The same defect is also observed in Cu(In,Ga)Se₂ samples with low gallium content. For [Ga]/([Ga] + [In])-ratios of up to 0.15 both methods show a concordant increase of the activation energy with increasing gallium content shifting the defect deeper into the bandgap. The indium vacancy ν_In is discussed as a possible origin of the third acceptor level in CuInSe₂ and ν_III in Cu(In,Ga)Se₂.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1582339

Journal Information:: Journal of Physics. Condensed Matter, Vol. 31, Issue 42; ISSN 0953-8984

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 13 works

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Title: The hunt for the third acceptor in CuInSe2 and Cu(In,Ga)Se2 absorber layers

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Title: The hunt for the third acceptor in CuInSe₂ and Cu(In,Ga)Se₂ absorber layers